Low noise silicon bipolar RF transistor

Product description • NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and combines ease-of-use to stable volumes production, at benchm

高线性度RF 管基

NPN 硅平面外延晶体管，采用 4 引脚双发射极 SOT343 封装，适用于低噪声和低失真宽带放大器。该射频晶体管受益于英飞凌在射频元件领域的长期经验，结合了易用性和稳定的批量生产，具有基准质量和可靠性。 • 适用于高压应用，VCE < 12 V\n• 转换频率 fT = 7.5 GHz\n• 易于使用，无铅（符合 RoHS 标准）和无卤素行业\n• 带可见引线的标准 SOT343 封装;

封装/外壳：SC-82A，SOT-343 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 12V 7.5GHZ SOT343-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=47kΩ, R2=22kΩ)

GaAs MMIC (Broadband Power Amplifier [ 800..3500 Mhz ] DECT,PHS,PCS,GSM,AMPS,WLAN,WLL Single Voltage Supply)

GaAs MMIC ● Broadband Power Amplifier [ 800..3500 Mhz ] ● DECT,PHS,PCS,GSM,AMPS,WLAN,WLL ● Single Voltage Supply ● Operating voltage range: 2.0to 6 V ● Pout = 25.5dBm at Vd=2.4V ● Pout = 27.0dBm at Vd=3.0V ● Pout = 30.0dBm at Vd=5.0V ● Overall power added efficiency up to 50 ● Easy exter

Silicon Complementary Transistors Audio Power Output and Medium Power Switching

Description: The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type pack age designed for use in general purpose amplifier and switching applications. Features: DC Current Gain Specified to 7 Amps: hFE= 2.3 Min @ IC= 7A Collector–Emitter Sustaining Voltage: VCE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

LM196/LM396 10 Amp Adjustable Voltage Regulator

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