丝印代码：RHs；NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz

丝印代码：RHs；Low Noise Silicon Bipolar RF Transistor

文件：547.27 Kbytes Page：6 Pages

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)

文件：60.37 Kbytes Page：7 Pages

RF & Wireless Control-Low-Noise Si Transistors up to 2.5 GHz

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz

NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101

低噪声RF 管基

NPN 硅射频晶体管，用于集电极电流为 2 mA 至 30 mA 的低噪声、高增益宽带放大器 • 适用于低噪声、高增益宽带放大器，集电极电流为 2 mA 至 30 mA\n• 无铅（符合 RoHS 标准）封装;

Low Noise Silicon Bipolar RF Transistor

文件：547.27 Kbytes Page：6 Pages

Silicon NPN Planar RF Transistor

NPN Silicon RF Transistor

文件：82.8 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：548.79 Kbytes Page：6 Pages

NPN Silicon RF Transistor

文件：82.8 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：548.79 Kbytes Page：6 Pages

封装/外壳：SC-82A，SOT-343 包装：卷带（TR） 描述：RF TRANS NPN 12V 8GHZ SOT343-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：SC-82A，SOT-343 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 12V 8.5GHZ SOT343-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

Amplifier Transistors(NPN)

Aplifier Transistors NPN Silicon

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance at 945 MHz, 28 Vol

Silicon Complementary Transistors General Purpose Amplifier, Switch

Description: The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use in general purpose amplifier and switching applications. Features: • DC Current Gain Specified to 10A • High Current Gain–Bandwidth Product: fT = 2MHz (Min) @ IC = 500mA