NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)

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Low Noise Silicon Bipolar RF Transistor

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NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101

Low Noise Silicon Bipolar RF Transistor

文件：547.27 Kbytes Page：6 Pages

NPN Silicon RF Transistor

文件：82.8 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：548.79 Kbytes Page：6 Pages

NPN Silicon RF Transistor

文件：82.8 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：548.79 Kbytes Page：6 Pages

封装/外壳：SC-82A，SOT-343 包装：卷带（TR） 描述：RF TRANS NPN 12V 8GHZ SOT343-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：SC-82A，SOT-343 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 12V 8.5GHZ SOT343-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

Hybrid Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance

FEATURES • Long useful life: up to 4000 h at 125 °C • Very low ESR and high ripple current • High voltages up to 80 V • SMD-version with base plate, lead (Pb)-free reflow solderable • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Premier Supplier of Electronic Hardware

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Hybrid Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance

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Carbon Composition Molded OD/OF Series (5 Tol.) OA Series (10)

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PRINTED CIRCUIT PINS

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