NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101

NPN Silicon RF Transistor

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Low Noise Silicon Bipolar RF Transistor

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低噪声RF 管基

NPN Silicon RF Transistor

文件：82.8 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：548.79 Kbytes Page：6 Pages

封装/外壳：SC-82A，SOT-343 包装：卷带（TR） 描述：RF TRANS NPN 12V 8GHZ SOT343-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：SC-82A，SOT-343 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 12V 8.5GHZ SOT343-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

Hybrid Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance

FEATURES • Long useful life: up to 4000 h at 125 °C • Very low ESR and high ripple current • High voltages up to 80 V • SMD-version with base plate, lead (Pb)-free reflow solderable • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Premier Supplier of Electronic Hardware

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Hybrid Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance

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Carbon Composition Molded OD/OF Series (5 Tol.) OA Series (10)

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PRINTED CIRCUIT PINS

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