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BFG晶体管资料
BFG134别名:BFG134三极管、BFG134晶体管、BFG134晶体三极管
BFG134生产厂家:荷兰飞利浦公司
BFG134制作材料:Si-NPN
BFG134性质:超高频/特高频 (UHF)_微波 (MW)
BFG134封装形式:贴片封装
BFG134极限工作电压:25V
BFG134最大电流允许值:0.15A
BFG134最大工作频率:7.5GHZ
BFG134引脚数:4
BFG134最大耗散功率:1W
BFG134放大倍数:
BFG134图片代号:G-129
BFG134vtest:25
BFG134htest:7500000000
- BFG134atest:0.15
BFG134wtest:1
BFG134代换 BFG134用什么型号代替:
BFG价格
参考价格:¥68.1808
型号:BFG.00.100.PCSG 品牌:LEMO 备注:这里有BFG多少钱,2025年最近7天走势,今日出价,今日竞价,BFG批发/采购报价,BFG行情走势销售排行榜,BFG报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
NPN 2 GHz RF power transistor | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
NPN 2 GHz RF power transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinplastic,4-pindual-emitterSOT143package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Co | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 2 GHz RF power transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinplastic,4-pindual-emitterSOT143package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Co | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 2 GHz RF power transistor | ETC 知名厂家 | ETC | ||
UHF power transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic,4-pindual-emitterSOT343package. FEATURES •Highefficiency •Smallsizediscretepoweramplifier •900MHzand1.9GHzoperatingareas •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Common | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
NPN 2 GHz RF power transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinplastic,4-pindual-emitterSOT143package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Co | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
NPN 2 GHz RF power transistor | ETC 知名厂家 | ETC | ||
UHF power transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic,4-pindual-emitterSOT343package. FEATURES •Highefficiency •Smallsizediscretepoweramplifier •900MHzand1.9GHzoperatingareas •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Common | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
UHF power transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic,4-pindual-emitterSOT343package. FEATURES •Highefficiency •Smallsizediscretepoweramplifier •900MHzand1.9GHzoperatingareas •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Common | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
UHF power transistor | ETC 知名厂家 | ETC | ||
UHF power transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic,4-pindual-emitterSOT343package. FEATURES •Highefficiency •Smallsizediscretepoweramplifier •900MHzand1.9GHzoperatingareas •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Common | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
UHF power transistor | ETC 知名厂家 | ETC | ||
UHF power transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic,4-pindual-emitterSOT343package. FEATURES •Highefficiency •Smallsizediscretepoweramplifier •900MHzand1.9GHzoperatingareas •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Common | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
UHF power transistor | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
UHF power transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic,4-pindual-emitterSOT343package. FEATURES •Highefficiency •Smallsizediscretepoweramplifier •900MHzand1.9GHzoperatingareas •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Common | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
NPN 2 GHz RF power transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorsencapsulatedinaplastic,4-pindual-emitterSOT143package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability. APPLICATIONS • | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 2 GHz RF power transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorsencapsulatedinaplastic,4-pindual-emitterSOT143package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability. APPLICATIONS • | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 2 GHz RF power transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorsencapsulatedinaplastic,4-pindual-emitterSOT143package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability. APPLICATIONS • | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 2 GHz power transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic4-pindual-emitterSOT343package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability •Linearandnon-l | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 2 GHz power transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic4-pindual-emitterSOT343package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability •Linearandnon-l | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 2 GHz power transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic4-pindual-emitterSOT343package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability •Linearandnon-l | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 7GHz wideband transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorinaplasticSOT223envelope,intendedforwidebandamplifierapplications.Thesmallemitterstructures,withintegratedemitter-ballastingresistors,ensurehighoutputvoltagecapabilitiesatalowdistortionlevel. Thedistributionoft | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications) NPNSiliconRFTransistor •Forlow-distortionbroadbandamplifier stagesinantennaandtelecommunication systemsupto2GHzatcollectorcurrentsfrom 70mAto130mA •PoweramplifiersforDECTandPCNsystems •Integratedemitterballastresistor •fT=6GHz | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | |||
NPN Silicon RF Transistor NPNSiliconRFTransistor •Forlow-distortionbroadbandamplifier stagesinantennaandtelecommunication systemsupto2GHzatcollectorcurrentsfrom 70mAto130mA •PoweramplifiersforDECTandPCNsystems •Integratedemitterballastresistor •fT=6GHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | |||
NPN 2 GHz wideband transistor DESCRIPTION NPNtransistormountedinaplasticSOT223envelope. Itisprimarilyintendedforuseinwidebandamplifiers,aerialamplifiersandverticalamplifiersinhighspeedoscilloscopes. FEATURES •Highpowergain •Goodthermalstability •Goldmetallizationensuresexcellentreliabil | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 2 GHz wideband transistor DESCRIPTION NPNtransistormountedinaplasticSOT223envelope. Itisprimarilyintendedforuseinwidebandamplifiers,aerialamplifiersandverticalamplifiersinhighspeedoscilloscopes. FEATURES •Highpowergain •Goodthermalstability •Goldmetallizationensuresexcellentreliabil | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 3 GHz wideband transistor DESCRIPTION NPNwidebandtransistorinamicrominiatureplasticSOT143surfacemountingenvelopewithdoubleemitterbonding. ItisintendedforuseinwidebandaerialamplifiersusingSMDtechnology. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 3 GHz wideband transistor DESCRIPTION NPNwidebandtransistorinamicrominiatureplasticSOT143surfacemountingenvelopewithdoubleemitterbonding. ItisintendedforuseinwidebandaerialamplifiersusingSMDtechnology. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna) •Forlownoise,lowdistortionbroadbandamplifiersinantennaandtelecommunicationssystemsupto1.5GHzatcollectorcurrentsfrom10mAto70mA •CECC-typeavailable:CECC50002/259 | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | |||
NPN Silicon RF Transistor NPNSiliconRFTransistor •Forlownoise,lowdistortionbroadband amplifiersinantennaand telecommunicationsystemsupto1.5GHz atcollectorcurrentsfrom10mAto70mA | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | |||
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPNSiliconRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz F=1.3dBat900MHz | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | |||
NPN Silicon RF Transistor NPNSiliconRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz F=1.3dBat900MHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | |||
Silicon NPN RF Transistor DESCRIPTION •LowNoiseFigure NF=1.3dBTYP.@VCE=8V,IC=10mA,f=900MHz •HighGain ︱S21e︱2=13.5dBTYP.@VCE=8V,IC=30mA,f=900MHz APPLICATIONS •Designedforuseinlownoise,high-gainamplifiersand linearbroadbandamplifiers. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
Low Noise Figure DESCRIPTION •LowNoiseFigure NF=1.3dBTYP.@VCE=8V,IC=10mA,f=900MHz •HighGain ︱S21e︱2=13.5dBTYP.@VCE=8V,IC=30mA,f=900MHz APPLICATIONS •Designedforuseinlownoise,high-gainamplifiersand linearbroadbandamplifiers. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications) •Forlowdistortionbroadbandamplifiersinantennaandtelecommunicationssystemsupto1.5GHzatcollectorcurrentsfrom20mAto80mA | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | |||
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications) NPNSiliconRFTransistor •Forlownoise,lowdistortionbroadbandamplifiersinantennaandtelecommunicationssystemsupto1.5GHzatcollectorcurrentsfrom20mAto80mA •PoweramplifierforDECTandPCNsystems •fT=7.5GHz F=1.5dBat900MHz | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | |||
NPN Silicon RF Transistor NPNSiliconRFTransistor •Forlownoise,lowdistortionbroadbandamplifiersinantennaandtelecommunicationsystemsupto1.5GHzatcollectorcurrentsfrom20mAto80mA •PoweramplifierforDECTandPCNSystems •fT=7.5GHz F=1.5dBat900GHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | |||
NPN 7 GHz wideband transistor DESCRIPTION TheBFG197isasiliconNPNtransistorina4-pin,dual-emitterplasticSOT143envelope.ItisprimarilyintendedforwidebandapplicationsintheGHzrange,suchassatelliteTVsystemsandrepeateramplifiersinfibre-opticsystems. FEATURES •Highpowergain •Lownois | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 7 GHz wideband transistor DESCRIPTION TheBFG197isasiliconNPNtransistorina4-pin,dual-emitterplasticSOT143envelope.ItisprimarilyintendedforwidebandapplicationsintheGHzrange,suchassatelliteTVsystemsandrepeateramplifiersinfibre-opticsystems. FEATURES •Highpowergain •Lownois | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 7 GHz wideband transistor DESCRIPTION TheBFG197isasiliconNPNtransistorina4-pin,dual-emitterplasticSOT143envelope.ItisprimarilyintendedforwidebandapplicationsintheGHzrange,suchassatelliteTVsystemsandrepeateramplifiersinfibre-opticsystems. FEATURES •Highpowergain •Lownois | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 7 GHz wideband transistor DESCRIPTION TheBFG197isasiliconNPNtransistorina4-pin,dual-emitterplasticSOT143envelope.ItisprimarilyintendedforwidebandapplicationsintheGHzrange,suchassatelliteTVsystemsandrepeateramplifiersinfibre-opticsystems. FEATURES •Highpowergain •Lownois | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 7 GHz wideband transistor DESCRIPTION TheBFG197isasiliconNPNtransistorina4-pin,dual-emitterplasticSOT143envelope.ItisprimarilyintendedforwidebandapplicationsintheGHzrange,suchassatelliteTVsystemsandrepeateramplifiersinfibre-opticsystems. FEATURES •Highpowergain •Lownois | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 8 GHz wideband transistor DESCRIPTION NPNplanarepitaxialtransistorinaplasticSOT223envelope,intendedforwidebandamplifierapplications. Thedevicefeaturesahighgainandexcellentoutputvoltagecapabilities. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna) •Forlownoise,lowdistortionbroadbandamplifiersinantennaandtelecommunicationssystemsupto1.5GHzatcollectorcurrentsfrom10mAto70mA •CECC-typeavailable:CECC50002/259 | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | |||
NPN Silicon RF Transistor NPNSiliconRFTransistor •Forlownoise,lowdistortionbroadband amplifiersinantennaand telecommunicationsystemsupto1.5GHz atcollectorcurrentsfrom10mAto70mA | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | |||
UHF power transistor DESCRIPTION NPNdoublepolysiliconbipolarpowertransistorwithburiedlayerforlowvoltagemediumpowerapplicationsencapsulatedinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES •Highpowergain •Highefficiency •1.9GHzoperatingarea •Linearandnon-linearoperation. APP | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications) NPNSiliconRFTransistor •Forlow-distortionbroadbandoutputamplifier stagesinantennaandtelecommunications systemsupto2GHzatcollectorcurrentsfrom 120mAto250mA •PoweramplifiersforDECTandPCNsystems •Integratedemitterballastresistor •fT=5.5GHz | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | |||
NPN Silicon RF Transistor NPNSiliconRFTransistor ●Forlow-distortionbroadbandoutputamplifier stagesinantennaandtelecommunication systemsupto2GHzatcollectorcurrentsfrom 120mAto250mA ●PoweramplifiersforDECTandPCNsystems ●Integratedemitterballastresistor ●fT=5.5GHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | |||
NPN 5 GHz wideband transistor DESCRIPTION NPNsiliconwidebandtransistorinafour-leaddualemitterSOT143Bplasticpackage(crossemitter). FEATURES •Lowcurrentconsumption(100µAto1mA) •Lownoisefigure •Goldmetallizationensuresexcellentreliability. APPLICATIONS •RFlowpoweramplifiers,suchaspocket | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 5 GHz wideband transistor | ETC 知名厂家 | ETC | ||
NPN 5 GHz wideband transistor DESCRIPTION NPNsiliconwidebandtransistorinafour-leaddualemitterSOT143Bplasticpackage(crossemitter). FEATURES •Lowcurrentconsumption(100µAto1mA) •Lownoisefigure •Goldmetallizationensuresexcellentreliability. APPLICATIONS •RFlowpoweramplifiers,suchaspocket | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 5 GHz wideband transistor | ETC 知名厂家 | ETC |
BFG产品属性
- 类型
描述
- 型号
BFG
- 功能描述
两极晶体管 - BJT NPN Silicon RF Trans DISCONTINUED
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
25+ |
N/A |
860000 |
明嘉莱只做原装正品现货 |
|||
INFINEON |
24+ |
SOT23 |
6000 |
公司现货库存,支持实单 |
|||
恩XP |
23+ |
SOT-143 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
恩XP |
24+ |
NA/ |
3750 |
原装现货,当天可交货,原型号开票 |
|||
PHI |
04+ |
SOT-143 |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
恩XP |
25+ |
SOT343 |
20300 |
NXP/恩智浦原装特价BFG10W/X即刻询购立享优惠#长期有货 |
|||
恩XP |
24+ |
SOT143 |
80000 |
代理进口原装现货假一赔十 |
|||
SOT-143 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
PHI |
2450+ |
SOT143-4 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
PHI |
21+ |
SOT-143 |
12000 |
原装现货假一赔十 |
BFG规格书下载地址
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2020-8-5BF998,现货销售,只售原装,兴中扬电子
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