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BF9晶体管资料
BF906别名：BF906三极管、BF906晶体管、BF906晶体三极管
BF906生产厂家：美国得克萨斯仪表公司
BF906制作材料：Si-PNP
BF906性质：调幅 （AM）_调频 （FM）
BF906封装形式：直插封装
BF906极限工作电压：
BF906最大电流允许值：
BF906最大工作频率：>200MHZ
BF906引脚数：3
BF906最大耗散功率：
BF906放大倍数：
BF906图片代号：A-23
BF906vtest：0
BF906htest：200000100
- BF906atest：0
BF906wtest：0
BF906代换 BF906用什么型号代替：BF324,BF440,BF441,BF450,BF451,BF706,3CG112C,
BF9价格
参考价格：￥1372.8183
型号：BF9 品牌：Woodhead 备注：这里有BF9多少钱，2024年最近7天走势，今日出价，今日竞价，BF9批发/采购报价，BF9行情走势销售排行榜，BF9报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon n-channel dual gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorsinplasticmicrominiatureSOT143andSOT143Renvelopes,withsourceandsubstrateinterconnected.TheyareintendedforUHFandVHFapplications,suchastelevisiontunersandprofessionalcommunicationsequipmentespeciallysuitedforlowvol | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  |   | |
Silicon n-channel dual gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorsinplasticmicrominiatureSOT143andSOT143Renvelopes,withsourceandsubstrateinterconnected.TheyareintendedforUHFandVHFapplications,suchastelevisiontunersandprofessionalcommunicationsequipmentespeciallysuitedforlowvol | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
N-channel dual gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143BandSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
N-channel dual gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143BandSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | | |
N-channel dual gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
N-channel dual gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channel dual gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channel dual gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channel dual gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
N-channel dual gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channel dual gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143BandSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
N-channel dual gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143BandSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channel dual-gate MOS-FET DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT343Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Speciallyde | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Dual-gate MOS-FETs DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.Thetransistorsareprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES •Highforwardtransferadmittance •Shortch | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Dual-gate MOS-FETs DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.Thetransistorsareprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES •Highforwardtransferadmittance •Shortch | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Dual-gate MOS-FETs DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.Thetransistorsareprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES •Highforwardtransferadmittance •Shortch | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Dual-gate MOS-FETs DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.Thetransistorsareprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES •Highforwardtransferadmittance •Shortch | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channel dual-gate MOS-FET DESCRIPTION DepletiontypefieldeffecttransistorinaplasticmicrominiatureSOT343Rpackage.Thetransistoris protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES •Highforwardtransferadmittance •Shortchanne | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channel dual gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Sp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channel dual gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Sp | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channel dual gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Sp | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
N-channel dual gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Sp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channel dual-gate MOS-FET DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT343Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Speciallyde | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
VHF Transistor(NPN) NPNSilicon | MotorolaMotorola, Inc 摩托罗拉 |  | | |
NPN Silicon RF Transistor (For SAW filter driver applications in TV tuners For linear broadband VHF amplifier stages) ●ForSAWfilterdriverapplicationsinTVtuners ●ForlinearbroadbandVHFamplifierstages ●Foroscillatorapplications | SIEMENS Siemens Ltd |  | | |
VHF Transistor NPN Silicon VHFTransistor NPNSilicon Features •Pb−FreePackagesareAvailable* | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF959ISASILICONNPNTRANSISTORINTENDEDFORUSEATVERYHIGHFREQUENCIES. | CDIL CDIL |  | | |
VHF Transistor VHFTransistor NPNSilicon Features •Pb−FreePackagesareAvailable* | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features •Integratedgateprotectiondiodes •Highcrossmodulationperformance •Lownoisefigure •HighAGC-range •Lowfeedbackcapacitance •Lowinputcapacitance Applications Input-andmixerstageses | VishayVishay Siliconix 威世科技 |  | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features •Integratedgateprotectiondiodes •Highcrossmodulationperformance •Lownoisefigure •HighAGC-range •Lowfeedbackcapacitance •Lowinputcapacitance Applications Input-andmixerstageses | VishayVishay Siliconix 威世科技 | | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features •Integratedgateprotectiondiodes •Highcrossmodulationperformance •Lownoisefigure •HighAGC-range •Lowfeedbackcapacitance •Lowinputcapacitance Applications Input-andmixerstageses | VishayVishay Siliconix 威世科技 | | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Applications Input-andmixerstagesespeciallyVHFTV-tuners. Features Integratedgateprotectiondiodes Highcrossmodulationperformance Lownoisefigure HighAGC-range Lowfeedbackcapacitance Lowinputcapacitance | VishayVishay Siliconix 威世科技 | | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Applications Input-andmixerstagesespeciallyVHFTV-tuners. Features Integratedgateprotectiondiodes Highcrossmodulationperformance Lownoisefigure HighAGC-range Lowfeedbackcapacitance Lowinputcapacitance | VishayVishay Siliconix 威世科技 | | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode - Depletion Mode Features: *IntegratedGateprotectiondiodes *HighAGC-range *Highcrossmodulationperformance *Lowfeedbackcapacitance *Lownoisefigure *Lowinputcapacitance | TFUNKVishay Telefunken 威世威世（VISHAY）集团 |  | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Applications Input-andmixerstagesespeciallyUHF-tuners. Features Integratedgateprotectiondiodes Highcrossmodulationperformance Lownoisefigure HighAGC-range Lowfeedbackcapacitance Lowinputcapacitance | VishayVishay Siliconix 威世科技 | | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Applications Input-andmixerstagesespeciallyUHF-tuners. Features Integratedgateprotectiondiodes Highcrossmodulationperformance Lownoisefigure HighAGC-range Lowfeedbackcapacitance Lowinputcapacitance | VishayVishay Siliconix 威世科技 | | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Applications Input-andmixerstagesespeciallyUHF-tuners. Features Integratedgateprotectiondiodes Highcrossmodulationperformance Lownoisefigure HighAGC-range Lowfeedbackcapacitance Lowinputcapacitance | VishayVishay Siliconix 威世科技 | | | |
Silicon PNP Planar RF Transistor Applications UHF/VHFuncontrolledprestageswithlownoiseandlowmodulation. Features Highcrossmodulationperformance Highpowergain Lownoise Highreverseattenuation | VishayVishay Siliconix 威世科技 | | | |
PNP SILICON PLANAR TRANSISTOR BF976SisaPNPsiliconplanartransistorinlow-capacitanceplasticpackagesimilartoTO119(50B3DIN41867). ThetransistorisparticularlysuitableforuseinuncontrolledUHFandVHFinputstagesfeaturinglowcrossmodulation. | SIEMENS Siemens Ltd | | | |
SILICON N-CHANNEL DUAL GATE MOS-FET SILICONN-CHNNELDUALGATEMOS-FET | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features •Integratedgateprotectiondiodes •Highcrossmodulationperformance •Lownoisefigure •Highgain •HighAGC-range •Lowfeedbackcapacitance •Lowinputcapacitance •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications | VishayVishay Siliconix 威世科技 | | | |
N-channel dual-gate MOS-FET DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES •Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS •UHFapplicationssuch | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
N-channel dual-gate MOS-FET DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES •Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS •RFapplicationssucha | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
N-channel dual-gate MOS-FET DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES •Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS •VHFapplicationssuch | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
N-channel dual-gate MOS-FET DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES •Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS •VHFapplicationssuch | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Silicon N-channel dual gate MOS-FET DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicro-miniatureSOT143Bpackagewithsourceandsubstrateinterconnected. Thetransistorisprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS •VHFapplicatio | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Silicon N-channel dual gate MOS-FET DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicro-miniatureSOT143Bpackagewithsourceandsubstrateinterconnected. Thetransistorisprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS •VHFapplicatio | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | |
BF9产品属性
- 类型
描述
- 型号
BF9
- 制造商
Molex
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NXP |
20+ |
SOT143 |
49000 |
原装优势主营型号-可开原型号增税票 |
|||
NXP/恩智浦 |
23+ |
SOT143 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
SOT-143 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
BYD |
24+ |
SMD |
990000 |
明嘉莱只做原装正品现货 |
|||
BYD比亚迪 |
2015+ |
DFN-8L |
29898 |
专业代理手机P-MOS管,型号齐全,优势产品 |
|||
NXP/恩智浦 |
SOT-143 |
6000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
||||
NXP |
1742+ |
SOT143 |
98215 |
只要网上有绝对有货!只做原装正品! |
|||
BYD |
21+ |
MSOP6 |
5287 |
原装现货假一赔十 |
|||
NXP/恩智浦 |
23+ |
NA/ |
6000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
BYD比亚迪 |
23+ |
DFN-8L |
593428 |
MOS管原装现货有优势 |
BF9芯片相关品牌
BF9规格书下载地址
BF9参数引脚图相关
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BF9数据表相关新闻
BFG235
进口代理
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BF7612CM28，BYD，40K，21+
2021-11-10BF862215
JFET-25V射频结栅场效应晶体管(RFJFET)晶体管,SMD/SMT射频结栅场效应晶体管(RFJFET)晶体管,JFET射频结栅场效应晶体管(RFJFET)晶体管,GaNSiCSMD/SMT射频结栅场效应晶体管(RFJFET)晶体管,JFETN-Channel射频结栅场效应晶体管(RFJFET)晶体管,MESFET射
2020-8-5BF998，现货销售，只售原装，兴中扬电子
BF998，现货销售，只售原装，兴中扬电子
2019-11-30
DdatasheetPDF页码索引
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