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BF9晶体管资料

BF906别名：BF906三极管、BF906晶体管、BF906晶体三极管
BF906生产厂家：美国得克萨斯仪表公司
BF906制作材料：Si-PNP
BF906性质：调幅（AM）_调频（FM）
BF906封装形式：直插封装
BF906极限工作电压：
BF906最大电流允许值：
BF906最大工作频率：>200MHZ
BF906引脚数：3
BF906最大耗散功率：
BF906放大倍数：
BF906图片代号：A-23
BF906vtest：0
BF906htest：200000100
BF906atest：0
BF906wtest：0

BF906代换 BF906用什么型号代替：BF324,BF440,BF441,BF450,BF451,BF706,3CG112C,

BF9价格

参考价格：￥1372.8183

型号：BF9 品牌：Woodhead 备注：这里有BF9多少钱，2025年最近7天走势，今日出价，今日竞价，BF9批发/采购报价，BF9行情走势销售排行榜，BF9报价。

型号	功能描述	生产厂家&企业	LOGO
BF901	Silicon n-channel dual gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorsinplasticmicrominiatureSOT143andSOT143Renvelopes,withsourceandsubstrateinterconnected.TheyareintendedforUHFandVHFapplications,suchastelevisiontunersandprofessionalcommunicationsequipmentespeciallysuitedforlowvol	PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BF901R	Silicon n-channel dual gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorsinplasticmicrominiatureSOT143andSOT143Renvelopes,withsourceandsubstrateinterconnected.TheyareintendedforUHFandVHFapplications,suchastelevisiontunersandprofessionalcommunicationsequipmentespeciallysuitedforlowvol	PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BF904	N-channel dual gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143BandSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES	PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BF904	N-channel dual gate MOS-FETs	ETC 知名厂家	ETC
BF904A	N-channel dual gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S	PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BF904A	N-channel dual gate MOS-FETs	ETC 知名厂家	ETC
BF904A	RF Manual 16th edition	ETC 知名厂家	ETC
BF904AR	N-channel dual gate MOS-FETs	ETC 知名厂家	ETC
BF904AR	N-channel dual gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S	PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BF904AR	RF Manual 16th edition	ETC 知名厂家	ETC
BF904AWR	N-channel dual gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S	PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BF904AWR	N-channel dual gate MOS-FETs	ETC 知名厂家	ETC
BF904AWR	RF Manual 16th edition	ETC 知名厂家	ETC
BF904R	N-channel dual gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143BandSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES	PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BF904R	N-channel dual gate MOS-FETs	ETC 知名厂家	ETC
BF904WR	N-channel dual-gate MOS-FET DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT343Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Speciallyde	PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BF908	Dual-gate MOS-FETs DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.Thetransistorsareprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES •Highforwardtransferadmittance •Shortch	PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BF908	Dual-gate MOS-FETs	ETC 知名厂家	ETC
BF908	RF Manual 16th edition	ETC 知名厂家	ETC
BF908R	Dual-gate MOS-FETs DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.Thetransistorsareprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES •Highforwardtransferadmittance •Shortch	PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BF908R	Dual-gate MOS-FETs	ETC 知名厂家	ETC
BF908R	RF Manual 16th edition	ETC 知名厂家	ETC
BF908WR	N-channel dual-gate MOS-FET DESCRIPTION DepletiontypefieldeffecttransistorinaplasticmicrominiatureSOT343Rpackage.Thetransistoris protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES •Highforwardtransferadmittance •Shortchanne	PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BF908WR	RF Manual 16th edition	ETC 知名厂家	ETC
BF909	N-channel dual gate MOS-FETs	ETC 知名厂家	ETC
BF909	N-channel dual gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Sp	PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BF909	RF Manual 16th edition	ETC 知名厂家	ETC
BF909A	RF Manual 16th edition	ETC 知名厂家	ETC
BF909AR	RF Manual 16th edition	ETC 知名厂家	ETC
BF909AWR	RF Manual 16th edition	ETC 知名厂家	ETC
BF909R	N-channel dual gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Sp	PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BF909R	N-channel dual gate MOS-FETs	ETC 知名厂家	ETC
BF909R	RF Manual 16th edition	ETC 知名厂家	ETC
BF909WR	N-channel dual-gate MOS-FET DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT343Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Speciallyde	PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BF909WR	RF Manual 16th edition	ETC 知名厂家	ETC
BF959	VHF Transistor(NPN) NPNSilicon	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
BF959	NPN Silicon RF Transistor (For SAW filter driver applications in TV tuners For linear broadband VHF amplifier stages) ●ForSAWfilterdriverapplicationsinTVtuners ●ForlinearbroadbandVHFamplifierstages ●Foroscillatorapplications	SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司
BF959	VHF Transistor NPN Silicon VHFTransistor NPNSilicon Features •Pb−FreePackagesareAvailable*	ONSEMION Semiconductor 安森美半导体安森美半导体公司
BF959	NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF959ISASILICONNPNTRANSISTORINTENDEDFORUSEATVERYHIGHFREQUENCIES.	CDIL Continental Device India Limited
BF959RL1	VHF Transistor VHFTransistor NPNSilicon Features •Pb−FreePackagesareAvailable*	ONSEMION Semiconductor 安森美半导体安森美半导体公司
BF961	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features •Integratedgateprotectiondiodes •Highcrossmodulationperformance •Lownoisefigure •HighAGC-range •Lowfeedbackcapacitance •Lowinputcapacitance Applications Input-andmixerstageses	VishayVishay Siliconix 威世科技威世科技半导体
BF961A	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features •Integratedgateprotectiondiodes •Highcrossmodulationperformance •Lownoisefigure •HighAGC-range •Lowfeedbackcapacitance •Lowinputcapacitance Applications Input-andmixerstageses	VishayVishay Siliconix 威世科技威世科技半导体
BF961B	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features •Integratedgateprotectiondiodes •Highcrossmodulationperformance •Lownoisefigure •HighAGC-range •Lowfeedbackcapacitance •Lowinputcapacitance Applications Input-andmixerstageses	VishayVishay Siliconix 威世科技威世科技半导体
BF964	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Applications Input-andmixerstagesespeciallyVHFTV-tuners. Features Integratedgateprotectiondiodes Highcrossmodulationperformance Lownoisefigure HighAGC-range Lowfeedbackcapacitance Lowinputcapacitance	VishayVishay Siliconix 威世科技威世科技半导体
BF964S	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Applications Input-andmixerstagesespeciallyVHFTV-tuners. Features Integratedgateprotectiondiodes Highcrossmodulationperformance Lownoisefigure HighAGC-range Lowfeedbackcapacitance Lowinputcapacitance	VishayVishay Siliconix 威世科技威世科技半导体
BF966	N-Channel Dual Gate MOS-Fieldeffect Tetrode - Depletion Mode Features: IntegratedGateprotectiondiodes HighAGC-range Highcrossmodulationperformance Lowfeedbackcapacitance Lownoisefigure Lowinputcapacitance	TFUNKVishay Telefunken 威世威世（VISHAY）集团
BF966S	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Applications Input-andmixerstagesespeciallyUHF-tuners. Features Integratedgateprotectiondiodes Highcrossmodulationperformance Lownoisefigure HighAGC-range Lowfeedbackcapacitance Lowinputcapacitance	VishayVishay Siliconix 威世科技威世科技半导体
BF966SA	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Applications Input-andmixerstagesespeciallyUHF-tuners. Features Integratedgateprotectiondiodes Highcrossmodulationperformance Lownoisefigure HighAGC-range Lowfeedbackcapacitance Lowinputcapacitance	VishayVishay Siliconix 威世科技威世科技半导体
BF966SB	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Applications Input-andmixerstagesespeciallyUHF-tuners. Features Integratedgateprotectiondiodes Highcrossmodulationperformance Lownoisefigure HighAGC-range Lowfeedbackcapacitance Lowinputcapacitance	VishayVishay Siliconix 威世科技威世科技半导体
BF979	Silicon PNP Planar RF Transistor Applications UHF/VHFuncontrolledprestageswithlownoiseandlowmodulation. Features Highcrossmodulationperformance Highpowergain Lownoise Highreverseattenuation	VishayVishay Siliconix 威世科技威世科技半导体
BF979S	PNP SILICON PLANAR TRANSISTOR BF976SisaPNPsiliconplanartransistorinlow-capacitanceplasticpackagesimilartoTO119(50B3DIN41867). ThetransistorisparticularlysuitableforuseinuncontrolledUHFandVHFinputstagesfeaturinglowcrossmodulation.	SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司
BF981	SILICON N-CHANNEL DUAL GATE MOS-FET SILICONN-CHNNELDUALGATEMOS-FET	PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BF988	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features •Integratedgateprotectiondiodes •Highcrossmodulationperformance •Lownoisefigure •Highgain •HighAGC-range •Lowfeedbackcapacitance •Lowinputcapacitance •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications	VishayVishay Siliconix 威世科技威世科技半导体
BF989	N-channel dual-gate MOS-FET DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES •Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS •UHFapplicationssuch	PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BF990A	N-channel dual-gate MOS-FET DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES •Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS •RFapplicationssucha	PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BF991	N-channel dual-gate MOS-FET DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES •Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS •VHFapplicationssuch	PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BF991	N-channel dual-gate MOS-FET	ETC 知名厂家	ETC
BF991	RF Manual 16th edition	ETC 知名厂家	ETC
BF992	Silicon N-channel dual gate MOS-FET DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicro-miniatureSOT143Bpackagewithsourceandsubstrateinterconnected. Thetransistorisprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS •VHFapplicatio	PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦	Philips
BF992	Silicon N-channel dual gate MOS-FET	ETC 知名厂家	ETC

BF9产品属性

类型
描述
型号
BF9
制造商
Molex

BF9供应商更多...

更新时间：2025-7-23 11:14:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市锦喆鸿电子有限公司	BF9024SPD-M	BYD	21+	0935+	12588	原装正品,自己库存假一罚十	询价
贸泽芯城（深圳）电子科技有限公司	BF901R	恩XP	23+		393000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市威尔健半导体有限公司	BF901R	恩XP	23+	SOT-143	50000	全新原装正品现货,支持订货	询价
深圳市卓越微芯电子有限公司	BF9024SPD-M	BYD	2020+	QFN8	87	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市粤骏腾电子科技有限公司	BF9024	BYD比亚迪	24+	DFN-8L	593428	MOS管原装现货有优势	询价
深圳市一线半导体有限公司	BF901R	PHI	24+	SOT-143	9000		询价
深圳市创新迹电子有限公司	BF901R	恩XP	22+	SOT143	25000	只有原装原装,支持BOM配单	询价
深圳市安富世纪电子有限公司	BF90210DND-GE	BYD	23+	MSOP6	50000	全新原装正品现货,支持订货	询价
深圳诚思涵科技有限公司	BF901R	ST	24+	TO126	12866	公司现货库存,支持实单	询价
深圳市鹏和科技有限公司	BF901R	恩XP	24+	SOT-143	5000	全现原装公司现货	询价

BF9芯片相关品牌

BF9规格书下载地址

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BF9数据表相关新闻

BFG235
进口代理
2022-11-12
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BFC233920474
2022-10-13
BF7612CM28，40k现货，批次21+
BF7612CM28，40k现货，批次21+
2021-11-18
BF7612CM28，BYD，40K，21+
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BF862215
JFET-25V射频结栅场效应晶体管(RFJFET)晶体管,SMD/SMT射频结栅场效应晶体管(RFJFET)晶体管,JFET射频结栅场效应晶体管(RFJFET)晶体管,GaNSiCSMD/SMT射频结栅场效应晶体管(RFJFET)晶体管,JFETN-Channel射频结栅场效应晶体管(RFJFET)晶体管,MESFET射
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BF998，现货销售，只售原装，兴中扬电子
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BF9晶体管资料

BF9价格

BF9产品属性

BF9供应商更多...

BF9芯片相关品牌

BF9规格书下载地址

BF9参数引脚图相关

BF9数据表相关新闻

BFG235

BFC233920474

BF7612CM28，40k现货，批次21+

BF7612CM28，BYD，40K，21+

BF862215

BF998，现货销售，只售原装，兴中扬电子

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