BF857晶体管资料
BF857别名:BF857三极管、BF857晶体管、BF857晶体三极管
BF857生产厂家:德国西门子AG公司_德国凡尔伏公司
BF857制作材料:Si-NPN
BF857性质:视频输出 (Vid)_功率放大 (L)
BF857封装形式:直插封装
BF857极限工作电压:160V
BF857最大电流允许值:0.2A
BF857最大工作频率:90MHZ
BF857引脚数:3
BF857最大耗散功率:6W
BF857放大倍数:
BF857图片代号:B-84
BF857vtest:160
BF857htest:90000000
- BF857atest:0.2
BF857wtest:6
BF857代换 BF857用什么型号代替:BF469,BF615,BF757,BF758,BF759,BF880,BF881,3DK204D,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BF857 | NPN high-voltage transistors Integrated Circuits | PHILIPS 飞利浦 | ||
BF857 | NPN high-voltage transistor | ETC 知名厂家 | ETC | |
PNP general purpose transistors DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching | PHILIPS 飞利浦 | |||
NPN SILICON RF POWER TRANSISTOR The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics Output Power = 2. | MOTOROLA 摩托罗拉 | |||
Integrated Circuit Low-Noise JFET-Input Operational Amplifier Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of | NTE | |||
Integrated Circuit Low-Noise JFET-Input Operational Amplifier Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of | NTE | |||
Integrated Circuit Low-Noise JFET-Input Operational Amplifier Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of | NTE |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
SOT23 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
恩XP |
04+ |
TO-202 |
80 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
恩XP |
24+ |
N/A |
6000 |
原厂原装,价格优势,欢迎洽谈! |
|||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
恩XP |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
Nexperia |
25+ |
N/A |
20000 |
||||
恩XP |
25+ |
N/A |
20000 |
原装,请咨询 |
|||
PHI |
22+ |
SOT23-3 |
8000 |
原装正品支持实单 |
|||
恩XP |
23+ |
标准封装 |
6000 |
正规渠道,只有原装! |
|||
PHI |
24+ |
2000 |
BF857芯片相关品牌
BF857规格书下载地址
BF857参数引脚图相关
- c9012
- c901
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- BF904A
- BF904
- BF901R
- BF901
- BF8-F
- BF888
- BF885S
- BF883S
- BF881
- BF872
- BF871BA
- BF871(A,S,SA)
- BF871
- BF870EA
- BF870BA
- BF870(A,S,SA)
- BF870
- BF869EA
- BF869BA
- BF869(A,S,SA)
- BF869
- BF862
- BF861C
- BF861B
- BF861A
- BF861
- BF860
- BF859EA
- BF859BA
- BF859A
- BF859
- BF858EA
- BF858BA
- BF858A
- BF858
- BF857EA
- BF857BA
- BF857A
- BF850BF
- BF850
- BF849
- BF848
- BF847
- BF845
- BF844
- BF841
- BF840
- BF824W
- BF824
- BF823W
- BF823(S)
- BF823
- BF822W
- BF822(S)
- BF822
- BF821W
- BF821(S)
- BF821
- BF820W
- BF820(S)
- BF820
- BF819A
- BF819
- BF806
- BF805
- BF804
- BF803
BF857数据表相关新闻
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JFET - 25 V 射频结栅场效应晶体管(RF JFET)晶体管 , SMD/SMT 射频结栅场效应晶体管(RF JFET)晶体管 , JFET 射频结栅场效应晶体管(RF JFET)晶体管 , GaN SiC SMD/SMT 射频结栅场效应晶体管(RF JFET)晶体管 , JFET N-Channel 射频结栅场效应晶体管(RF JFET)晶体管 , MESFET 射
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2019-11-30
DdatasheetPDF页码索引
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