NPN medium frequency transistor

DESCRIPTION NPN medium frequency transistor in a SOT23 plastic package. FEATURES • Low current (max. 25 mA) • Low voltage (max. 40 V). APPLICATIONS • AM mixers • IF amplifiers in AM/FM receivers.

SILICON PLANAR TRANSISTORS

SILICON PLANAR TRANSISTORS SOT-23 Formed SMD Package N–P–N transistors

NPN medium frequency transistor

NPN Medium Frequency Transistor

Features ● Low current (max. 25 mA). ● Low voltage (max. 40 V).

NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion)

● Suitable for common emitter RF, IF amplifiers ● Low collector-base capacitance due to contact shield diffusion ● Low output conductance

丝印代码：NC；NPN medium frequency transistor

FEATURES •Low current (max. 25 mA) •Low voltage (max. 40 V). APPLICATIONS •AM mixers •IF amplifiers in AM/FM receivers. DESCRIPTION NPN medium frequency transistor in a SOT23 plastic package.

NPN Silicon RF Transistors

● Suitable for common emitter RF, IF amplifiers\n● Low collector-base capacitance due to contact shield diffusion\n● Low output conductance

SOT-23 - Power Transistor and Darlingtons

文件：27.5 Kbytes Page：2 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 40V 0.025A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 40V 0.025A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

ULTRAFAST RECTIFIERS 8 AMPERES 200-400-600 VOLTS

. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets U

ULTRAFAST RECTIFIER 8.0 AMPERES 400 VOLTS

. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 28 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets UL94, VO @ 1/8″ • High T

RF POWER TRANSISTOR NPN SILICON

文件：91.92 Kbytes Page：4 Pages

ULTRAFAST RECTIFIER 8.0 AMPERES 400 VOLTS

文件：107.56 Kbytes Page：6 Pages