NPN high-voltage transistors

DESCRIPTION NPN high-voltage transistor in a SOT23 plastic package. PNP complements: BF821; BF823. FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony and professional communication equipment.

SILICON EPITAXIAL TRANSISTORS

SILICON EPITAXIAL TRANSISTORS N–P–N transistors SOT-23 Formed SMD Package

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation – 1.5 W • Plastic case SOT-223 • Weight approx. – 0.04 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation – 1.5 W • Plastic case SOT-223 • Weight approx. – 0.04 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

NPN high-voltage transistors

NPN General Purpose Amplifier

FEATURES ● Low current(max.50mA). ● High voltage(max.300V). APPLICATIONS ● Telephony and professional communication equipment.

丝印代码：1X；Small Signal Transistors (NPN)

FEATURES ◆ NPN Silicon Epitaxial Planar Transistors especially suited for application in class-B video output stages of TV receivers and monitors. ◆ As complementary types, the PNP transistors BF821 and BF823 are recommended.

TRANSISTOR (NPN)

FEATURES ● Low current (max.50 mA) ● High voltage (max.300V) ● Telephony and professional communication equipment.

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low current (max.50 mA) ● High voltage (max.300V) ● Telephony and professional communication equipment.

NPN High-Voltage Transistors

Features ● Low current (max. 50 mA) ● High voltage (max. 300 V).

丝印代码：1X；SOT-23 Plastic-Encapsulate Transistors

FEATURES Low current (max.50 mA) High voltage (max.300V) Telephony and professional communication equipment.

丝印代码：1X；NPN high voltage transistor

1. General description NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BF823 2. Features and benefits • Low current (max. 50 mA) • High voltage (max. 300 V) 3. Applications • Telephony and professional communication equipment

250V,0.05A,General Purpose NPN Bipolar Transistor

小信号晶体管

晶体管

Silicon NPN transistor in a SOT-23 Plastic Package

文件：1.09437 Mbytes Page：6 Pages

SOT-23 - Power Transistor and Darlingtons

文件：27.5 Kbytes Page：2 Pages

丝印代码：1X；NPN high voltage transistor

1. General description NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BF823-Q 2. Features and benefits • Low current (max. 50 mA) • High voltage (max. 300 V) • Qualified according to AEC-Q101 and recommended for use in automotive

NPN High-Voltage Transistor

Features ● Low current (max. 50 mA) ● High voltage (max. 250 V).

丝印代码：1W*；NPN high-voltage transistors

DESCRIPTION NPN high-voltage transistor in a SOT323 plastic package. FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony and professional communication equipment.

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 250V 0.05A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

8-Bit CMOS ROM Based Microcontrollers with 1k or 2k Memory, Comparator and Brown Out Detector

General Description The COP820CJ/840CJ Family ROM based microcontrollers are integrated COP8™Base core devices with 1k or 2k memory, an Analog comparator and Brownout detection. These single-chip CMOS devices are suited for lower functionality applications where power and voltage fluctuations a

8-Bit CMOS ROM Based Microcontrollers with 1k or 2k Memory, Comparator and Brown Out Detector

General Description The COP820CJ/840CJ Family ROM based microcontrollers are integrated COP8™Base core devices with 1k or 2k memory, an Analog comparator and Brownout detection. These single-chip CMOS devices are suited for lower functionality applications where power and voltage fluctuations a

Low Voltage, Low Power, R-to-R Output, 5 MHz Op Amps

文件：1.06883 Mbytes Page：24 Pages

Low Voltage, Low Power, R-to-R Output, 5 MHz Op Amps

文件：1.06883 Mbytes Page：24 Pages

Low Voltage, Low Power, R-to-R Output, 5 MHz Op Amps

文件：1.06883 Mbytes Page：24 Pages