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BF8晶体管资料

BF819别名：BF819三极管、BF819晶体管、BF819晶体三极管
BF819生产厂家：
BF819制作材料：Si-NPN
BF819性质：视频输出（Vid）_功率放大（L）_电视（TV）
BF819封装形式：直插封装
BF819极限工作电压：300V
BF819最大电流允许值：0.1A
BF819最大工作频率：<1MHZ或未知
BF819引脚数：3
BF819最大耗散功率：6W
BF819放大倍数：
BF819图片代号：A-83
BF819vtest：300
BF819htest：999900
BF819atest：0.1
BF819wtest：6

BF819代换 BF819用什么型号代替：BF617,BF859,BF880,BF881,MJE340,

BF8价格

参考价格：￥71.7845

型号：BF8100-UVC 品牌：J.K.L. 备注：这里有BF8多少钱，2025年最近7天走势，今日出价，今日竞价，BF8批发/采购报价，BF8行情走势销售排行榜，BF8报价。

型号	功能描述	生产厂家&企业	LOGO
BF8	Mounting flange 文件：256.23 Kbytes Page：1 Pages	PF 倍加福	PF
BF800	Discrete Semiconductors Discrets Semiconductors FETs For VHF Amplifiers and Mixers For Low Noise Amplifiers Low leakage/Noise Current Dual Gate Mosfets (N Channel Depletion) Low leakge	AMMSEMI	AMMSEMI
BF801	Discrete Semiconductors Discrets Semiconductors FETs For VHF Amplifiers and Mixers For Low Noise Amplifiers Low leakage/Noise Current Dual Gate Mosfets (N Channel Depletion) Low leakge	AMMSEMI	AMMSEMI
BF802	Discrete Semiconductors Discrets Semiconductors FETs For VHF Amplifiers and Mixers For Low Noise Amplifiers Low leakage/Noise Current Dual Gate Mosfets (N Channel Depletion) Low leakge	AMMSEMI	AMMSEMI
BF803	Discrete Semiconductors Discrets Semiconductors FETs For VHF Amplifiers and Mixers For Low Noise Amplifiers Low leakage/Noise Current Dual Gate Mosfets (N Channel Depletion) Low leakge	AMMSEMI	AMMSEMI
BF804	Discrete Semiconductors Discrets Semiconductors FETs For VHF Amplifiers and Mixers For Low Noise Amplifiers Low leakage/Noise Current Dual Gate Mosfets (N Channel Depletion) Low leakge	AMMSEMI	AMMSEMI
BF805	Discrete Semiconductors Discrets Semiconductors FETs For VHF Amplifiers and Mixers For Low Noise Amplifiers Low leakage/Noise Current Dual Gate Mosfets (N Channel Depletion) Low leakge	AMMSEMI	AMMSEMI
BF806	Discrete Semiconductors Discrets Semiconductors FETs For VHF Amplifiers and Mixers For Low Noise Amplifiers Low leakage/Noise Current Dual Gate Mosfets (N Channel Depletion) Low leakge	AMMSEMI	AMMSEMI
BF819	NPN high-voltage transistor DESCRIPTION NPN high-voltage transistor in a TO-202; SOT128B plastic package. FEATURES • Low current (max. 100 mA) • High voltage (max. 250 V). APPLICATIONS • Driver for a line output transistor in colour television receivers.	Philips 飞利浦	Philips
BF820	TRANSISTOR (NPN) FEATURES ● Low current (max.50 mA) ● High voltage (max.300V) ● Telephony and professional communication equipment.	HTSEMI 金誉半导体	HTSEMI
BF820	SOT-23 Plastic-Encapsulate Transistors FEATURES Low current (max.50 mA) High voltage (max.300V) Telephony and professional communication equipment.	DGNJDZ 南晶电子	DGNJDZ
BF820	SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Low current (max.50 mA) ● High voltage (max.300V) ● Telephony and professional communication equipment.	JIANGSU 长电科技	JIANGSU
BF820	SILICON EPITAXIAL TRANSISTORS SILICON EPITAXIAL TRANSISTORS N–P–N transistors SOT-23 Formed SMD Package	CDIL	CDIL
BF820	Silicon NPN transistor in a SOT-23 Plastic Package Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low current, high voltage. Applications Telephony and professional communication equipment	FOSHAN 蓝箭电子	FOSHAN
BF820	NPN high voltage transistor 1. General description NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BF821 2. Features and benefits • Low current (max. 50 mA) • High voltage (max. 300 V) 3. Applications • Telephony and professional communication equipment	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
BF820	Small Signal Transistors (NPN) FEATURES ◆ NPN Silicon Epitaxial Planar Transistors especially suited for application in class-B video output stages of TV receivers and monitors. ◆ As complementary types, the PNP transistors BF821 and BF823 are recommended.	GE GE Industrial Company	GE
BF820	Surface mount Si-Epitaxial PlanarTransistors Surface mount Si-Epitaxial PlanarTransistors • Power dissipation – 1.5 W • Plastic case SOT-223 • Weight approx. – 0.04 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled	Diotec 德欧泰克	Diotec
BF820	Surface mount Si-Epitaxial PlanarTransistors Surface mount Si-Epitaxial PlanarTransistors • Power dissipation – 1.5 W • Plastic case SOT-223 • Weight approx. – 0.04 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled	Diotec 德欧泰克	Diotec
BF820	NPN General Purpose Amplifier FEATURES ● Low current(max.50mA). ● High voltage(max.300V). APPLICATIONS ● Telephony and professional communication equipment.	BILIN 银河微电	BILIN
BF820	NPN high-voltage transistors	ETC 知名厂家	ETC
BF820	NPN high-voltage transistors DESCRIPTION NPN high-voltage transistor in a SOT23 plastic package. PNP complements: BF821; BF823. FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony and professional communication equipment.	Philips 飞利浦	Philips
BF820	SILICON EPITAXIAL TRANSISTORS SILICON EPITAXIAL TRANSISTORS N–P–N transistors SOT-23 Formed SMD Package	TEL 东电电子	TEL
BF820	NPN High-Voltage Transistors Features ● Low current (max. 50 mA) ● High voltage (max. 300 V).	KEXIN 科信电子	KEXIN
BF820-Q	NPN high voltage transistor 1. General description NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BF821-Q 2. Features and benefits • Low current (max. 50 mA) • High voltage (max. 300 V) • Qualified according to AEC-Q101 and recommended for use in automotive	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
BF820W	NPN high-voltage transistors DESCRIPTION NPN high-voltage transistor in a SOT323 plastic package. FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony and professional communication equipment.	Philips 飞利浦	Philips
BF820W	NPN high-voltage transistor	ETC 知名厂家	ETC
BF820W	NPN High-Voltage Transistor Features ● Low current (max. 50 mA) ● High voltage (max. 300 V).	KEXIN 科信电子	KEXIN
BF820W	NPN high-voltage transistor FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V). APPLICATIONS •Telephony and professional communication equipment. DESCRIPTION NPN high-voltage transistor in a SOT323 plastic package.	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
BF821	PNP high-voltage transistors DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BF820, BF822. FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony and professional communication equipment.	Philips 飞利浦	Philips
BF821	Small Signal Transistors (PNP) FEATURES ◆ PNP Silicon Epitaxial Planar Transistors especially suited for application in classB video output stages of TV receivers and monitors. ◆ As complementary types, the NPN transistors BF820 and BF822 are recommended.	GE GE Industrial Company	GE
BF821	Surface mount Si-Epitaxial PlanarTransistors Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled	Diotec 德欧泰克	Diotec
BF821	PNP High-Voltage Transistors Features ● Low current (max. 50 mA) ● High voltage (max. 300 V).	KEXIN 科信电子	KEXIN
BF821	PNP high-voltage transistors	ETC 知名厂家	ETC
BF821	SILICON EPITAXIAL TRANSISTORS SILICON EPITAXIAL TRANSISTORS P–N–P transistors SOT-23 Formed SMD Package	CDIL	CDIL
BF821	Silicon PNP transistor in a SOT-23 Plastic Package Description Silicon PNP transistor in a SOT-23 Plastic Package. Features Low current, high voltage. Applications Telephony and professional communication equipment.	FOSHAN 蓝箭电子	FOSHAN
BF821	SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Low current (max.-50 mA) ● High voltage (max.-300V) ● Telephony and professional communication equipment.	JIANGSU 长电科技	JIANGSU
BF821	SOT-23 Plastic-Encapsulate Transistors FEATURES Low current (max.-50 mA) High voltage (max.-300V) Telephony and professional communication equipment.	DGNJDZ 南晶电子	DGNJDZ
BF821	PNP high-voltage transistors FEATURES •Low current (max. 50 mA) •High voltage (max. 300 V). APPLICATIONS •Telephony and professional communication equipment. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BF820, BF822.	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
BF821	SILICON EPITAXIAL TRANSISTORS SILICON EPITAXIAL TRANSISTORS P–N–P transistors SOT-23 Formed SMD Package	TEL 东电电子	TEL
BF822	TRANSISTOR (NPN) FEATURES ● Low current (max.50 mA) ● High voltage (max.300V) ● Telephony and professional communication equipment.	HTSEMI 金誉半导体	HTSEMI
BF822	SOT-23 Plastic-Encapsulate Transistors FEATURES Low current (max.50 mA) High voltage (max.300V) Telephony and professional communication equipment.	DGNJDZ 南晶电子	DGNJDZ
BF822	SILICON EPITAXIAL TRANSISTORS SILICON EPITAXIAL TRANSISTORS N–P–N transistors SOT-23 Formed SMD Package	CDIL	CDIL
BF822	SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Low current (max.50 mA) ● High voltage (max.300V) ● Telephony and professional communication equipment.	JIANGSU 长电科技	JIANGSU
BF822	NPN high voltage transistor 1. General description NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BF823 2. Features and benefits • Low current (max. 50 mA) • High voltage (max. 300 V) 3. Applications • Telephony and professional communication equipment	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
BF822	NPN high-voltage transistors DESCRIPTION NPN high-voltage transistor in a SOT23 plastic package. PNP complements: BF821; BF823. FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony and professional communication equipment.	Philips 飞利浦	Philips
BF822	Small Signal Transistors (NPN) FEATURES ◆ NPN Silicon Epitaxial Planar Transistors especially suited for application in class-B video output stages of TV receivers and monitors. ◆ As complementary types, the PNP transistors BF821 and BF823 are recommended.	GE GE Industrial Company	GE
BF822	Surface mount Si-Epitaxial PlanarTransistors Surface mount Si-Epitaxial PlanarTransistors • Power dissipation – 1.5 W • Plastic case SOT-223 • Weight approx. – 0.04 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled	Diotec 德欧泰克	Diotec
BF822	Surface mount Si-Epitaxial PlanarTransistors Surface mount Si-Epitaxial PlanarTransistors • Power dissipation – 1.5 W • Plastic case SOT-223 • Weight approx. – 0.04 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled	Diotec 德欧泰克	Diotec
BF822	NPN General Purpose Amplifier FEATURES ● Low current(max.50mA). ● High voltage(max.300V). APPLICATIONS ● Telephony and professional communication equipment.	BILIN 银河微电	BILIN
BF822	NPN High-Voltage Transistors Features ● Low current (max. 50 mA) ● High voltage (max. 300 V).	KEXIN 科信电子	KEXIN
BF822	NPN high-voltage transistors	ETC 知名厂家	ETC
BF822-Q	NPN high voltage transistor 1. General description NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BF823-Q 2. Features and benefits • Low current (max. 50 mA) • High voltage (max. 300 V) • Qualified according to AEC-Q101 and recommended for use in automotive	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
BF822W	NPN high-voltage transistors DESCRIPTION NPN high-voltage transistor in a SOT323 plastic package. FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony and professional communication equipment.	Philips 飞利浦	Philips
BF822W	NPN High-Voltage Transistor Features ● Low current (max. 50 mA) ● High voltage (max. 250 V).	KEXIN 科信电子	KEXIN
BF823	Small Signal Transistors (PNP) FEATURES ◆ PNP Silicon Epitaxial Planar Transistors especially suited for application in classB video output stages of TV receivers and monitors. ◆ As complementary types, the NPN transistors BF820 and BF822 are recommended.	GE GE Industrial Company	GE
BF823	Surface mount Si-Epitaxial PlanarTransistors Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled	Diotec 德欧泰克	Diotec
BF823	PNP high-voltage transistors	ETC 知名厂家	ETC
BF823	PNP high-voltage transistors DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BF820, BF822. FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony and professional communication equipment.	Philips 飞利浦	Philips
BF823	PNP High-Voltage Transistors Features ● Low current (max. 50 mA) ● High voltage (max. 300 V).	KEXIN 科信电子	KEXIN
BF823	SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Low current (max.-50 mA) ● High voltage (max.-300V) ● Telephony and professional communication equipment.	JIANGSU 长电科技	JIANGSU

BF8产品属性

类型
描述
型号
BF8
制造商
PEPPERL+FUCHS
功能描述
SENSOR MOUNTING BRACKET, For Use
With
8mm Cylindrical Sensor, Accessory
Type
Mou
制造商
PEPPERL+FUCHS
功能描述
SENSOR MOUNTING BRACKET, For Use
With
8mm Cylindrical Sensor, Accessory
Type
Mounting Flange,
Material
Polybutylene Terephthalate and Polyamide , RoHS
Compliant
Yes
制造商
PEPPERL+FUCHS
功能描述
Mount bracket for barrel type M8 sensor

BF8供应商更多...

更新时间：2025-8-9 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科芯源微电子有限公司	BF824W	NEXPERIA/安世	23+	SOT-323	100586	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
中天科工半导体（深圳）有限公司	BF823	NEXPERIA/安世	25+	SOT-23	32000	NEXPERIA/安世全新特价BF823即刻询购立享优惠#长期有货	询价
深圳市益百分电子有限公司	BF862	NEXPERIA/安世	20+	NA	70779		询价
深圳市航润创能电子集团有限公司	BF824	NEXPERIA/安世	21+	SOT-23	15000	NXP现货专家/原装	询价
深圳市汇莱威科技有限公司	BF824W	恩XP	24+	SOT-323	504233	免费送样原盒原包现货一手渠道联系	询价
深圳市得捷芯城科技有限公司	BF821	恩XP	24+	N/A	30027	原厂可订货,技术支持,直接渠道。可签保供合同	询价
深圳市华斯顿科技有限公司	BF812	PHI	25+23+	TO-89	29377	绝对原装正品全新进口深圳现货	询价
深圳市坤融电子科技有限公司	BF821	恩XP	24+	SOT23	8950	BOM配单专家,发货快,价格低	询价
深圳市一线半导体有限公司	BF812	飞利蒲	24+	TO-89	3456		询价
深圳市科恒伟业电子有限公司	BF862	恩XP	21+	SOT23	9800	只做原装正品假一赔十!正规渠道订货!	询价

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BF8晶体管资料

BF8价格

BF8产品属性

BF8供应商更多...

BF8芯片相关品牌

BF8规格书下载地址

BF8参数引脚图相关

BF8数据表相关新闻

BFC233920474

BE-A301

BF7612CM28，40k现货，批次21+

BF7612CM28，BYD，40K，21+

BF862215

BF998，现货销售，只售原装，兴中扬电子

DdatasheetPDF页码索引