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BF8晶体管资料
BF819别名：BF819三极管、BF819晶体管、BF819晶体三极管
BF819生产厂家：
BF819制作材料：Si-NPN
BF819性质：视频输出 （Vid）_功率放大 （L）_电视 （TV）
BF819封装形式：直插封装
BF819极限工作电压：300V
BF819最大电流允许值：0.1A
BF819最大工作频率：<1MHZ或未知
BF819引脚数：3
BF819最大耗散功率：6W
BF819放大倍数：
BF819图片代号：A-83
BF819vtest：300
BF819htest：999900
- BF819atest：.1
BF819wtest：6
BF819代换 BF819用什么型号代替：BF617,BF859,BF880,BF881,MJE340,
BF8价格
参考价格：￥71.7845
型号：BF8100-UVC 品牌：J.K.L. 备注：这里有BF8多少钱，2024年最近7天走势，今日出价，今日竞价，BF8批发/采购报价，BF8行情走势销售排行榜，BF8报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BF8 | Mounting flange 文件：256.23 Kbytes Page：1 Pages | PFBeijiafu (Beijing) Process Automation Control Equipment Co., Ltd 倍加福（北京）过程自动化倍加福（北京）过程自动化控制设备有限公司 |  |   |
Discrete Semiconductors DiscretsSemiconductors FETsForVHFAmplifiersandMixers ForLowNoiseAmplifiers Lowleakage/NoiseCurrent DualGateMosfets(NChannelDepletion) Lowleakge | AMMSEMI American Microsemiconductor |  | | |
Discrete Semiconductors DiscretsSemiconductors FETsForVHFAmplifiersandMixers ForLowNoiseAmplifiers Lowleakage/NoiseCurrent DualGateMosfets(NChannelDepletion) Lowleakge | AMMSEMI American Microsemiconductor | | | |
Discrete Semiconductors DiscretsSemiconductors FETsForVHFAmplifiersandMixers ForLowNoiseAmplifiers Lowleakage/NoiseCurrent DualGateMosfets(NChannelDepletion) Lowleakge | AMMSEMI American Microsemiconductor | | | |
Discrete Semiconductors DiscretsSemiconductors FETsForVHFAmplifiersandMixers ForLowNoiseAmplifiers Lowleakage/NoiseCurrent DualGateMosfets(NChannelDepletion) Lowleakge | AMMSEMI American Microsemiconductor | | | |
Discrete Semiconductors DiscretsSemiconductors FETsForVHFAmplifiersandMixers ForLowNoiseAmplifiers Lowleakage/NoiseCurrent DualGateMosfets(NChannelDepletion) Lowleakge | AMMSEMI American Microsemiconductor | | | |
Discrete Semiconductors DiscretsSemiconductors FETsForVHFAmplifiersandMixers ForLowNoiseAmplifiers Lowleakage/NoiseCurrent DualGateMosfets(NChannelDepletion) Lowleakge | AMMSEMI American Microsemiconductor | | | |
Discrete Semiconductors DiscretsSemiconductors FETsForVHFAmplifiersandMixers ForLowNoiseAmplifiers Lowleakage/NoiseCurrent DualGateMosfets(NChannelDepletion) Lowleakge | AMMSEMI American Microsemiconductor | | | |
NPN high-voltage transistor DESCRIPTION NPNhigh-voltagetransistorinaTO-202;SOT128Bplasticpackage. FEATURES •Lowcurrent(max.100mA) •Highvoltage(max.250V). APPLICATIONS •Driverforalineoutputtransistorincolourtelevisionreceivers. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  | | |
Surface mount Si-Epitaxial PlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation–1.5W •PlasticcaseSOT-223 •Weightapprox.–0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 |  | | |
NPN General Purpose Amplifier FEATURES ●Lowcurrent(max.50mA). ●Highvoltage(max.300V). APPLICATIONS ●Telephonyandprofessionalcommunicationequipment. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 |  | | |
NPN high-voltage transistors DESCRIPTION NPNhigh-voltagetransistorinaSOT23plasticpackage. PNPcomplements:BF821;BF823. FEATURES •Lowcurrent(max.50mA) •Highvoltage(max.300V). APPLICATIONS •Telephonyandprofessionalcommunicationequipment. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | | |
NPN high-voltage transistors DESCRIPTION NPNhigh-voltagetransistorinaSOT23plasticpackage. PNPcomplements:BF821;BF823. FEATURES •Lowcurrent(max.50mA) •Highvoltage(max.300V). APPLICATIONS •Telephonyandprofessionalcommunicationequipment. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
SILICON EPITAXIAL TRANSISTORS SILICONEPITAXIALTRANSISTORS N–P–Ntransistors SOT-23FormedSMDPackage | TEL TRANSYS Electronics Limited |  | | |
NPN High-Voltage Transistors Features ●Lowcurrent(max.50mA) ●Highvoltage(max.300V). | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | | |
TRANSISTOR (NPN) FEATURES ●Lowcurrent(max.50mA) ●Highvoltage(max.300V) ●Telephonyandprofessionalcommunicationequipment. | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 |  | | |
SOT-23 Plastic-Encapsulate Transistors FEATURES Lowcurrent(max.50mA) Highvoltage(max.300V) Telephonyandprofessionalcommunicationequipment. | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 |  | | |
SOT-23 Plastic-Encapsulate Transistors TRANSISTOR(NPN) FEATURES ●Lowcurrent(max.50mA) ●Highvoltage(max.300V) ●Telephonyandprofessionalcommunicationequipment. | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd |  | | |
SILICON EPITAXIAL TRANSISTORS SILICONEPITAXIALTRANSISTORS N–P–Ntransistors SOT-23FormedSMDPackage | CDIL CDIL |  | | |
Silicon NPN transistor in a SOT-23 Plastic Package Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features Lowcurrent,highvoltage. Applications Telephonyandprofessionalcommunicationequipment | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 |  | | |
NPN high voltage transistor 1.Generaldescription NPNhigh-voltagetransistorinasmallSOT23Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:BF821 2.Featuresandbenefits •Lowcurrent(max.50mA) •Highvoltage(max.300V) 3.Applications •Telephonyandprofessionalcommunicationequipment | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | | |
Small Signal Transistors (NPN) FEATURES ◆NPNSiliconEpitaxialPlanarTransistors especiallysuitedforapplicationinclass-B videooutputstagesofTVreceiversand monitors. ◆Ascomplementarytypes,thePNPtransistors BF821andBF823arerecommended. | GE GE Industrial Company |  | | |
Surface mount Si-Epitaxial PlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation–1.5W •PlasticcaseSOT-223 •Weightapprox.–0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | | | |
NPN high voltage transistor 1.Generaldescription NPNhigh-voltagetransistorinasmallSOT23Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:BF821-Q 2.Featuresandbenefits •Lowcurrent(max.50mA) •Highvoltage(max.300V) •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotive | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
NPN high-voltage transistors DESCRIPTION NPNhigh-voltagetransistorinaSOT323plasticpackage. FEATURES •Lowcurrent(max.50mA) •Highvoltage(max.300V). APPLICATIONS •Telephonyandprofessionalcommunicationequipment. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
NPN high-voltage transistor DESCRIPTION NPNhigh-voltagetransistorinaSOT323plasticpackage. FEATURES •Lowcurrent(max.50mA) •Highvoltage(max.300V). APPLICATIONS •Telephonyandprofessionalcommunicationequipment. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
NPN High-Voltage Transistor Features ●Lowcurrent(max.50mA) ●Highvoltage(max.300V). | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
NPN high-voltage transistor FEATURES •Lowcurrent(max.50mA) •Highvoltage(max.300V). APPLICATIONS •Telephonyandprofessionalcommunicationequipment. DESCRIPTION NPNhigh-voltagetransistorinaSOT323plasticpackage. | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
PNP high-voltage transistors DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BF820,BF822. FEATURES •Lowcurrent(max.50mA) •Highvoltage(max.300V). APPLICATIONS •Telephonyandprofessionalcommunicationequipment. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
SILICON EPITAXIAL TRANSISTORS SILICONEPITAXIALTRANSISTORS P–N–Ptransistors SOT-23FormedSMDPackage | CDIL CDIL | | | |
Silicon PNP transistor in a SOT-23 Plastic Package Description SiliconPNPtransistorinaSOT-23PlasticPackage. Features Lowcurrent,highvoltage. Applications Telephonyandprofessionalcommunicationequipment. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | | | |
SOT-23 Plastic-Encapsulate Transistors TRANSISTOR(PNP) FEATURES ●Lowcurrent(max.-50mA) ●Highvoltage(max.-300V) ●Telephonyandprofessionalcommunicationequipment. | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | | | |
SOT-23 Plastic-Encapsulate Transistors FEATURES Lowcurrent(max.-50mA) Highvoltage(max.-300V) Telephonyandprofessionalcommunicationequipment. | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | | | |
PNP high-voltage transistors FEATURES •Lowcurrent(max.50mA) •Highvoltage(max.300V). APPLICATIONS •Telephonyandprofessionalcommunicationequipment. DESCRIPTION PNPtransistorinaSOT23plasticpackage.NPNcomplements:BF820,BF822. | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
PNP high-voltage transistors DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BF820,BF822. FEATURES •Lowcurrent(max.50mA) •Highvoltage(max.300V). APPLICATIONS •Telephonyandprofessionalcommunicationequipment. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Small Signal Transistors (PNP) FEATURES ◆PNPSiliconEpitaxialPlanarTransistorsespeciallysuitedforapplicationinclassBvideooutputstagesofTVreceiversandmonitors. ◆Ascomplementarytypes,theNPNtransistorsBF820andBF822arerecommended. | GE GE Industrial Company | | | |
Surface mount Si-Epitaxial PlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | | | |
SILICON EPITAXIAL TRANSISTORS SILICONEPITAXIALTRANSISTORS P–N–Ptransistors SOT-23FormedSMDPackage | TEL TRANSYS Electronics Limited | | | |
PNP High-Voltage Transistors Features ●Lowcurrent(max.50mA) ●Highvoltage(max.300V). | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
TRANSISTOR (NPN) FEATURES ●Lowcurrent(max.50mA) ●Highvoltage(max.300V) ●Telephonyandprofessionalcommunicationequipment. | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | | | |
SOT-23 Plastic-Encapsulate Transistors FEATURES Lowcurrent(max.50mA) Highvoltage(max.300V) Telephonyandprofessionalcommunicationequipment. | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | | | |
SILICON EPITAXIAL TRANSISTORS SILICONEPITAXIALTRANSISTORS N–P–Ntransistors SOT-23FormedSMDPackage | CDIL CDIL | | | |
SOT-23 Plastic-Encapsulate Transistors TRANSISTOR(NPN) FEATURES ●Lowcurrent(max.50mA) ●Highvoltage(max.300V) ●Telephonyandprofessionalcommunicationequipment. | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | | | |
NPN high-voltage transistors DESCRIPTION NPNhigh-voltagetransistorinaSOT23plasticpackage. PNPcomplements:BF821;BF823. FEATURES •Lowcurrent(max.50mA) •Highvoltage(max.300V). APPLICATIONS •Telephonyandprofessionalcommunicationequipment. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Small Signal Transistors (NPN) FEATURES ◆NPNSiliconEpitaxialPlanarTransistors especiallysuitedforapplicationinclass-B videooutputstagesofTVreceiversand monitors. ◆Ascomplementarytypes,thePNPtransistors BF821andBF823arerecommended. | GE GE Industrial Company | | | |
Surface mount Si-Epitaxial PlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation–1.5W •PlasticcaseSOT-223 •Weightapprox.–0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | | | |
Surface mount Si-Epitaxial PlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation–1.5W •PlasticcaseSOT-223 •Weightapprox.–0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | | | |
NPN General Purpose Amplifier FEATURES ●Lowcurrent(max.50mA). ●Highvoltage(max.300V). APPLICATIONS ●Telephonyandprofessionalcommunicationequipment. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | | | |
NPN High-Voltage Transistors Features ●Lowcurrent(max.50mA) ●Highvoltage(max.300V). | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
NPN high-voltage transistors DESCRIPTION NPNhigh-voltagetransistorinaSOT23plasticpackage. PNPcomplements:BF821;BF823. FEATURES •Lowcurrent(max.50mA) •Highvoltage(max.300V). APPLICATIONS •Telephonyandprofessionalcommunicationequipment. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
NPN high voltage transistor 1.Generaldescription NPNhigh-voltagetransistorinasmallSOT23Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:BF823 2.Featuresandbenefits •Lowcurrent(max.50mA) •Highvoltage(max.300V) 3.Applications •Telephonyandprofessionalcommunicationequipment | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
NPN high voltage transistor 1.Generaldescription NPNhigh-voltagetransistorinasmallSOT23Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:BF823-Q 2.Featuresandbenefits •Lowcurrent(max.50mA) •Highvoltage(max.300V) •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotive | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
NPN high-voltage transistors DESCRIPTION NPNhigh-voltagetransistorinaSOT323plasticpackage. FEATURES •Lowcurrent(max.50mA) •Highvoltage(max.300V). APPLICATIONS •Telephonyandprofessionalcommunicationequipment. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
NPN High-Voltage Transistor Features ●Lowcurrent(max.50mA) ●Highvoltage(max.250V). | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
Small Signal Transistors (PNP) FEATURES ◆PNPSiliconEpitaxialPlanarTransistorsespeciallysuitedforapplicationinclassBvideooutputstagesofTVreceiversandmonitors. ◆Ascomplementarytypes,theNPNtransistorsBF820andBF822arerecommended. | GE GE Industrial Company | | | |
Surface mount Si-Epitaxial PlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | | | |
PNP high-voltage transistors DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BF820,BF822. FEATURES •Lowcurrent(max.50mA) •Highvoltage(max.300V). APPLICATIONS •Telephonyandprofessionalcommunicationequipment. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
PNP high-voltage transistors DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BF820,BF822. FEATURES •Lowcurrent(max.50mA) •Highvoltage(max.300V). APPLICATIONS •Telephonyandprofessionalcommunicationequipment. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
PNP High-Voltage Transistors Features ●Lowcurrent(max.50mA) ●Highvoltage(max.300V). | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
SOT-23 Plastic-Encapsulate Transistors TRANSISTOR(PNP) FEATURES ●Lowcurrent(max.-50mA) ●Highvoltage(max.-300V) ●Telephonyandprofessionalcommunicationequipment. | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | | |
BF8产品属性
- 类型
描述
- 型号
BF8
- 制造商
PEPPERL+FUCHS
- 功能描述
SENSOR MOUNTING BRACKET, For Use
- With
8mm Cylindrical Sensor, Accessory
- Type
Mou
- 制造商
PEPPERL+FUCHS
- 功能描述
SENSOR MOUNTING BRACKET, For Use
- With
8mm Cylindrical Sensor, Accessory
- Type
Mounting Flange,
- Material
Polybutylene Terephthalate and Polyamide , RoHS
- Compliant
Yes
- 制造商
PEPPERL+FUCHS
- 功能描述
Mount bracket for barrel type M8 sensor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
23+ |
SOT-323 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
NXP |
21+ |
SOT23 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
INFINEON/英飞凌 |
21+23+ |
SOT343 |
70000 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
Nexperia/安世 |
21+ |
SOT-23 |
30000 |
十年信誉,只做原装,有挂就有现货! |
|||
NEXPERIA/安世 |
21+ |
SOT-23 |
600000 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
|||
NXP/恩智浦 |
22+ |
BGA |
5846 |
全新原装正品 现货 优势供应 |
|||
NXP/恩智浦 |
21+ |
SOT323 |
9852 |
只做原装正品假一赔十!正规渠道订货! |
|||
NEXPERIA/安世 |
21+ |
SOT-23 |
15000 |
NXP现货专家/原装 |
|||
CJ/长晶 |
24+ |
SOT-23 |
30000 |
长晶全系列二三极管原装优势供应,欢迎询价 |
|||
NEXPERIA/安世 |
21+ |
SOT-23-3 |
60000 |
绝对原装正品现货,假一罚十 |
BF8芯片相关品牌
BF8规格书下载地址
BF8参数引脚图相关
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2020-8-5BF998，现货销售，只售原装，兴中扬电子
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2019-11-30
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