GaAs FET (N-channel dual-gate GaAs MES FET)

Features ● N-channel dual-gate GaAs MES FET ● Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners ● Low noise ● High gain ● Low input capacitance

Integrated Circuit Dual Doubly Balanced Chroma Demodulator with RGB Matrix and Chroma Driver Stages

Features: • Luminance Input Provided • Good Chroma Sensitivity–0.36Vp–p Input for 5Vp–p Output • Low Differential Output DC Offset Voltage–0.6V Max • DC Temperature Stability –3mV/°C Typ • Negligible Change in Output Voltage Swing and Varying 3.58MHz Reference Input Signal • High

PIN diode

Features 1) Multiple diodes in one small surface mount package. (UMD3, SMD3) 2) Low high-frequency forward resistance (rF) / low capacitance (CT). 3) High reliability. Applications VHF / UHF band variable attenuators and AGC

PIN diode

Features 1) Multiple diodes in one small surface mount package. (UMD3, SMD3) 2) Low high-frequency forward resistance (rF) / low capacitance (CT). 3) High reliability. Applications VHF / UHF band variable attenuators and AGC

PIN diode

Features 1) Multiple diodes in one small surface mount package. (UMD3, SMD3) 2) Low high-frequency forward resistance (rF) / low capacitance (CT). 3) High reliability. Applications VHF / UHF band variable attenuators and AGC