N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These feat

RF Manual 16th edition

N沟道硅FET

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：RF MOSFET N-CHANNEL JFET 20V 100 分立半导体产品 晶体管 - JFET

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：托盘 描述：RF MOSFET N-CH JFET 10V TO236AB 分立半导体产品 晶体管 - FET，MOSFET - 射频

N-channel silicon field-effect transistors

文件：40.31 Kbytes Page：7 Pages

N-channel silicon field-effect transistors

文件：40.31 Kbytes Page：7 Pages

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Large power dissipation: PD = 1 W • Zener voltage VZ: 4.7 V to 51 V • Zener voltage allowable deviation: 10 • Auto mounting possible

POWER RECTIFIERS(5.0A,500-1000V)

Surface Mount Ultrafast Power Rectifiers ULTRA FAST POWER RECTIFIERS 5.0 AMPERES 500 -- 1000 VOLTS

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE- 20 to 100 Volts CURRENT- 5.0 Amperes)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier. majority carrier conduction • Low power loss,high efficiency • High surge capacity • For

POWER RECTIFIERS(5.0A,500-1000V)

ULTRA FAST RECTIFIERS 5.0 AMPERES 500-1000 VOLTS

SCHOTTKY BARRIER RECTIFIERS(5.0A,70-100V)

Surface Mount Schkttky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS 5.0 AMPERES 70 - 100 VOLTS