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BF5晶体管资料

  • BF500别名：BF500三极管、BF500晶体管、BF500晶体三极管

  • BF500生产厂家：德国电子元件股份公司

  • BF500制作材料：Si-PNP

  • BF500性质：甚高频 （VHF）_前置放大 （V）_混频 （M）

  • BF500封装形式：直插封装

  • BF500极限工作电压：

  • BF500最大电流允许值：

  • BF500最大工作频率：400MHZ

  • BF500引脚数：3

  • BF500最大耗散功率：

  • BF500放大倍数：

  • BF500图片代号：C-62

  • BF500vtest：0

  • BF500htest：400000000

  • BF500atest：0

  • BF500wtest：0

  • BF500代换 BF500用什么型号代替：BF324,BF414,BF450,BF451,BF506,BF509,BF914,3CG122C,

BF5价格

参考价格：￥0.8211

型号：BF510,215 品牌：NXP 备注：这里有BF5多少钱，2024年最近7天走势，今日出价，今日竞价，BF5批发/采购报价，BF5行情走势销售排行榜，BF5报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BF5

Mounting flange

文件：524.96 Kbytes Page：1 Pages

PFBeijiafu (Beijing) Process Automation Control Equipment Co., Ltd

倍加福（北京）过程自动化倍加福（北京）过程自动化控制设备有限公司

PF
BF502

NPN SILICON RF TRANSISTOR

NPNSiliconRFTransistor

SIEMENS

Siemens Ltd

SIEMENS
BF5020

Silicon N-Channel MOSFET Tetrode

SiliconN-ChannelMOSFETTetrode •LownoisegaincontrolledinputstagesofUHF-andVHF-tunerswith3Vupto5Vsupplyvoltage •Integratedgateprotectiondiodes •Excellentnoisefigure •Highgain,highforwardtransadmittance •Improvedcrossmodulationatgainreduction •Pb-free

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BF5020R

Silicon N-Channel MOSFET Tetrode

SiliconN-ChannelMOSFETTetrode •LownoisegaincontrolledinputstagesofUHF-andVHF-tunerswith3Vupto5Vsupplyvoltage •Integratedgateprotectiondiodes •Excellentnoisefigure •Highgain,highforwardtransadmittance •Improvedcrossmodulationatgainreduction •Pb-free

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BF5020W

Silicon N-Channel MOSFET Tetrode

SiliconN-ChannelMOSFETTetrode •LownoisegaincontrolledinputstagesofUHF-andVHF-tunerswith3Vupto5Vsupplyvoltage •Integratedgateprotectiondiodes •Excellentnoisefigure •Highgain,highforwardtransadmittance •Improvedcrossmodulationatgainreduction •Pb-free

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BF5020WE6327

Silicon N-Channel MOSFET Tetrode

SiliconN-ChannelMOSFETTetrode •LownoisegaincontrolledinputstagesofUHF-andVHF-tunerswith3Vupto5Vsupplyvoltage •Integratedgateprotectiondiodes •Excellentnoisefigure •Highgain,highforwardtransadmittance •Improvedcrossmodulationatgainreduction •Pb-free

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BF503

NPN SILICON RF TRANSISTOR

NPNSiliconRFTransistor

SIEMENS

Siemens Ltd

SIEMENS
BF5030W

Silicon N-Channel MOSFET Tetrode

SiliconN-ChannelMOSFETTetrode •DesignedforinputstagesofUHF-andVHF-tunerswithAGCfunction •Supporting5Voperationsandpowersaving3Voperations •IntegratedESDgateprotectiondiodes •Verylownoisefigure •Highgain,highforwardtransadmittance •Verygoodcrossmodula

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BF505

NPN SILICON RF TRANSISTOR

NPNSiliconRFTransistor BF505isanNPNsiliconplanarRFtransistorinTO92plasticpackage(10A3DIN41868). ThetransistorisparticularlyintendedforuseinVHFamplifiersincommonemitterconfiguration,VHFmixersandVHF/UHFoscillators.

SIEMENS

Siemens Ltd

SIEMENS
BF506

PNP Silicon RF Transistor (For VHF mixer and oscillator stages)

PNPSiliconRFTransistor ●ForVHFmixerandoscillatorstages

SIEMENS

Siemens Ltd

SIEMENS
BF506

SILICON PLANAR PNP

VHPOSCILLATORMIXER TheBF506isasiliconplanarepitaxialPNPtransistorinJedecTO-92plasticpackage.ItisintendedforuseasmixerandoscillatorintheVHPrange.However,itmayalsobeusedasnotcontrolledpreamplifieratlownoise.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
BF507

NPN SILICON RF TRANSISTOR

NPNSiliconRFTransistor BF507isanNPNsiliconplanarRFtransistorinTO92plasticpackage(10A3DIN41686). ThetransistorisparticularlyintendedforuseinVHFamplifiers,VHFmixersandVHF/UHFoscillators.

SIEMENS

Siemens Ltd

SIEMENS
BF509

Silicon PNP RF Transistor

Feature *Highpowergain *Lownoisefigure *Highreverseattenuation

TFUNKVishay Telefunken

威世威世（VISHAY）集团

TFUNK
BF510

N-channel silicon field-effect transistors

DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsintheminiatureplasticenvelopeintendedforapplicationsuptothev.h.f.rangeinhybridthickandthin-filmcircuits.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thesefeat

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BF510

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF511

N-channel silicon field-effect transistors

DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsintheminiatureplasticenvelopeintendedforapplicationsuptothev.h.f.rangeinhybridthickandthin-filmcircuits.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thesefeat

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BF511

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF512

N-channel silicon field-effect transistors

DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsintheminiatureplasticenvelopeintendedforapplicationsuptothev.h.f.rangeinhybridthickandthin-filmcircuits.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thesefeat

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BF512

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF512F

Blackfin Embedded Processor

GENERALDESCRIPTION TheADSP-BF512/ADSP-BF512F,ADSP-BF514/ADSPBF514F,ADSP-BF516/ADSP-BF516F,ADSP-BF518/ADSPBF518FprocessorsaremembersoftheBlackfin®familyofproducts,incorporatingtheAnalogDevices/IntelMicroSignalArchitecture(MSA).Blackfinprocessorscombineadual-MACstate-of-

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
BF512F

Blackfin Embedded Processor

GENERALDESCRIPTION TheADSP-BF512/ADSP-BF512F,ADSP-BF514/ADSPBF514F,ADSP-BF516/ADSP-BF516F,ADSP-BF518/ADSPBF518FprocessorsaremembersoftheBlackfin®familyofproducts,incorporatingtheAnalogDevices/IntelMicroSignalArchitecture(MSA).Blackfinprocessorscombineadual-MACstate-of-

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
BF513

N-channel silicon field-effect transistors

DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsintheminiatureplasticenvelopeintendedforapplicationsuptothev.h.f.rangeinhybridthickandthin-filmcircuits.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thesefeat

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BF513

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF514

Blackfin Embedded Processor

GENERALDESCRIPTION TheADSP-BF512/ADSP-BF512F,ADSP-BF514/ADSPBF514F,ADSP-BF516/ADSP-BF516F,ADSP-BF518/ADSPBF518FprocessorsaremembersoftheBlackfin®familyofproducts,incorporatingtheAnalogDevices/IntelMicroSignalArchitecture(MSA).Blackfinprocessorscombineadual-MACstate-of-

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
BF514

Blackfin Embedded Processor

GENERALDESCRIPTION TheADSP-BF512/ADSP-BF512F,ADSP-BF514/ADSPBF514F,ADSP-BF516/ADSP-BF516F,ADSP-BF518/ADSPBF518FprocessorsaremembersoftheBlackfin®familyofproducts,incorporatingtheAnalogDevices/IntelMicroSignalArchitecture(MSA).Blackfinprocessorscombineadual-MACstate-of-

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
BF514F

Blackfin Embedded Processor

GENERALDESCRIPTION TheADSP-BF512/ADSP-BF512F,ADSP-BF514/ADSPBF514F,ADSP-BF516/ADSP-BF516F,ADSP-BF518/ADSPBF518FprocessorsaremembersoftheBlackfin®familyofproducts,incorporatingtheAnalogDevices/IntelMicroSignalArchitecture(MSA).Blackfinprocessorscombineadual-MACstate-of-

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
BF514F

Blackfin Embedded Processor

GENERALDESCRIPTION TheADSP-BF512/ADSP-BF512F,ADSP-BF514/ADSPBF514F,ADSP-BF516/ADSP-BF516F,ADSP-BF518/ADSPBF518FprocessorsaremembersoftheBlackfin®familyofproducts,incorporatingtheAnalogDevices/IntelMicroSignalArchitecture(MSA).Blackfinprocessorscombineadual-MACstate-of-

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
BF516

Blackfin Embedded Processor

GENERALDESCRIPTION TheADSP-BF512/ADSP-BF512F,ADSP-BF514/ADSPBF514F,ADSP-BF516/ADSP-BF516F,ADSP-BF518/ADSPBF518FprocessorsaremembersoftheBlackfin®familyofproducts,incorporatingtheAnalogDevices/IntelMicroSignalArchitecture(MSA).Blackfinprocessorscombineadual-MACstate-of-

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
BF516

Blackfin Embedded Processor

GENERALDESCRIPTION TheADSP-BF512/ADSP-BF512F,ADSP-BF514/ADSPBF514F,ADSP-BF516/ADSP-BF516F,ADSP-BF518/ADSPBF518FprocessorsaremembersoftheBlackfin®familyofproducts,incorporatingtheAnalogDevices/IntelMicroSignalArchitecture(MSA).Blackfinprocessorscombineadual-MACstate-of-

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
BF516F

Blackfin Embedded Processor

GENERALDESCRIPTION TheADSP-BF512/ADSP-BF512F,ADSP-BF514/ADSPBF514F,ADSP-BF516/ADSP-BF516F,ADSP-BF518/ADSPBF518FprocessorsaremembersoftheBlackfin®familyofproducts,incorporatingtheAnalogDevices/IntelMicroSignalArchitecture(MSA).Blackfinprocessorscombineadual-MACstate-of-

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
BF516F

Blackfin Embedded Processor

GENERALDESCRIPTION TheADSP-BF512/ADSP-BF512F,ADSP-BF514/ADSPBF514F,ADSP-BF516/ADSP-BF516F,ADSP-BF518/ADSPBF518FprocessorsaremembersoftheBlackfin®familyofproducts,incorporatingtheAnalogDevices/IntelMicroSignalArchitecture(MSA).Blackfinprocessorscombineadual-MACstate-of-

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
BF517

NPN Silicon RF Transistor (For amplifier and oscillator applications in TV-tuners)

NPNSiliconRFTransistor •Foramplifierandoscillator applicationsinTV-tuners

SIEMENS

Siemens Ltd

SIEMENS
BF517

NPN Silicon RF Transistor

NPNSiliconRFTransistor •Foramplifierandoscillator applicationsinTV-tuners •Pb-free(RoHScompliant)package

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BF518

Blackfin Embedded Processor

GENERALDESCRIPTION TheADSP-BF512/ADSP-BF512F,ADSP-BF514/ADSPBF514F,ADSP-BF516/ADSP-BF516F,ADSP-BF518/ADSPBF518FprocessorsaremembersoftheBlackfin®familyofproducts,incorporatingtheAnalogDevices/IntelMicroSignalArchitecture(MSA).Blackfinprocessorscombineadual-MACstate-of-

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
BF518

Blackfin Embedded Processor

GENERALDESCRIPTION TheADSP-BF512/ADSP-BF512F,ADSP-BF514/ADSPBF514F,ADSP-BF516/ADSP-BF516F,ADSP-BF518/ADSPBF518FprocessorsaremembersoftheBlackfin®familyofproducts,incorporatingtheAnalogDevices/IntelMicroSignalArchitecture(MSA).Blackfinprocessorscombineadual-MACstate-of-

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
BF518F

Blackfin Embedded Processor

GENERALDESCRIPTION TheADSP-BF512/ADSP-BF512F,ADSP-BF514/ADSPBF514F,ADSP-BF516/ADSP-BF516F,ADSP-BF518/ADSPBF518FprocessorsaremembersoftheBlackfin®familyofproducts,incorporatingtheAnalogDevices/IntelMicroSignalArchitecture(MSA).Blackfinprocessorscombineadual-MACstate-of-

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
BF518F

Blackfin Embedded Processor

GENERALDESCRIPTION TheADSP-BF512/ADSP-BF512F,ADSP-BF514/ADSPBF514F,ADSP-BF516/ADSP-BF516F,ADSP-BF518/ADSPBF518FprocessorsaremembersoftheBlackfin®familyofproducts,incorporatingtheAnalogDevices/IntelMicroSignalArchitecture(MSA).Blackfinprocessorscombineadual-MACstate-of-

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
BF543

Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications)

●ForRFstagesupto300MHzpreferablyinFMapplications ●IDSS=4mA,gfs=12mS

SIEMENS

Siemens Ltd

SIEMENS
BF543

Silicon N-Channel MOSFET Triode

●Forhigh-frequencystagesupto300MHzpreferablyinFMapplications ●IDSS=4mA,gfs=12mS

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BF543

N-Channel MOS-Fieldeffect Triode, Depletion Mode

Features •Integratedgateprotectiondiode •Lowfeedbackcapacitance •Lownoisefigure •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications Highfrequencystagesupto300MHz.  

VishayVishay Siliconix

威世科技

Vishay
BF545A

N-channel silicon junction field-effect transistors

DESCRIPTION N-channelsymmetricalsiliconjunctionfield-effecttransistorsinaSOT23package. FEATURES •Lowleakagelevel(typ.500fA) •Highgain •Lowcut-offvoltage(max.2.2VforBF545A). APPLICATIONS •Impedanceconvertersine.g.electretmicrophonesandinfra-

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BF545A

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF545B

N-channel silicon junction field-effect transistors

DESCRIPTION N-channelsymmetricalsiliconjunctionfield-effecttransistorsinaSOT23package. FEATURES •Lowleakagelevel(typ.500fA) •Highgain •Lowcut-offvoltage(max.2.2VforBF545A). APPLICATIONS •Impedanceconvertersine.g.electretmicrophonesandinfra-

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BF545B

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF545C

N-channel silicon junction field-effect transistors

DESCRIPTION N-channelsymmetricalsiliconjunctionfield-effecttransistorsinaSOT23package. FEATURES •Lowleakagelevel(typ.500fA) •Highgain •Lowcut-offvoltage(max.2.2VforBF545A). APPLICATIONS •Impedanceconvertersine.g.electretmicrophonesandinfra-

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BF545C

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF547

NPN 1 GHz wideband transistor

FEATURES •Feedbackcapacitancetyp.1pF •Stableoscillatoroperation •Highcurrentgain •Goodthermalstability. APPLICATIONS •ItisintendedforVHFandUHFTV-tunerapplicationsandcanbeusedasamixerand/oroscillator.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BF547W

NPN 1 GHz wideband transistor

DESCRIPTION SiliconNPNtransistorinaplasticSOT323(S-mini)package.TheBF547WusesthesamecrystalastheSOT23version,BF547. FEATURES •Stableoscillatoroperation •Highcurrentgain •Goodthermalstability. APPLICATIONS Itisprimarilyintendedasamixer,oscillatorandIF

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BF550

PNP medium frequency transistor

DESCRIPTION PNPmediumfrequencytransistorinaSOT23plasticpackage. FEATURES •Lowcurrent(max.25mA) •Lowvoltage(max.40V). APPLICATIONS •Mediumfrequencyapplicationsinthickandthinfilmcircuits.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BF550

PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners)

PNPSiliconRFTransistor ●Forcommonemitteramplifierstagesupto300MHz ●FormixerapplicationsinAM/FMradiosandVHFTVtuners ●Lowfeedbackcapacitanceduetoshielddiffusion ●Controlledlowoutputconductance

SIEMENS

Siemens Ltd

SIEMENS
BF550

PNP medium frequency transistor

DESCRIPTION PNPmediumfrequencytransistorinaSOT23plasticpackage. FEATURES •Lowcurrent(max.25mA) •Lowvoltage(max.40V). APPLICATIONS •Mediumfrequencyapplicationsinthickandthinfilmcircuits.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF550

PNP Medium Frequency Transistor

Features ●Lowcurrent(max.25mA). ●Lowvoltage(max.40V).

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
BF550

nullPNP medium frequency transistor

FEATURES •Lowcurrent(max.25mA) •Lowvoltage(max.40V).

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BF554

NPN Silicon RF Transistor (For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits)

NPNSiliconRFTransistor ●Forgeneralsmall-signalRFapplicationsupto300MHzinamplifier,mixerandoscillatorcircuits

SIEMENS

Siemens Ltd

SIEMENS
BF554

Surface mount Si-Epitaxial PlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

Diotec
BF556A

N-channel silicon junction field-effect transistors

DESCRIPTION N-channelsymmetricalsiliconjunctionfield-effecttransistorsinaSOT23package. FEATURES •Lowleakagelevel(typ.500fA) •Highgain •Lowcut-offvoltage. APPLICATIONS •Impedanceconvertersine.g.electretmicrophonesand infra-reddetectors •VHFamplifiersinos

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BF556A

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF556B

N-channel silicon junction field-effect transistors

DESCRIPTION N-channelsymmetricalsiliconjunctionfield-effecttransistorsinaSOT23package. FEATURES •Lowleakagelevel(typ.500fA) •Highgain •Lowcut-offvoltage. APPLICATIONS •Impedanceconvertersine.g.electretmicrophonesand infra-reddetectors •VHFamplifiersinos

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BF556B

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF556C

N-channel silicon junction field-effect transistors

DESCRIPTION N-channelsymmetricalsiliconjunctionfield-effecttransistorsinaSOT23package. FEATURES •Lowleakagelevel(typ.500fA) •Highgain •Lowcut-offvoltage. APPLICATIONS •Impedanceconvertersine.g.electretmicrophonesand infra-reddetectors •VHFamplifiersinos

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

BF5产品属性

  • 类型

    描述

  • 型号

    BF5

  • 制造商

    OMRON Industrial Automation

  • 功能描述

    ELECTRODE HOLDER 5POLE STURDY

  • 制造商

    Omron Corporation

BF5供应商更多...

更新时间：2024-5-17 23:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
中天科工半导体（深圳）有限公司
BF502
MOT/PHI
专业铁帽
CAN4
67500
铁帽原装主营-可开原型号增税票
询价
深圳市科芯源微电子有限公司
BF556A
NXP/恩智浦
23+
SOT-23
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
深圳市明嘉莱科技有限公司
BF5030WH6327
INFINEON/英飞凌
24+
SOT343
159727
明嘉莱只做原装正品现货
询价
深圳市博浩通科技有限公司
BF-50.000MBE-T
TXCCORPORATION
23+
OSC50.000MHZ3.3VLVDSSMD
9000
专业晶体和振荡器代理,能提供更多数量
询价
深圳市英博尔电子有限公司
BF5885AM64
BYD/比亚迪
23+
QFN64
10000
全新、原装
询价
深圳市亿顺芯科技有限公司
BF5000A024
Lovato
2021+
标准接口
285000
专供连接器,军工合格供应商!
询价
深圳信泰电子器材有限公司
BF510
NXP
24+
SOT23
4860
十年信誉,只做全新原装正品现货,以优势说话 !!
询价
深圳市得捷芯城科技有限公司
BF569
Vishay(威世)
23+
标准封装
12048
原厂直销,大量现货库存,交期快。价格优,支持账期
询价
深圳市高捷芯城科技有限公司
BF550,235
Nexperia(安世)
23+
SOT-23(TO-236)
7957
原厂订货渠道,支持BOM配单一站式服务
询价
深圳市航宇科工半导体有限公司
BF570
NEXPERIA/安世
21+
SOT-23
600000
航宇科工半导体-中国航天科工集团战略合作伙伴!
询价

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