Mounting flange

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SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP

[FACON] singlephasemouldedbridges0,8Ampto1,5Amp singlephasemouldedbridges3Ato6A mouldedsinglephasebridges10Ato35A singlephasemouldedbridges10Ato50A mouldedsinglephasebridges25Ato50A

LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS

Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.

N-channel silicon field-effect transistors

DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks

LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS

Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.

N-channel silicon field-effect transistors

DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks

LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS

Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.

N-channel silicon field-effect transistors

DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks

LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS

Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.

N-channel silicon field-effect transistors

DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks

LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS

Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.

NPN Silicon RF Transistor (For low-noise, common base VHF and FM stages)

NPNSiliconRFTransistor ●Forlow-noise,commonbase VHFandFMstages

NPN high-voltage transistor

DESCRIPTION NPNhigh-voltagetransistorinaTO-126;SOT32plasticpackage. FEATURES •Lowcurrent(max.100mA) •Highvoltage(max.250V). APPLICATIONS •Driverforlineoutputtransistorsincolourtelevision receivers.

SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP

[FACON] singlephasemouldedbridges0,8Ampto1,5Amp singlephasemouldedbridges3Ato6A mouldedsinglephasebridges10Ato35A singlephasemouldedbridges10Ato50A mouldedsinglephasebridges25Ato50A

High Voltage Transistors(NPN)

HighVoltageTransistors NPNSilicon

High Voltage Transistors(NPN Silicon)

HighVoltageTransistors NPNSilicon

NPN high-voltage transistors

DESCRIPTION NPNtransistorsinaTO-92plasticpackage. PNPcomplements:BF421andBF423. FEATURES •Lowfeedbackcapacitance. APPLICATIONS •Class-Bvideooutputstagesincolourtelevisionand professionalmonitorequipment.

NPN Silicon Transistors With High Reverse Voltage (NPN Silicon Transistors With High Reverse Voltage)

●Highbreakdownvoltage ●Lowcollector-emittersaturationvoltage ●Lowcapacitance ●Complementarytypes:BF421,BF423(PNP)

SILICON NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE SWITCHING AND AMPLIFIER,COLOR TV CHROMA OUTPUT)

HIGHVOLTAGESWITCHINGANDAMPLIFIERAPPLICATION. COLORTVCHROMAOUTPUTAPPLICATIONS. FEATURES •HighVoltage:VCEO>300V •ComplementarytoBF421.

NPN/PNP HIGH VOLTAGE SILICON TRANSISTOR

BF420andBF421arecomplementaryNPN/PNPsiliconplanarepitaxialtransistor.Designedforhighvoltagevideoamplifiersincolourtelevisionreceiversincludinggriddriveandinstagesofhighvoltagelinedeflectioncircuits.

TRANSISTOR (NPN)

FEATURES ●Lowfeedbackcapacitance. ●NPNtransistorsinaTO-92plasticpackage. PNPcomplements:BF421andBF423 ●Class-Bvideooutputstagesincolour televisionandprofessionalmonitorequipment.

NPN SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS

NPNSILICONPLANAREPITAXIALHIGHVOLTAGEVIDEOTRANSISTORS DesignedForHighVoltageVideoAmplifierInTelevisionReceivers. TO-92PlasticPackage

SMALL SIGNAL NPN TRANSISTOR

■SILICONEPITAXIALPLANARNPNHIGHVOLTAGETRANSISTOR ■TO-92PACKAGESUITABLEFORTHROUGH-HOLEPCBASSEMBLY ■THEPNPCOMPLEMENTARYTYPEISBF421 APPLICATIONS ■VIDEOAMPLIFIERCIRCUITS(RGBCATHODECURRENTCONTROL) ■TELEPHONEWIRELINEINTERFACE(HOOKSWITCHES,DIALERCIRCUITS)

NPN high-voltage transistors

NPN Silicon Plastic-Encapsulate Transistor

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Capableof0.83WattsofPowerDissipation. •Collector-current0.1A •Collector-baseVoltage:BF420300V BF422250V •Operatingandstorag

TRANSISTOR (NPN)

FEATURES Powerdissipation PCM:0.83W(Tamb=25℃) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:BF420300V BF422250V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions SiliconNPNtransistorinaTO-92PlasticPackage. Features Highvoltage,complementarypairwithBF421. Applications Highvoltageswitchingandamplifier,colorTVchromeoutput.

Small Signal Transistors

FEATURES *NPNSiliconEpitaxialPlanarTransistorsespeciallysuitedforapplication inclass-BvideooutputstagesofTVreceiversand *Ascomplementarytypes,thePNPtransistorsBF421andBF423arerecommended

NPN SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS

DesignedForHighVoltageVideoAmplifierInTelevisionReceivers.

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES ●Lowfeedbackcapacitance. ●NPNtransistorsinaTO-92plasticpackage. PNPcomplements:BF421andBF423 ●Class-Bvideooutputstagesincolour televisionandprofessionalmonitorequipment.

NPN Epitaxial Planar Transistor

Description •NPNhighvoltagetransistorsinaTO-92plasticpackage. •ComplementarytoBF421A3/S. •Pb-freepackageisavailable Features •Lowfeedbackcapacitance. Applications •Class-Bvideooutputstagesincolortelevisionandprofessionalmonitorequipment.

NPN Epitaxial Planar Transistor

Description •NPNhighvoltagetransistorsinaTO-92plasticpackage. •ComplementarytoBF421A3/S. •Pb-freepackageisavailable Features •Lowfeedbackcapacitance. Applications •Class-Bvideooutputstagesincolortelevisionandprofessionalmonitorequipment.

SMALL SIGNAL NPN TRANSISTOR

■SILICONEPITAXIALPLANARNPNHIGHVOLTAGETRANSISTOR ■TO-92PACKAGESUITABLEFORTHROUGH-HOLEPCBASSEMBLY ■THEPNPCOMPLEMENTARYTYPEISBF421 APPLICATIONS ■VIDEOAMPLIFIERCIRCUITS(RGBCATHODECURRENTCONTROL) ■TELEPHONEWIRELINEINTERFACE(HOOKSWITCHES,DIALERCIRCUITS)

High Voltage Transistors(PNP)

HighVoltageTransistors PNPSilicon

High Voltage Transistors(PNP Silicon)

HighVoltageTransistors PNPSilicon

PNP high-voltage transistors

DESCRIPTION PNPtransistorsinaTO-92plasticpackage. NPNcomplements:BF420andBF422. FEATURES •Lowfeedbackcapacitance. APPLICATIONS •Class-Bvideooutputstagesincolourtelevisionandprofessionalmonitorequipment.

PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)

●Highbreakdownvoltage ●Lowcollector-emittersaturationvoltage ●Lowcapacitance ●Complementarytypes:BF420,BF422(NPN)

Small Signal Transistors (PNP)

FEATURES ♦PNPSiliconEpitaxialTransistors especiallysuitedforapplicationin class-BvideooutputstagesofTV receiversandmonitors. ♦Ascomplementarytypes,theNPNtransistors BF420andBF422arerecommended.

SILICON PNP TRIPLE DIFFUSED TYPE (HIGH VOLTAGE SWITCHING AND AMPLIFIER,COLOR TV CHROMA OUTPUT)

HIGHVOLTAGESWITCHINGANDAMPLIFIERAPPLICATION. COLORTVCHROMAOUTPUTAPPLICATIONS. FEATURES •HighVoltage:VCEO>-300V •ComplementarytoBF420.

PNP Silicon Plastic-Encapsulate Transistor

Features •HalogenFreeAvailableUponRequestByAddingSuffix-HF •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation) MaximumRatings@25°CUnlessOtherwiseSpecified

SMALL SIGNAL PNP TRANSISTOR

SMALLSIGNALPNPTRANSISTOR ■SILICONEPITAXIALPLANARPNPHIGHVOLTAGETRANSISTOR ■TO-92PACKAGESUITABLEFORTHROUGH-HOLEPCBASSEMBLY ■THENPNCOMPLEMENTARYTYPEISBF420 APPLICATIONS ■VIDEOAMPLIFIERCIRCUITS(RGBCATHODECURRENTCONTROL) ■TELEPHONEWIRELINEINTERFACE(HOOKSWITCHES,

PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS

PNPSILICONPLANAREPITAXIALHIGHVOLTAGEVIDEOTRANSISTORS HighVoltageVideoAmplifier

TO-92 Plastic-Encapsulate Transistors

FEATURES Powerdissipation PCM:0.625W（Tamb=25℃） Collectorcurrent ICM:-50mA Collector-basevoltage V(BR)CBO:BF421-300V BF423-250V Operatingandstoragejunctiontemperaturerange TJ，Tstg:-55

PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS

PNPSILICONPLANAREPITAXIALHIGHVOLTAGE VIDEOTRANSISTORS HighVoltageVideoAmplifier

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions SiliconPNPtransistorinaTO-92PlasticPackage. Features Highvoltage,complementarypairwithBF420. Applications Highvoltageswitchingandamplifier,colorTVchromeoutput.

TRANSISTOR (PNP)

FEATURES ●Lowfeedbackcapacitance. ●PNPtransistorsinaTO-92plasticpackage. NPNcomplements:BF420andBF422 ●Class-Bvideooutputstagesincolour televisionandprofessionalmonitorequipment.

SMALL SIGNAL PNP TRANSISTOR

SMALLSIGNALPNPTRANSISTOR ■SILICONEPITAXIALPLANARPNPHIGHVOLTAGETRANSISTOR ■TO-92PACKAGESUITABLEFORTHROUGH-HOLEPCBASSEMBLY ■THENPNCOMPLEMENTARYTYPEISBF420 APPLICATIONS ■VIDEOAMPLIFIERCIRCUITS(RGBCATHODECURRENTCONTROL) ■TELEPHONEWIRELINEINTERFACE(HOOKSWITCHES,

TRANSISTOR (PNP)

FEATURES Powerdissipation PCM:0.83W(Tamb=25℃) Collectorcurrent ICM:-100mA Collector-basevoltage V(BR)CBO:BF421-300V BF423-250V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55°Cto+150°

PNP Epitaxial Planar Transistor

Description •PNPhighvoltagetransistorsinaTO-92plasticpackage. •ComplementarytoBF420A3. Features •Lowfeedbackcapacitance. Applications •Class-Bvideooutputstagesincolortelevisionandprofessionalmonitorequipment.

SMALL SIGNAL PNP TRANSISTOR

SMALLSIGNALPNPTRANSISTOR ■SILICONEPITAXIALPLANARPNPHIGHVOLTAGETRANSISTOR ■TO-92PACKAGESUITABLEFORTHROUGH-HOLEPCBASSEMBLY ■THENPNCOMPLEMENTARYTYPEISBF420 APPLICATIONS ■VIDEOAMPLIFIERCIRCUITS(RGBCATHODECURRENTCONTROL) ■TELEPHONEWIRELINEINTERFACE(HOOKSWITCHES,

SMALL SIGNAL PNP TRANSISTOR

SMALLSIGNALPNPTRANSISTOR ■SILICONEPITAXIALPLANARPNPHIGHVOLTAGETRANSISTOR ■TO-92PACKAGESUITABLEFORTHROUGH-HOLEPCBASSEMBLY ■THENPNCOMPLEMENTARYTYPEISBF420 APPLICATIONS ■VIDEOAMPLIFIERCIRCUITS(RGBCATHODECURRENTCONTROL) ■TELEPHONEWIRELINEINTERFACE(HOOKSWITCHES,

PNP high-voltage transistors

DESCRIPTION PNPtransistorinaTO-92;SOT54plasticpackage.NPNcomplement:BF422L. FEATURES •Lowcurrent(max.50mA) •Highvoltage(max.300V) •Availablewithahigherpowerrating(830mW)undertypenumber:BF423. APPLICATIONS •Primarilyintendedfortelephonya

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

DesignedForHighVoltageVideoAmplifierInTelevisionReceivers.

HIGH VOLTAGE TRANSISTOR

HIGHVOLTAGETRANSISTOR FEATURES *Collector-EmitterVoltage:VCEO=250V. *ComplementarytoUTCBF423.

NPN SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS

NPNSILICONPLANAREPITAXIALHIGHVOLTAGEVIDEOTRANSISTORS DesignedForHighVoltageVideoAmplifierInTelevisionReceivers. TO-92PlasticPackage

High voltage application

Descriptions •Highvoltageapplication •Monitorequipmentapplication Features •Collector-Emittervoltage:VCEO=250V •ComplementarypairwithBF423

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description DesignedforvideoB-classpowerstagesinTVreceivers.

NPN high-voltage transistors

NPN Silicon Plastic-Encapsulate Transistor

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Capableof0.83WattsofPowerDissipation. •Collector-current0.1A •Collector-baseVoltage:BF420300V BF422250V •Operatingandstorag

Small Signal Transistors

FEATURES *NPNSiliconEpitaxialPlanarTransistorsespeciallysuitedforapplication inclass-BvideooutputstagesofTVreceiversand *Ascomplementarytypes,thePNPtransistorsBF421andBF423arerecommended