NPN SILICON HILGH VOLTAGE VIDEO TRANSISTORS

NPN SILICON HILGH VOLTAGE VIDEO TRANSISTORS Designed For High Voltage Video Amplifier in Television Receivers.

NPN HIGH VOLTAGE VIDEO AMPLIFIERS

NPN HIGH VOLTAGE VIDEO AMPLIFIERS THE BF391, BF392, BF393 ARE NPN SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO AMPLIFIERS IN TELEVISION RECEIVERS. THEY FEATURE 200V MINIMUM COLLECTOR-EMITTER BREAKDOWN VOLTAGE AND GOOD FREQUENCY CHARACTERISTICS.

NPN Silicon Planar High Voltage Transistors

DESCRIPTION These plastic encapsulated general purpose transistor* are designed for applications requiring high breakdown voltage and low capacitance. The E-line package is formed by Injection moulding a SILICONE plastic specially selected to provide a rugged one-piece encapsulation resistant to

NPN SILICON HILGH VOLTAGE VIDEO TRANSISTORS

NPN SILICON HILGH VOLTAGE VIDEO TRANSISTORS Designed For High Voltage Video Amplifier in Television Receivers.

PNP OUTPUT TRANSISTOR

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TO-92 Plastic Package Transistors (NPN)

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Phase Control SCR 490 Amperes Average 2400 Volts

Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermetic Packaging □

Phase Control SCR 490 Amperes Avg 1300-1800 Volts

Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermetic Packaging □

Phase Control SCR 490 Amperes Avg 1300-1800 Volts

Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermetic Packaging □

Silicon Complementary Transistors General Purpose

Description: The NTE390 (NPN) and NTE391 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications. Features: ● 10A Collector Current ● Low Leakage Current: ICEO = 0.7mA @ VCE = 60V ● Excellent DC Gain: hFE = 4

LM391 Audio Power Driver

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