| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BF254B | Electrical Characteristics 文件:51.22 Kbytes Page:1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
BF254B | Trans JFET N-CH 3-Pin TO-92 Bulk | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
N-channel enhancement mode vertical D-MOS transistors DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT54 (TO-92) variant package. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown • Low RDSon. APPLICATIONS • Line current interruptor in telephone sets • Relay, high-speed a | PHILIPS 飞利浦 | |||
P-channel enhancement mode vertical D-MOS transistor DESCRIPTION P-channel vertical D-MOS transistor in a TO-92 variant envelope and intended for use as a line current interruptor in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. | PHILIPS 飞利浦 | |||
P-channel enhancement mode vertical D-MOS transistor DESCRIPTION P-channel vertical D-MOS transistor in a TO-92 variant envelope and intended for use as a line current interruptor in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. | PHILIPS 飞利浦 | |||
MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes) FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o | PANJIT 強茂 | |||
Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A • Monolithic Construction wit | NTE |
BF254B产品属性
- 类型
描述
- Maximum Power Dissipation:
350mW
- Maximum Operating Temperature:
150°C
- Maximum Gate Source Voltage:
-30V
- Maximum Drain Gate Voltage:
30V
- Configuration:
Single
- Channel Type:
N
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
TO-92(TO-226) |
7734 |
样件支持,可原厂排单订货! |
|||
onsemi |
25+ |
TO-92(TO-226) |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
24+ |
TO-92 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
||||
MOTOROLA |
2026+ |
TO92 |
2490 |
原装正品 假一罚十! |
|||
MOT/ST/PH |
24+ |
CAN4 |
21322 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
ON |
23+ |
TO-226-3 |
760 |
正规渠道,只有原装! |
|||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
MOT |
25+23+ |
TO92 |
49534 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
SIEMEN |
24+ |
1151 |
|||||
25+ |
284 |
公司优势库存 热卖中! |
BF254B规格书下载地址
BF254B参数引脚图相关
- c901
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BF32F3
- BF32F1
- BF32E5
- BF32E3
- BF32E1
- BF32C5
- BF32C3
- BF32C1
- BF324
- BF314
- BF-301
- BF301
- BF25TC
- BF259MC
- BF259L
- BF259
- BF258DCSM
- BF258
- BF257DCSM
- BF257CSM4
- BF257CSM
- BF257
- BF256C_Q
- BF256C_J35Z
- BF256C
- BF256B_Q
- BF256B_J35Z
- BF256B
- BF256AG
- BF256A
- BF256
- BF255
- BF254-4
- BF254-3
- BF254
- BF253
- BF2520-B2R4CACT/LF
- BF2510D024
- BF2510A400
- BF2510A27760
- BF2510A230
- BF2510A110
- BF2510A04860
- BF250H
- BF250
- BF24S
- BF24P
- BF247C
- BF247B
- BF247A_Q
- BF247A_J35Z
- BF247A
- BF247
- BF246C
- BF246B
- BF246A
- BF246
- BF245C
- BF245B
- BF245A
- BF245
- BF244C
- BF244B
- BF244A
- BF241
- BF240
- BF231M
- BF224
- BF215
BF254B数据表相关新闻
BD9F500QUZ-E2
进口代理
2024-4-18BE-A301
BE-A301
2022-3-15BF7612CM28,40k现货,批次21+
BF7612CM28,40k现货,批次21+
2021-11-18BF7612CM28,BYD,40K,21+
BF7612CM28,BYD,40K,21+
2021-11-10BF862215
JFET - 25 V 射频结栅场效应晶体管(RF JFET)晶体管 , SMD/SMT 射频结栅场效应晶体管(RF JFET)晶体管 , JFET 射频结栅场效应晶体管(RF JFET)晶体管 , GaN SiC SMD/SMT 射频结栅场效应晶体管(RF JFET)晶体管 , JFET N-Channel 射频结栅场效应晶体管(RF JFET)晶体管 , MESFET 射
2020-8-5BD9F800 DC / DC降压开关稳压器BD9F800MUX-ZE2
ROHM Semiconductors的BD9F800是具有高速响应的恒定导通时间控制的DC / DC转换器
2020-6-9
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109