Silicon N-Channel MOSFET Tetrode

• For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)

• For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V

RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB

Silicon N-Channel MOSFET Tetrode

文件：118.38 Kbytes Page：11 Pages

Silicon N-Channel MOSFET Tetrode

• For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

Silicon N-Channel MOSFET Tetrode

• For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

Silicon N-Channel MOSFET Tetrode

• For low noise, high gain controlled input stages up to 1GHz\n• Operating voltage 5V\n• Pb-free (RoHS compliant) package1)\n• Qualified according AEC Q101

Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)

• For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V

Silicon N-Channel MOSFET Tetrode

文件：118.38 Kbytes Page：11 Pages

Silicon N-Channel MOSFET Tetrode

文件：118.38 Kbytes Page：11 Pages

封装/外壳：SOT-143R 包装：带 描述：MOSFET N-CH 8V 40MA SOT-143R 分立半导体产品 晶体管 - FET，MOSFET - 射频

Silicon N-Channel MOSFET Tetrode

文件：118.38 Kbytes Page：11 Pages

封装/外壳：SC-82A，SOT-343 包装：带 描述：MOSFET N-CH 8V 40MA SOT-343 分立半导体产品 晶体管 - FET，MOSFET - 射频

DECT 500 mW power amplifier

GENERAL DESCRIPTION The CGY2030M is a GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply. When power control is not required, it can be operated without negative supply voltage. FEATURES • Power Amplifier (PA) overall eff

Integrated Circuit High Voltage Segment Driver for Gas Discharge Tubes

Description: The NTE2030 is capable of driving 8 segments of a high voltage display tube with a constant output sink current, which can be adjusted by external program resistor, Rp. The program current is half that of output “ON” current. In the “OFF” state the outputs can tolerate more than 80

SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 20.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • For

ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 20.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • For

SCHOTTKY BARRIER RECTIFIERS(20A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara