Silicon N-Channel MOSFET Tetrode

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9 V • Integrated stabilized bias network

Silicon N-Channel MOSFET Tetrode for ...

Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network

Silicon N-Channel MOSFET Tetrode

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

Silicon N-Channel MOSFET Tetrode

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

Silicon N-Channel MOSFET Tetrode

Silicon N-Channel MOSFET Tetrode• For low noise, high gain controlled\n   input stage up to 1 GHz\n• Operating voltage 9 V\n• Integrated biasing network\n• Pb-free (RoHS compliant) package1)\n• Qualified according AEC Q101

丝印代码：JLs；Silicon N-Channel MOSFET Tetrode

For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network

RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand

Silicon N-Channel MOSFET Tetrode

文件：84.46 Kbytes Page：8 Pages

Silicon N-Channel MOSFET Tetrode

文件：84.46 Kbytes Page：8 Pages

封装/外壳：TO-253-4，TO-253AA 包装：带 描述：MOSFET N-CH 12V 25MA SOT-143 分立半导体产品 晶体管 - FET，MOSFET - 射频

Silicon N-Channel MOSFET Tetrode

文件：84.46 Kbytes Page：8 Pages

封装/外壳：SOT-143R 包装：带 描述：MOSFET N-CH 12V 25MA SOT-143R 分立半导体产品 晶体管 - FET，MOSFET - 射频

Photo Interrupters

Overview CNZ1021 series is a transmissive photosensor series in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other,

Photo Interrupters

Overview CNZ1021 series is a transmissive photosensor series in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other,

Integrated Circuit AF Power Amplifier, 1W

Integrated Circuit AF Power Amplifier, 1W

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DESCRIPTION The ZXCT1009 is a high side current sense monitor. Using this device eliminates the need to disrupt the ground plane when sensing a load current. It takes a high side voltage developed across a current shunt resistor and translates it into a proportional output current. A user

Reflective Photosensor

文件：49.26 Kbytes Page：2 Pages