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BDX85晶体管资料
BDX85别名：BDX85三极管、BDX85晶体管、BDX85晶体三极管
BDX85生产厂家：德国电子元件股份公司
BDX85制作材料：Si-N+Darl+Di
BDX85性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
BDX85封装形式：直插封装
BDX85极限工作电压：45V
BDX85最大电流允许值：10A
BDX85最大工作频率：10MHZ
BDX85引脚数：2
BDX85最大耗散功率：100W
BDX85放大倍数：β>1000
BDX85图片代号：E-44
BDX85vtest：45
BDX85htest：10000000
- BDX85atest：10
BDX85wtest：100
BDX85代换 BDX85用什么型号代替：BDX86C,BDX88C,2N6052,2SB638,2SB639,
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BDX85 | Power Transistors DESCRIPTION: TheCENTRALSEMICONDUCTOR2N6674,2N6675typesareNPNSiliconTripleDiffusedMesaPowerTransistorsdesignedforhighvoltageswitchingapplications. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 |  |   |
BDX85 | isc Silicon NPN Darlington Power Transistor DESCRIPTION •HighDCCurrentGain-:hFE=750(Min)@IC=3A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=45V(Min)-BDX85;60V(Min)-BDX85A80V(Min)-BDX85B;100V(Min)-BDX85C •ComplementtoTypeBDX86/A/B/C APPLICATIONS •Designedforuseinpowerlinearandswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
BDX85 | Silicon NPN Darlington Power Transistor DESCRIPTION •HighDCCurrentGain-:hFE=750(Min)@IC=3A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=45V(Min)-BDX85;60V(Min)-BDX85A80V(Min)-BDX85B;100V(Min)-BDX85C •ComplementtoTypeBDX86/A/B/C APPLICATIONS •Designedforuseinpowerlinearandswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
Power Transistors DESCRIPTION: TheCENTRALSEMICONDUCTOR2N6674,2N6675typesareNPNSiliconTripleDiffusedMesaPowerTransistorsdesignedforhighvoltageswitchingapplications. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | | | |
isc Silicon NPN Darlington Power Transistor DESCRIPTION •HighDCCurrentGain-:hFE=750(Min)@IC=3A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=45V(Min)-BDX85;60V(Min)-BDX85A80V(Min)-BDX85B;100V(Min)-BDX85C •ComplementtoTypeBDX86/A/B/C APPLICATIONS •Designedforuseinpowerlinearandswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Silicon NPN Darlington Power Transistor DESCRIPTION •HighDCCurrentGain-:hFE=750(Min)@IC=3A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=45V(Min)-BDX85;60V(Min)-BDX85A80V(Min)-BDX85B;100V(Min)-BDX85C •ComplementtoTypeBDX86/A/B/C APPLICATIONS •Designedforuseinpowerlinearandswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
Power Transistors DESCRIPTION: TheCENTRALSEMICONDUCTOR2N6674,2N6675typesareNPNSiliconTripleDiffusedMesaPowerTransistorsdesignedforhighvoltageswitchingapplications. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | | | |
isc Silicon NPN Darlington Power Transistor DESCRIPTION •HighDCCurrentGain-:hFE=750(Min)@IC=3A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=45V(Min)-BDX85;60V(Min)-BDX85A80V(Min)-BDX85B;100V(Min)-BDX85C •ComplementtoTypeBDX86/A/B/C APPLICATIONS •Designedforuseinpowerlinearandswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Silicon NPN Darlington Power Transistor DESCRIPTION •HighDCCurrentGain-:hFE=750(Min)@IC=3A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=45V(Min)-BDX85;60V(Min)-BDX85A80V(Min)-BDX85B;100V(Min)-BDX85C •ComplementtoTypeBDX86/A/B/C APPLICATIONS •Designedforuseinpowerlinearandswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
Power Transistors DESCRIPTION: TheCENTRALSEMICONDUCTOR2N6674,2N6675typesareNPNSiliconTripleDiffusedMesaPowerTransistorsdesignedforhighvoltageswitchingapplications. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | | | |
isc Silicon NPN Darlington Power Transistor DESCRIPTION •HighDCCurrentGain-:hFE=750(Min)@IC=3A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=45V(Min)-BDX85;60V(Min)-BDX85A80V(Min)-BDX85B;100V(Min)-BDX85C •ComplementtoTypeBDX86/A/B/C APPLICATIONS •Designedforuseinpowerlinearandswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Silicon NPN Darlington Power Transistor DESCRIPTION •HighDCCurrentGain-:hFE=750(Min)@IC=3A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=45V(Min)-BDX85;60V(Min)-BDX85A80V(Min)-BDX85B;100V(Min)-BDX85C •ComplementtoTypeBDX86/A/B/C APPLICATIONS •Designedforuseinpowerlinearandswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
Bipolar NPN Device in a Hermetically sealed TO3 文件：16.32 Kbytes Page：1 Pages | SEME-LAB Seme LAB |  | | |
Bipolar NPN Device in a Hermetically sealed TO3 文件：15.5 Kbytes Page：1 Pages | SEME-LAB Seme LAB | | | |
Bipolar NPN Device 文件：11.29 Kbytes Page：1 Pages | SEME-LAB Seme LAB | | |
BDX85产品属性
- 类型
描述
- 型号
BDX85
- 制造商
CENTRAL
- 制造商全称
Central Semiconductor Corp
- 功能描述
Power Transistors
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
22+ |
35000 |
OEM工厂,中国区10年优质供应商! |
||||
ST |
2023+ |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
||||
ST |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
ST |
23+ |
TO-3 |
16900 |
支持样品,原装现货,提供技术支持! |
|||
ST |
1738+ |
TO-3 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
ST |
22+ |
TO-3 |
16900 |
正规渠道,只有原装! |
|||
ST |
22+ |
TO-3 |
16900 |
支持样品 原装现货 提供技术支持! |
|||
TO-3 |
10000 |
全新 |
|||||
ST |
21+ |
TO-3 |
12588 |
原装正品,自己库存 假一罚十 |
|||
ST/意法 |
2021+ |
TO-3 |
36925 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
BDX85芯片相关品牌
BDX85规格书下载地址
BDX85参数引脚图相关
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BDX85数据表相关新闻
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BD9328EFJ：降压型开关稳压器●简介BD9328EFJ是一个同步降压开关稳压器，集成了2低电阻N沟道MOSFET。较宽广的输入电压范围内达到2A的连续输出电流。电流模式能提供快速瞬态响应和容易的相位补偿。●特点1）宽输入范围4.2V〜18.0V2）2A输出电流3）高侧/低侧FET导通电阻;0.15/0.13Ω电源开关4）低ESR输出陶瓷电容器5）低待机电流在关断模式6）380kHz的固定经营频
2012-11-10
DdatasheetPDF页码索引
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