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BDX53F晶体管资料

  • BDX53F别名:BDX53F三极管、BDX53F晶体管、BDX53F晶体三极管

  • BDX53F生产厂家

  • BDX53F制作材料:Si-N+Darl+Di

  • BDX53F性质:低频或音频放大 (LF)_功率放大 (L)

  • BDX53F封装形式:直插封装

  • BDX53F极限工作电压:160V

  • BDX53F最大电流允许值:8A

  • BDX53F最大工作频率:20MHZ

  • BDX53F引脚数:3

  • BDX53F最大耗散功率:60W

  • BDX53F放大倍数:β>750

  • BDX53F图片代号:B-10

  • BDX53Fvtest:160

  • BDX53Fhtest:20000000

  • BDX53Fatest:8

  • BDX53Fwtest:60

  • BDX53F代换 BDX53F用什么型号代替:2SD1025,

型号 功能描述 生产厂家 企业 LOGO 操作
BDX53F

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The BDX53F is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is BDX54F. ■ STMicroelectronics PREFERRED SALESTY

STMICROELECTRONICS

意法半导体

BDX53F

Complementary Silicon Power Darlington Ttransistors

DESCRIPTION The BDX53F are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. The complementary PNP t

TGS

BDX53F

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector Current -IC= 8A • High DC Current Gain- : hFE= 500(Min)@ IC= 2A • Complement to Type BDX54F APPLICATIONS • Designed for use in power linear and switching applications.

ISC

无锡固电

BDX53F

Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector Current -IC= 8A • High DC Current Gain- : hFE= 500(Min)@ IC= 2A • Complement to Type BDX54F APPLICATIONS • Designed for use in power linear and switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BDX53F

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

STMICROELECTRONICS

意法半导体

BDX53F

Trans Darlington NPN 160V 8A 3-Pin(3+Tab) TO-220 Tube

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Complementary Silicon Power Darlington Ttransistors

文件:66.5 Kbytes Page:1 Pages

TGS

BDX53F产品属性

  • 类型

    描述

  • Number of Elements per Chip:

    1

  • Minimum Operating Temperature:

    -65°C

  • Minimum DC Current Gain:

    500@2A@5V

  • Maximum Operating Temperature:

    150°C

  • Maximum Emitter Base Voltage:

    5V

  • Maximum Continuous DC Collector Current:

    8A

  • Maximum Collector Emitter Voltage:

    160V

  • Maximum Collector Base Voltage:

    160V

  • Maximum Base Emitter Saturation Voltage:

    5@10mA@2AV

  • Configuration:

    Single

更新时间:2026-5-14 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
24+
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ST
2026+
TO-220
20
原装正品 假一罚十!
ST/意法
25+
TO220F
20300
ST/意法原装特价BDX53F即刻询购立享优惠#长期有货
ST
25+
TO-220
20000
原装,请咨询
ST
26+
TO-220
60000
只有原装 可配单
STM
23+
NA
2736
专做原装正品,假一罚百!
ST
24+
TO-220
15000
原装现货热卖
ST
19+
TO-220
201
全新 发货1-2天
ST
2511
TO-220
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
24+
TO-220
10000
全新

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