Power Linear and Switching Applications

Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX34/34A/34B/34C respectively

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B = 100 Vdc (min) − BDX33C, BDX334C

POWER TRANSISTORS(10A,70W)

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 40-100 VOLTS 70 WATTS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The com

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON • Complement to type BDX34/A/B/C APPLICATIONS • For power linear and switching applications

DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low speed switching application* FEATURES: * Collector-Emitter Sustaining Voltage VCEO(sus) = 45 V (Min) - BDX33. BUX34 = 60 V(Min)- BDX33A. BDX34A

Silicon NPN Darlington Power Transistor

DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low speed switching application* FEATURES: * Collector-Emitter Sustaining Voltage VCEO(sus) = 45 V (Min) - BDX33. BUX34 = 60 V(Min)- BDX33A. BDX34A

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON • Complement to type BDX34/A/B/C APPLICATIONS • For power linear and switching applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON • Complement to type BDX34/A/B/C APPLICATIONS • For power linear and switching applications

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The BDX33B and BDX33C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BDX34B and BDX34C respectively.

NPN/PNP PLASTIC POWER TRANSISTORS

NPN/PNP PLASTIC POWER TRANSISTORS Power Darlington for Linear Switchilng Application

NPN/PNP PLASTIC POWER TRANSISTORS

NPN/PNP PLASTIC POWER TRANSISTORS Power Darlington for Linear Switchilng Application

NPN Silicon Power Darlingtons

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Designed For Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D • 70W at 25°C Cass Temperature •

10 A，100 V，NPN 达林顿双极功率晶体管

The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33B, BDX33C, BDX34B and BDX34C are complementary devices. • High DC Current Gain -hFE = 2500 (typ.) at IC = 4.0\n• Collector-Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.)BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C\n• Low Collector-Emitter Saturation Voltage CE(sat) = 2.5 Vdc (max.) at IC = 3.0 AdcBDX33B, 33C/34B, 34C\n• Monolith;

Darlington Complementary Silicon Power Transistors

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NPN Silicon Power Darlingtons

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BJT 双极性三极管

Transistor

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN DARL 100V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 100V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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SEMICONDUCTORS

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Darlington Complementary Silicon Power Transistors

文件：93.81 Kbytes Page：6 Pages

NPN SILICON POWER DARLINGTONS

文件：112.77 Kbytes Page：6 Pages

Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D

文件：97.23 Kbytes Page：5 Pages

Darlington Complementary Silicon Power Transistors

文件：73.67 Kbytes Page：6 Pages

Darlington Complementary Silicon Power Transistors

文件：93.81 Kbytes Page：6 Pages

Darlington Complementary Silicon Power Transistors

文件：100.54 Kbytes Page：6 Pages