位置:首页 > IC中文资料第5794页 > BDX
BDX晶体管资料
BDX11(-4...-7)别名:BDX11(-4...-7)三极管、BDX11(-4...-7)晶体管、BDX11(-4...-7)晶体三极管
BDX11(-4...-7)生产厂家:德国电子元件股份公司
BDX11(-4...-7)制作材料:Si-NPN
BDX11(-4...-7)性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
BDX11(-4...-7)封装形式:直插封装
BDX11(-4...-7)极限工作电压:160V
BDX11(-4...-7)最大电流允许值:15A
BDX11(-4...-7)最大工作频率:<1MHZ或未知
BDX11(-4...-7)引脚数:2
BDX11(-4...-7)最大耗散功率:117W
BDX11(-4...-7)放大倍数:
BDX11(-4...-7)图片代号:E-44
BDX11(-4...-7)vtest:160
BDX11(-4...-7)htest:999900
- BDX11(-4...-7)atest:15
BDX11(-4...-7)wtest:117
BDX11(-4...-7)代换 BDX11(-4...-7)用什么型号代替:BDX50,BDY19,BDY56,BDY74,BDY77,2N3442,2N3773,3DD72E,
BDX价格
参考价格:¥2.0528
型号:BDX33BG 品牌:ON 备注:这里有BDX多少钱,2025年最近7天走势,今日出价,今日竞价,BDX批发/采购报价,BDX行情走势销售排行榜,BDX报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
BDX | Digital Control?팏on-Isolated POL DC-DC Converter 文件:723.87 Kbytes Page:37 Pages | BELLNIX | ||
isc Silicon PNP Power Transistor DESCRIPTION • Continuous Collector Current-IC= -4A • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -55V(Min.) APPLICATIONS • Designed for general purpose switching and amplifier applications. | ISC 无锡固电 | |||
Silicon PNP Power Transistor DESCRIPTION • Continuous Collector Current-IC= -4A • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -55V(Min.) APPLICATIONS • Designed for general purpose switching and amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
isc Silicon PNP Power Transistor DESCRIPTION • Continuous Collector Current-IC= -4A • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -55V(Min.) APPLICATIONS • Designed for LF Large Signal Power Amplification and Medium Current Switching | ISC 无锡固电 | |||
PNP Epitaxial Silicon Bipolar Transistor FEATURES: • LF Large Signal Power Amplification • Medium Current Switching | TTELECTT Electronics. TT电子公司梯梯电子集成制造服务(苏州)有限公司 | |||
isc Silicon PNP Power Transistor DESCRIPTION ·Contunuous Collector Current-IC= -3A ·Collector Power Dissipation-: PC= 25W @TC= 25℃ Collector-Emitter Sustaining Voltage-: VCEO(SUS)= -140V(Min) APPLICATIONS ·Designed for use in general purpose switching and linear amplifier applications requiring high breakdown vo | ISC 无锡固电 | |||
PNP SILICON TRANSISTOR EPITAXIAL BASE [Comset] LF Large Signal Power Amplification High Current Switching Suitable for : Series and shunt regulators High Fidelity Amplifiers Power-switching circuits | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • High switching speed APPLICATIONS • LF large signal power amplification • Suitable for series and shunt regulators, high fidelity amplifiers and power switching circuits | SAVANTIC | |||
PNP SILICON TRANSISTOR EPITAXIAL BASE PNP SILICON TRANSISTOR EPITAXIAL BASE LF Large Signal Power Amplification High Current Switching Thermal Fatigue Inspection Compliance to RoHS Applications : • Series and shunt regulators • High Fidelity Amplifiers • Power-switching circuits • Solenoid drivers | COMSET | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • High switching speed APPLICATIONS • LF large signal power amplification • Suitable for series and shunt regulators, high fidelity amplifiers and power switching circuits | ISC 无锡固电 | |||
PNP SILICON TRANSISTORS, EPITAXIAL BASE PNP SILICON TRANSISTORS, EPITAXIAL BASE High currant switching Commutation fort courant | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
PNP SILICON TRANSISTORS, EPITAXIAL BASE PNP SILICON TRANSISTORS, EPITAXIAL BASE High currant switching Commutation fort courant | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
PNP SILICON TRANSISTOR EPITAXIAL BASE [Comset] LF Large Signal Power Amplification High Current Switching Suitable for : Series and shunt regulators High Fidelity Amplifiers Power-switching circuits | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
PNP SILICON TRANSISTOR EPITAXIAL BASE PNP SILICON TRANSISTOR EPITAXIAL BASE LF Large Signal Power Amplification High Current Switching Thermal Fatigue Inspection Compliance to RoHS Applications : • Series and shunt regulators • High Fidelity Amplifiers • Power-switching circuits • Solenoid drivers | COMSET | |||
PNP SILICON TRANSISTORS EPITAXIAL BASE [Comset] LF Large Signal Power Amplification High Current Fast Switching Thermal Fatigue Inspection | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
isc Silicon PNP Power Transistor DESCRIPTION • High Current Capability • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -140V(Min) • High Switching Speed APPLICATIONS • Designed for LF large signal power amplification. | ISC 无锡固电 | |||
PNP SILICON TRANSISTORS EPITAXIAL BASE The BDX20 are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Switching Thermal Fatigue Inspection Compliance to RoHS. | COMSET | |||
NPN/PNP PLASTIC POWER TRANSISTORS NPN/PNP PLASTIC POWER TRANSISTORS Power Darlington for Linear Switchilng Application | TEL 东电电子 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON • Complement to type BDX34/A/B/C APPLICATIONS • For power linear and switching applications | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON • Complement to type BDX34/A/B/C APPLICATIONS • For power linear and switching applications | ISC 无锡固电 | |||
NPN Silicon Power Darlingtons Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Designed For Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D • 70W at 25°C Cass Temperature • | MCC 美微科 | |||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The com | COMSET | |||
NPN SILICON POWER DARLINGTONS NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A | POINN Power Innovations Ltd | |||
POWER TRANSISTORS(10A,70W) 10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 40-100 VOLTS 70 WATTS | MOSPEC 统懋 | |||
Power Linear and Switching Applications Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX34/34A/34B/34C respectively | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Silicon NPN Darlington Power Transistor DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS ..designed for general-purpose amplifier and low speed switching application* FEATURES: * Collector-Emitter Sustaining Voltage VCEO(sus) = 45 V (Min) - BDX33. BUX34 = 60 V(Min)- BDX33A. BDX34A | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
NPN/PNP PLASTIC POWER TRANSISTORS NPN/PNP PLASTIC POWER TRANSISTORS Power Darlington for Linear Switchilng Application | CDIL | |||
DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS ..designed for general-purpose amplifier and low speed switching application* FEATURES: * Collector-Emitter Sustaining Voltage VCEO(sus) = 45 V (Min) - BDX33. BUX34 = 60 V(Min)- BDX33A. BDX34A | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The com | COMSET | |||
NPN/PNP PLASTIC POWER TRANSISTORS NPN/PNP PLASTIC POWER TRANSISTORS Power Darlington for Linear Switchilng Application | CDIL | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON • Complement to type BDX34/A/B/C APPLICATIONS • For power linear and switching applications | SAVANTIC | |||
DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS ..designed for general-purpose amplifier and low speed switching application* FEATURES: * Collector-Emitter Sustaining Voltage VCEO(sus) = 45 V (Min) - BDX33. BUX34 = 60 V(Min)- BDX33A. BDX34A | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
Silicon NPN Darlington Power Transistor DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS ..designed for general-purpose amplifier and low speed switching application* FEATURES: * Collector-Emitter Sustaining Voltage VCEO(sus) = 45 V (Min) - BDX33. BUX34 = 60 V(Min)- BDX33A. BDX34A | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
POWER TRANSISTORS(10A,70W) 10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 40-100 VOLTS 70 WATTS | MOSPEC 统懋 | |||
Power Linear and Switching Applications Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX34/34A/34B/34C respectively | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
NPN/PNP PLASTIC POWER TRANSISTORS NPN/PNP PLASTIC POWER TRANSISTORS Power Darlington for Linear Switchilng Application | TEL 东电电子 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON • Complement to type BDX34/A/B/C APPLICATIONS • For power linear and switching applications | SAVANTIC | |||
NPN Silicon Power Darlingtons Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Designed For Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D • 70W at 25°C Cass Temperature • | MCC 美微科 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON • Complement to type BDX34/A/B/C APPLICATIONS • For power linear and switching applications | ISC 无锡固电 | |||
NPN SILICON POWER DARLINGTONS NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A | POINN Power Innovations Ltd | |||
POWER TRANSISTORS(10A,70W) 10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 40-100 VOLTS 70 WATTS | MOSPEC 统懋 | |||
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B = 100 Vdc (min) − BDX33C, BDX334C | ONSEMI 安森美半导体 | |||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The BDX33B and BDX33C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BDX34B and BDX34C respectively. | STMICROELECTRONICS 意法半导体 | |||
NPN SILICON POWER DARLINGTONS NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A | POINN Power Innovations Ltd | |||
Darlington Complementary Silicon Power Transistors DARLINGTON 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80– 100 VOLTS 70 WATTS | Motorola 摩托罗拉 | |||
NPN/PNP PLASTIC POWER TRANSISTORS NPN/PNP PLASTIC POWER TRANSISTORS Power Darlington for Linear Switchilng Application | TEL 东电电子 | |||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The com | COMSET | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON • Complement to type BDX34/A/B/C APPLICATIONS • For power linear and switching applications | SAVANTIC | |||
NPN Silicon Power Darlingtons Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Designed For Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D • 70W at 25°C Cass Temperature • | MCC 美微科 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON • Complement to type BDX34/A/B/C APPLICATIONS • For power linear and switching applications | ISC 无锡固电 | |||
Power Linear and Switching Applications Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX34/34A/34B/34C respectively | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON • Complement to type BDX34/A/B/C APPLICATIONS • For power linear and switching applications | SAVANTIC | |||
NPN/PNP PLASTIC POWER TRANSISTORS NPN/PNP PLASTIC POWER TRANSISTORS Power Darlington for Linear Switchilng Application | CDIL | |||
DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS ..designed for general-purpose amplifier and low speed switching application* FEATURES: * Collector-Emitter Sustaining Voltage VCEO(sus) = 45 V (Min) - BDX33. BUX34 = 60 V(Min)- BDX33A. BDX34A | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
POWER TRANSISTORS(10A,70W) 10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 40-100 VOLTS 70 WATTS | MOSPEC 统懋 | |||
NPN SILICON POWER DARLINGTONS NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A | POINN Power Innovations Ltd | |||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The BDX33B and BDX33C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BDX34B and BDX34C respectively. | STMICROELECTRONICS 意法半导体 | |||
Power Linear and Switching Applications Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX34/34A/34B/34C respectively | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
NPN/PNP PLASTIC POWER TRANSISTORS NPN/PNP PLASTIC POWER TRANSISTORS Power Darlington for Linear Switchilng Application | TEL 东电电子 | |||
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B = 100 Vdc (min) − BDX33C, BDX334C | ONSEMI 安森美半导体 |
BDX产品属性
- 类型
描述
- 型号
BDX
- 制造商
ON Semiconductor
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-220 |
942 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ST |
24+ |
原厂原装正品 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
FAIRCHILD/仙童 |
25+ |
TO-220220F |
45000 |
FAIRCHILD/仙童全新现货BDX54C/F/A/B即刻询购立享优惠#长期有排单订 |
|||
ST/意法 |
24+ |
TO-2-3 |
860000 |
明嘉莱只做原装正品现货 |
|||
THOMSON |
24+/25+ |
41 |
原装正品现货库存价优 |
||||
ONSEMI |
NA |
50 |
全新原装!优势库存热卖中! |
||||
STM |
23+ |
TO-220-3 |
1450 |
||||
ST/意法 |
21+ |
NA |
18400 |
只做原装,假一罚十 |
|||
恩XP |
24+ |
TO-126 |
504284 |
免费送样原盒原包现货一手渠道联系 |
|||
2450+ |
6540 |
只做原装正品现货或订货假一赔十! |
BDX规格书下载地址
BDX参数引脚图相关
- c901
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BDX33
- BDX32
- BDX31
- BDX30(-6...-16)
- BDX29(-6...-16)
- BDX29
- BDX28-6
- BDX28(-6...-16)
- BDX28
- BDX27-6
- BDX27(-6...-16)
- BDX27
- BDX25(-4...-7)
- BDX24(-4...-7)
- BDX23(-4...-7)
- BDX22(-4...-7)
- BDX20
- BDX18N
- BDX18A
- BDX18
- BDX16AA
- BDX16A
- BDX16
- BDX15
- BDX14S
- BDX14AA
- BDX14A
- BDX14
- BDX13(-4...-7)
- BDX13
- BDX12
- BDX11(-4...-7)
- BDX11
- BDX10
- BDW94CFP
- BDW94CFI
- BDW94CF
- BDW94C
- BDW94B
- BDW94A
- BDW94
- BDW93CFP
- BDW93CFI
- BDW93CF
- BDW93C
- BDW93B
- BDW93A
- BDW93
- BDW92
- BDW91
- BDW84D
- BDW84C
- BDW84B
- BDW84A
- BDW84
- BDW83D
- BDW83C
- BDW83B
- BDW83A
- BDW83
BDX数据表相关新闻
BD9F500QUZ-E2
进口代理
2024-4-18BE-A301
BE-A301
2022-3-15BF7612CM28,40k现货,批次21+
BF7612CM28,40k现货,批次21+
2021-11-18BF7612CM28,BYD,40K,21+
BF7612CM28,BYD,40K,21+
2021-11-10BD9F800 DC / DC降压开关稳压器BD9F800MUX-ZE2
ROHM Semiconductors的BD9F800是具有高速响应的恒定导通时间控制的DC / DC转换器
2020-6-9BD9328EFJ-降压型开关稳压器
BD9328EFJ:降压型开关稳压器 ●简介 BD9328EFJ是一个同步降压开关稳压器,集成了2低电阻N沟道MOSFET。 较宽广的输入电压范围内达到2A的连续输出电流。 电流模式能提供快速瞬态响应和容易的相位补偿。 ●特点 1)宽输入范围4.2V〜18.0V 2)2A输出电流 3)高侧/低侧FET导通电阻;0.15/0.13Ω电源开关 4)低ESR输出陶瓷电容器 5)低待机电流在关断模式 6)380 kHz的固定经营频
2012-11-10
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103