位置：首页 > IC中文资料第601页 > BDT64
BDT64晶体管资料
BDT64A别名：BDT64A三极管、BDT64A晶体管、BDT64A晶体三极管
BDT64A生产厂家：英国Mullard有限公司
BDT64A制作材料：Si-P+Darl+Di
BDT64A性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
BDT64A封装形式：直插封装
BDT64A极限工作电压：80V
BDT64A最大电流允许值：12A
BDT64A最大工作频率：>10MHZ
BDT64A引脚数：3
BDT64A最大耗散功率：125W
BDT64A放大倍数：β>1000
BDT64A图片代号：B-89
BDT64Avtest：80
BDT64Ahtest：10000100
- BDT64Aatest：12
BDT64Awtest：125
BDT64A代换 BDT64A用什么型号代替：BDV64A,BDW46,BDW94B,BDX88B,2N6051,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BDT64 | SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic enveloppe. NPN complements are BDT65,BDT65A,BDT65B AND BDT65C. | Philips 飞利浦 |   | |
BDT64 | isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications | ISC 无锡固电 | | |
BDT64 | SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT65-A-B-C Compliance to RoHS. | COMSET | | |
BDT64 | SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
BDT64 | Silicon PNP Darlington Power Transistor 文件：137.99 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BDT64 | Silicon Darlington Power Transistor | ETC 知名厂家 | ETC | |
BDT64 | Darlington BJT | ETC 知名厂家 | ETC | |
BDT64 | Transistor | COMSET | | |
SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic enveloppe. NPN complements are BDT65,BDT65A,BDT65B AND BDT65C. | Philips 飞利浦 | | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications | ISC 无锡固电 | | ||
SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT65-A-B-C Compliance to RoHS. | COMSET | | ||
SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic enveloppe. NPN complements are BDT65,BDT65A,BDT65B AND BDT65C. | Philips 飞利浦 | | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector Current -IC= -12A • High DC Current Gain-hFE= 1000(Min)@ IC= -5A • Complement to Type BDT65F/AF/BF/CF APPLICATIONS • Designed for audio output stages and general purpose amplifier applications | ISC 无锡固电 | | ||
Silicon PNP Darlington Power Transistor DESCRIPTION • Collector Current -IC= -12A • High DC Current Gain-hFE= 1000(Min)@ IC= -5A • Complement to Type BDT65F/AF/BF/CF APPLICATIONS • Designed for audio output stages and general purpose amplifier applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic enveloppe. NPN complements are BDT65,BDT65A,BDT65B AND BDT65C. | Philips 飞利浦 | | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications | ISC 无锡固电 | | ||
SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT65-A-B-C Compliance to RoHS. | COMSET | | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector Current -IC= -12A • High DC Current Gain-hFE= 1000(Min)@ IC= -5A • Complement to Type BDT65F/AF/BF/CF APPLICATIONS • Designed for audio output stages and general purpose amplifier applications | ISC 无锡固电 | | ||
SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic enveloppe. NPN complements are BDT65,BDT65A,BDT65B AND BDT65C. | Philips 飞利浦 | | ||
Silicon PNP Darlington Power Transistor DESCRIPTION • Collector Current -IC= -12A • High DC Current Gain-hFE= 1000(Min)@ IC= -5A • Complement to Type BDT65F/AF/BF/CF APPLICATIONS • Designed for audio output stages and general purpose amplifier applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic enveloppe. NPN complements are BDT65,BDT65A,BDT65B AND BDT65C. | Philips 飞利浦 | | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications | ISC 无锡固电 | | ||
SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT65-A-B-C Compliance to RoHS. | COMSET | | ||
SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic enveloppe. NPN complements are BDT65,BDT65A,BDT65B AND BDT65C. | Philips 飞利浦 | | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector Current -IC= -12A • High DC Current Gain-hFE= 1000(Min)@ IC= -5A • Complement to Type BDT65F/AF/BF/CF APPLICATIONS • Designed for audio output stages and general purpose amplifier applications | ISC 无锡固电 | | ||
Silicon PNP Darlington Power Transistor DESCRIPTION • Collector Current -IC= -12A • High DC Current Gain-hFE= 1000(Min)@ IC= -5A • Complement to Type BDT65F/AF/BF/CF APPLICATIONS • Designed for audio output stages and general purpose amplifier applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic enveloppe. NPN complements are BDT65,BDT65A,BDT65B AND BDT65C. | Philips 飞利浦 | | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector Current -IC= -12A • High DC Current Gain-hFE= 1000(Min)@ IC= -5A • Complement to Type BDT65F/AF/BF/CF APPLICATIONS • Designed for audio output stages and general purpose amplifier applications | ISC 无锡固电 | | ||
Silicon PNP Darlington Power Transistor DESCRIPTION • Collector Current -IC= -12A • High DC Current Gain-hFE= 1000(Min)@ IC= -5A • Complement to Type BDT65F/AF/BF/CF APPLICATIONS • Designed for audio output stages and general purpose amplifier applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Darlington Power Transistor 文件：137.99 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Darlington Power Transistor 文件：137.99 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon PNP Darlington Power Transistor 文件：137.99 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |
BDT64产品属性
- 类型
描述
- 型号
BDT64
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY TRANSISTOR TO-220AB PNP -60V -12A 125W BCE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
TO-220 |
15000 |
原装现货热卖 |
|||
ST |
25+ |
TO-220 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
INFINEON |
24+ |
SC70-2 |
9987 |
公司现货库存,支持实单 |
|||
PHI/ST |
25+ |
TO-220 |
5800 |
原装正品,假一罚十! |
|||
ST |
25+ |
TO-220 |
16900 |
原装，请咨询 |
|||
恩XP |
23+ |
TO-220F |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
ST |
26+ |
TO-220 |
60000 |
只有原装 可配单 |
|||
24+ |
TO-220FA |
10000 |
全新 |
||||
ST |
24+ |
TO-220 |
5000 |
全现原装公司现货 |
|||
ST |
24+ |
TO-220 |
30000 |
只做原装正品现货 欢迎来电查询15919825718 |
BDT64芯片相关品牌
BDT64规格书下载地址
BDT64参数引脚图相关
- c901
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BDT83
- BDT82F(A)
- BDT82F
- BDT82
- BDT81F(A)
- BDT81F
- BDT81
- BDT65F
- BDT65CF
- BDT65C
- BDT65BF
- BDT65B
- BDT65AF
- BDT65A
- BDT65
- BDT64F
- BDT64CF
- BDT64C
- BDT64BF
- BDT64B
- BDT64AF
- BDT64A
- BDT63F
- BDT63C
- BDT63B
- BDT63A
- BDT63
- BDT62C
- BDT62B
- BDT62A
- BDT62
- BDT61F
- BDT61CF
- BDT61C
- BDT61BF
- BDT61B
- BDT61AF
- BDT61A
- BDT61
- BDT60F
- BDT60CF
- BDT60C
- BDT60BF
- BDT60B
- BDT60AF
- BDT60A
- BDT60
- BDT58
- BDT57
- BDT56
- BDT55
- BDT54
- BDT53
- BDT52
- BDT51
- BDT42F
- BDT42CF
- BDT42C
BDT64数据表相关新闻
BD9F500QUZ-E2
进口代理
2024-4-18BE-A301
BE-A301
2022-3-15BF7612CM28，40k现货，批次21+
BF7612CM28，40k现货，批次21+
2021-11-18BF7612CM28，BYD，40K，21+
BF7612CM28，BYD，40K，21+
2021-11-10BD9F800 DC / DC降压开关稳压器BD9F800MUX-ZE2
ROHM Semiconductors的BD9F800是具有高速响应的恒定导通时间控制的DC / DC转换器
2020-6-9BD9328EFJ-降压型开关稳压器
BD9328EFJ：降压型开关稳压器 ●简介 BD9328EFJ是一个同步降压开关稳压器，集成了2低电阻N沟道MOSFET。 较宽广的输入电压范围内达到2A的连续输出电流。 电流模式能提供快速瞬态响应和容易的相位补偿。 ●特点 1）宽输入范围4.2V〜18.0V 2）2A输出电流 3）高侧/低侧FET导通电阻;0.15/0.13Ω电源开关 4）低ESR输出陶瓷电容器 5）低待机电流在关断模式 6）380 kHz的固定经营频
2012-11-10
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
