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BDT64晶体管资料
BDT64A别名:BDT64A三极管、BDT64A晶体管、BDT64A晶体三极管
BDT64A生产厂家:英国Mullard有限公司
BDT64A制作材料:Si-P+Darl+Di
BDT64A性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
BDT64A封装形式:直插封装
BDT64A极限工作电压:80V
BDT64A最大电流允许值:12A
BDT64A最大工作频率:>10MHZ
BDT64A引脚数:3
BDT64A最大耗散功率:125W
BDT64A放大倍数:β>1000
BDT64A图片代号:B-89
BDT64Avtest:80
BDT64Ahtest:10000100
- BDT64Aatest:12
BDT64Awtest:125
BDT64A代换 BDT64A用什么型号代替:BDV64A,BDW46,BDW94B,BDX88B,2N6051,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
BDT64 | SILICON DARLINGTON POWER TRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitforaudiooutputstagesandgeneralpurposeamplifierandswitchingapplications.TO-220plasticenveloppe.NPNcomplementsareBDT65,BDT65A,BDT65BANDBDT65C. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | ||
BDT64 | isc Silicon PNP Darlington Power Transistor DESCRIPTION ·CollectorCurrent-IC=-12A ·HighDCCurrentGain-hFE=1000(Min)@IC=-5A ·ComplementtoTypeBDT65/A/B/C APPLICATIONS ·Designedforaudiooutputstagesandgeneralpurposeamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
BDT64 | SILICON DARLINGTON POWER TRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication.PNPcomplementsareBDT65-A-B-CCompliancetoRoHS. | COMSET Comset Semiconductor | ||
BDT64 | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | ||
BDT64 | Silicon PNP Darlington Power Transistor 文件:137.99 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
SILICON DARLINGTON POWER TRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitforaudiooutputstagesandgeneralpurposeamplifierandswitchingapplications.TO-220plasticenveloppe.NPNcomplementsareBDT65,BDT65A,BDT65BANDBDT65C. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·CollectorCurrent-IC=-12A ·HighDCCurrentGain-hFE=1000(Min)@IC=-5A ·ComplementtoTypeBDT65/A/B/C APPLICATIONS ·Designedforaudiooutputstagesandgeneralpurposeamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SILICON DARLINGTON POWER TRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication.PNPcomplementsareBDT65-A-B-CCompliancetoRoHS. | COMSET Comset Semiconductor | |||
SILICON DARLINGTON POWER TRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitforaudiooutputstagesandgeneralpurposeamplifierandswitchingapplications.TO-220plasticenveloppe.NPNcomplementsareBDT65,BDT65A,BDT65BANDBDT65C. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
isc Silicon PNP Darlington Power Transistor DESCRIPTION •CollectorCurrent-IC=-12A •HighDCCurrentGain-hFE=1000(Min)@IC=-5A •ComplementtoTypeBDT65F/AF/BF/CF APPLICATIONS •Designedforaudiooutputstagesandgeneralpurposeamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Silicon PNP Darlington Power Transistor DESCRIPTION •CollectorCurrent-IC=-12A •HighDCCurrentGain-hFE=1000(Min)@IC=-5A •ComplementtoTypeBDT65F/AF/BF/CF APPLICATIONS •Designedforaudiooutputstagesandgeneralpurposeamplifierapplications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SILICON DARLINGTON POWER TRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitforaudiooutputstagesandgeneralpurposeamplifierandswitchingapplications.TO-220plasticenveloppe.NPNcomplementsareBDT65,BDT65A,BDT65BANDBDT65C. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·CollectorCurrent-IC=-12A ·HighDCCurrentGain-hFE=1000(Min)@IC=-5A ·ComplementtoTypeBDT65/A/B/C APPLICATIONS ·Designedforaudiooutputstagesandgeneralpurposeamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SILICON DARLINGTON POWER TRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication.PNPcomplementsareBDT65-A-B-CCompliancetoRoHS. | COMSET Comset Semiconductor | |||
isc Silicon PNP Darlington Power Transistor DESCRIPTION •CollectorCurrent-IC=-12A •HighDCCurrentGain-hFE=1000(Min)@IC=-5A •ComplementtoTypeBDT65F/AF/BF/CF APPLICATIONS •Designedforaudiooutputstagesandgeneralpurposeamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SILICON DARLINGTON POWER TRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitforaudiooutputstagesandgeneralpurposeamplifierandswitchingapplications.TO-220plasticenveloppe.NPNcomplementsareBDT65,BDT65A,BDT65BANDBDT65C. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
Silicon PNP Darlington Power Transistor DESCRIPTION •CollectorCurrent-IC=-12A •HighDCCurrentGain-hFE=1000(Min)@IC=-5A •ComplementtoTypeBDT65F/AF/BF/CF APPLICATIONS •Designedforaudiooutputstagesandgeneralpurposeamplifierapplications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SILICON DARLINGTON POWER TRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitforaudiooutputstagesandgeneralpurposeamplifierandswitchingapplications.TO-220plasticenveloppe.NPNcomplementsareBDT65,BDT65A,BDT65BANDBDT65C. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·CollectorCurrent-IC=-12A ·HighDCCurrentGain-hFE=1000(Min)@IC=-5A ·ComplementtoTypeBDT65/A/B/C APPLICATIONS ·Designedforaudiooutputstagesandgeneralpurposeamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SILICON DARLINGTON POWER TRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication.PNPcomplementsareBDT65-A-B-CCompliancetoRoHS. | COMSET Comset Semiconductor | |||
SILICON DARLINGTON POWER TRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitforaudiooutputstagesandgeneralpurposeamplifierandswitchingapplications.TO-220plasticenveloppe.NPNcomplementsareBDT65,BDT65A,BDT65BANDBDT65C. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
isc Silicon PNP Darlington Power Transistor DESCRIPTION •CollectorCurrent-IC=-12A •HighDCCurrentGain-hFE=1000(Min)@IC=-5A •ComplementtoTypeBDT65F/AF/BF/CF APPLICATIONS •Designedforaudiooutputstagesandgeneralpurposeamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Silicon PNP Darlington Power Transistor DESCRIPTION •CollectorCurrent-IC=-12A •HighDCCurrentGain-hFE=1000(Min)@IC=-5A •ComplementtoTypeBDT65F/AF/BF/CF APPLICATIONS •Designedforaudiooutputstagesandgeneralpurposeamplifierapplications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SILICON DARLINGTON POWER TRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitforaudiooutputstagesandgeneralpurposeamplifierandswitchingapplications.TO-220plasticenveloppe.NPNcomplementsareBDT65,BDT65A,BDT65BANDBDT65C. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
isc Silicon PNP Darlington Power Transistor DESCRIPTION •CollectorCurrent-IC=-12A •HighDCCurrentGain-hFE=1000(Min)@IC=-5A •ComplementtoTypeBDT65F/AF/BF/CF APPLICATIONS •Designedforaudiooutputstagesandgeneralpurposeamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Silicon PNP Darlington Power Transistor DESCRIPTION •CollectorCurrent-IC=-12A •HighDCCurrentGain-hFE=1000(Min)@IC=-5A •ComplementtoTypeBDT65F/AF/BF/CF APPLICATIONS •Designedforaudiooutputstagesandgeneralpurposeamplifierapplications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
Silicon PNP Darlington Power Transistor 文件:137.99 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
Silicon PNP Darlington Power Transistor 文件:137.99 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
Silicon PNP Darlington Power Transistor 文件:137.99 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 |
BDT64产品属性
- 类型
描述
- 型号
BDT64
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY TRANSISTOR TO-220AB PNP -60V -12A 125W BCE
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
PHSSEMICONDUCTOR |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ST |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
1950+ |
TO220 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
ST/意法 |
23+ |
NA/ |
3267 |
原装现货,当天可交货,原型号开票 |
|||
ST |
23+ |
TO-220 |
16900 |
支持样品,原装现货,提供技术支持! |
|||
ST |
2020+ |
TO-220 |
6000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ST |
17+ |
TO-220 |
15000 |
原装现货热卖 |
|||
ST/STMicroelectronics/意法半导 |
21+ |
TO-220 |
670 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
23+ |
TO-220 |
9896 |
||||
ST |
11+ |
TO-220 |
670 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
BDT64规格书下载地址
BDT64参数引脚图相关
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2024-4-18BE-A301
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2012-11-10
DdatasheetPDF页码索引
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