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BDT64C晶体管资料
BDT64C别名：BDT64C三极管、BDT64C晶体管、BDT64C晶体三极管
BDT64C生产厂家：英国Mullard有限公司
BDT64C制作材料：Si-P+Darl+Di
BDT64C性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
BDT64C封装形式：直插封装
BDT64C极限工作电压：120V
BDT64C最大电流允许值：12A
BDT64C最大工作频率：>10MHZ
BDT64C引脚数：3
BDT64C最大耗散功率：125W
BDT64C放大倍数：β>1000
BDT64C图片代号：B-89
BDT64Cvtest：120
BDT64Chtest：10000100
- BDT64Catest：12
BDT64Cwtest：125
BDT64C代换 BDT64C用什么型号代替：BDV64C,BDX64C,ECG2344,
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BDT64C | SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT65-A-B-C Compliance to RoHS. | COMSET |   | |
BDT64C | SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic enveloppe. NPN complements are BDT65,BDT65A,BDT65B AND BDT65C. | Philips 飞利浦 | | |
BDT64C | isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications | ISC 无锡固电 | | |
BDT64C | Silicon PNP Darlington Power Transistor 文件：137.99 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
BDT64C | SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | |
SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic enveloppe. NPN complements are BDT65,BDT65A,BDT65B AND BDT65C. | Philips 飞利浦 | | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector Current -IC= -12A • High DC Current Gain-hFE= 1000(Min)@ IC= -5A • Complement to Type BDT65F/AF/BF/CF APPLICATIONS • Designed for audio output stages and general purpose amplifier applications | ISC 无锡固电 | | ||
Silicon PNP Darlington Power Transistor DESCRIPTION • Collector Current -IC= -12A • High DC Current Gain-hFE= 1000(Min)@ IC= -5A • Complement to Type BDT65F/AF/BF/CF APPLICATIONS • Designed for audio output stages and general purpose amplifier applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |
BDT64C产品属性
- 类型
描述
- 型号
BDT64C
- 制造商
TT Electronics/ Semelab
- 功能描述
DARLINGTON TRANSISTOR TO-220
- 制造商
TT Electronics/ Semelab
- 功能描述
DARLINGTON TRANSISTOR, TO-220
- 制造商
Distributed By MCM
- 功能描述
PNP, 120V,12A 125W Swo Transistor TO-220Ab Darlin
- 制造商
SEMELAB
- 功能描述
DARLINGTON TRANSISTOR, PNP, 120V, 12A, TO-220; Transistor
- Polarity
PNP; Collector Emitter Voltage
- V(br)ceo
-120V; Power Dissipation
- Pd
125W; DC Collector
- Current
-12A; DC Current Gain
- hFE
750; No. of
- Pins
3 ;RoHS
- Compliant
Yes
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI/ST |
24+ |
NA/ |
5000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
23+ |
TO-220 |
20000 |
全新原装假一赔十 |
|||
ST/MOT |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
PHI/ST |
25+ |
TO-220 |
5800 |
原装正品,假一罚十! |
|||
ph |
24+ |
500000 |
行业低价,代理渠道 |
||||
ST |
11+ |
TO-220 |
670 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法 |
25+ |
TO220F |
20300 |
ST/意法原装特价BDT64C即刻询购立享优惠#长期有货 |
|||
ST |
1950+ |
TO220 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
恩XP |
23+ |
TO-220F |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
ST |
24+ |
TO-220 |
20000 |
只做原装正品现货 欢迎来电查询15919825718 |
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BDT64C规格书下载地址
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2012-11-10
DdatasheetPDF页码索引
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