内置DAC的高精度灰阶电压生成IC

为支持现有客户而生产的产品。不对新设计出售此产品。 • 1chip design means fewer components\n• Built-in 10bit DAC\n• DAC output Buffer AMP (12ch)\n• Amp input select (CTL)\n• 3-line serial interface control\n• Thermal shut down\n• Power ON Reset Circuit\n8) VQFN032V5050 Package;

内置DAC的高精度灰阶电压生成IC

DAC内置灰度等级电压生成IC BD8149MUV 将²串行信号设定值控制、高精度10bit DAC、Buffer AMP (12ch)内置于1chip中。还搭载了EEPROM自动读取功能。 • Single-chip design realizes fewer components\n• Built in DAC output buffer amplifier (12ch)\n• I²C interface (SDA, SCL) STANDARD-MODE, FAST-MODE changeable\n• Thermal Shut Down circuit\n8) Under Voltage Lock Out circuit\n9) Power ON Reset circuit\n10) Input tolerant (SDA, SCL, EN, EN_AR, SEL)\n11);

High-precision Gamma Correction IC with built-in DAC

文件：332.33 Kbytes Page：11 Pages

封装/外壳：32-VFQFN 裸露焊盘 功能：伽玛校正 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GAMMA CORRECTION 32VQFN 集成电路（IC） 视频处理

Gamma voltage generated IC

文件：1.54224 Mbytes Page：21 Pages

Gamma voltage generated IC

文件：1.54224 Mbytes Page：21 Pages

封装/外壳：32-VFQFN 裸露焊盘 功能：伽马电压 包装：托盘 描述：IC VIDEO TFT-LCD VOLT REG 32VQFN 集成电路（IC） 视频处理

Silicon Epitaxial Planar Dual Capacitance Diode

Features • Silicon Epitaxial Planar Diode • Common cathode • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications     Tuning of separate resonant circuits, push-pull circuits in FM range, especially for car radios

Optocoupler with Phototransistor Output

DESCRIPTION The K814P/K824P/K844P consist of a phototransistor optically coupled to 2 gallium arsenide infrared emitting diodes (reverse polarity) in 4-pin (single); 8 pin (dual) or 16-pin (quad) plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance b

Dual Channel Detector

Two seperate elements, size 1,5x1,5 Individual spectral window for each element Designed for Gas Analysis applications The LHi 814 pyroelectric infrared-detector series is specially designed for gas analysis and monitorring applications. It includes two pyroelectric elements, each ha

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES • Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Flat-lead 6-pin thin-type ultra super minimold package. • Built-in 2 transistors (2 × 2SC5195)

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES • Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Flat-lead 6-pin thin-type ultra super minimold package. • Built-in 2 transistors (2 × 2SC5195)