BD745晶体管资料
BD745别名：BD745三极管、BD745晶体管、BD745晶体三极管
BD745生产厂家：美国得克萨斯仪表公司
BD745制作材料：Si-NPN
BD745性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
BD745封装形式：直插封装
BD745极限工作电压：50V
BD745最大电流允许值：20A
BD745最大工作频率：<1MHZ或未知
BD745引脚数：3
BD745最大耗散功率：115W
BD745放大倍数：
BD745图片代号：B-62
BD745vtest：50
BD745htest：999900
- BD745atest：20
BD745wtest：115
BD745代换 BD745用什么型号代替：BD249,DK151B,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BD745 | Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD746/A/B/C ·High current capability ·High power dissipation APPLICATIONS ·For use in power linear and switching applications | ISC 无锡固电 |   | |
BD745 | NPN SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD746 Series ● 115 W at 25°C Case Temperature ● 20 A Continuous Collector Current ● 25 A Peak Collector Current ● Customer-Specified Selections Available | POINN | | |
BD745 | Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD746/A/B/C ·High current capability ·High power dissipation APPLICATIONS ·For use in power linear and switching applications | SAVANTIC | | |
BD745 | Trans GP BJT NPN 45V 20A 3-Pin(3+Tab) SOT-93 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BD745 | Silicon NPN Power Transistor 文件：138.08 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BD745 | NPN SILICON POWER TRANSISTORS 文件：109.65 Kbytes Page：5 Pages | BOURNS 伯恩斯 | | |
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD746/A/B/C ·High current capability ·High power dissipation APPLICATIONS ·For use in power linear and switching applications | ISC 无锡固电 | | ||
NPN SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD746 Series ● 115 W at 25°C Case Temperature ● 20 A Continuous Collector Current ● 25 A Peak Collector Current ● Customer-Specified Selections Available | POINN | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD746/A/B/C ·High current capability ·High power dissipation APPLICATIONS ·For use in power linear and switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD746/A/B/C ·High current capability ·High power dissipation APPLICATIONS ·For use in power linear and switching applications | SAVANTIC | | ||
NPN SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD746 Series ● 115 W at 25°C Case Temperature ● 20 A Continuous Collector Current ● 25 A Peak Collector Current ● Customer-Specified Selections Available | POINN | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD746/A/B/C ·High current capability ·High power dissipation APPLICATIONS ·For use in power linear and switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD746/A/B/C ·High current capability ·High power dissipation APPLICATIONS ·For use in power linear and switching applications | ISC 无锡固电 | | ||
NPN SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD746 Series ● 115 W at 25°C Case Temperature ● 20 A Continuous Collector Current ● 25 A Peak Collector Current ● Customer-Specified Selections Available | POINN | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD746/A/B/C ·High current capability ·High power dissipation APPLICATIONS ·For use in power linear and switching applications | SAVANTIC | | ||
Silicon NPN Power Transistor 文件：138.08 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN SILICON POWER TRANSISTORS 文件：109.65 Kbytes Page：5 Pages | BOURNS 伯恩斯 | | ||
NPN SILICON POWER TRANSISTORS 文件：109.65 Kbytes Page：5 Pages | BOURNS 伯恩斯 | | ||
Silicon NPN Power Transistor 文件：138.08 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
封装/外壳：TO-218-3 包装：管件 描述：TRANS NPN 80V 20A SOT93 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
TRANS NPN 80V 20A | BOURNS 伯恩斯 | | ||
Silicon NPN Power Transistor 文件：138.08 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN SILICON POWER TRANSISTORS 文件：109.65 Kbytes Page：5 Pages | BOURNS 伯恩斯 | | ||
封装/外壳：TO-218-3 包装：卷带（TR） 描述：TRANS NPN 110V 20A SOT93 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
TRANS NPN 45V 20A SOT-93 | BOURNS 伯恩斯 | | ||
SWITCHMODE??Schottky Power Rectifirer SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers | MOTOROLA 摩托罗拉 | | ||
Integrated Circuit Audio Amplifier, 500mW Description: the NTE745 is a monolithic complementary power amplifier and preamplifier designed to deliver 1/2–Watt into a loudspeaker with a 3.0mV(rms) typical input. Gain and bandwidth are externally adjustable. Typical applications include portable AM–FM radios, tape recorders, phonographs, an | NTE | | ||
Rectifier diodes Schottky barrier GENERAL DESCRIPTION Schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performanc | PHILIPS 飞利浦 | | ||
Rectifier diodes Schottky barrier GENERAL DESCRIPTION Schottky rectifier diodes in a surface mounting plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal c | PHILIPS 飞利浦 | | ||
Rectifier diodes Schottky barrier GENERAL DESCRIPTION Schottky rectifier diodes in a surface mounting plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal c | PHILIPS 飞利浦 | |
BD745产品属性
- 类型
描述
- Configuration：
Single
- Material：
Si
- Maximum Collector Base Voltage：
50V
- Maximum Collector Emitter Saturation Voltage：
\\1@0.5A@5A3@5A@20A\\
- Maximum Collector Emitter Voltage：
45V
- Maximum DC Collector Current：
20A
- Maximum Emitter Base Voltage：
5V
- Maximum Operating Temperature：
150°C
- Maximum Power Dissipation：
115000mW
- Type：
NPN
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BOURNSINC |
23+ |
SOT-93 |
81000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
26+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
MOT |
23+ |
TO-3 |
7300 |
专注配单,只做原装进口现货 |
|||
TECCOR/达高 |
23+ |
TO-3P |
50000 |
全新原装正品现货,支持订货 |
|||
恩XP |
22+ |
TO-3P |
91600 |
||||
ST |
24+ |
TO-218 |
15000 |
原装现货热卖 |
|||
24+ |
TO-3PN |
10000 |
全新 |
||||
恩XP |
22+ |
TO-3P |
6000 |
十年配单,只做原装 |
|||
TECCOR达高 |
2026+ |
TO-3P |
100 |
原装正品 假一罚十! |
|||
Bourns Inc. |
25+ |
SOT-93 |
18746 |
样件支持,可原厂排单订货! |
BD745规格书下载地址
BD745参数引脚图相关
- C80
- c62f
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- c20001
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- bul128a
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- BD7541G
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- BD751
- BD750L5
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- BD750B
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- BD750
- BD746D
- BD746C
- BD746B
- BD746A
- BD746
- BD745D
- BD745C
- BD745B
- BD745A
- BD744D
- BD744C
- BD744B
- BD744A
- BD744
- BD743D
- BD743C
- BD743B
- BD743A
- BD743
- BD7411G
- BD738
- BD737
- BD736
- BD735
- BD734
- BD733L5
- BD733
- BD72A27
- BD726
- BD725
- BD724
- BD723
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DdatasheetPDF页码索引
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