isc Silicon NPN Power Transistor

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SWITCHMODE??Power Rectifier

. . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • Epoxy Meets UL94, VO at 1/

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Low leakage, platinum barrier, schottky rectifier diodes in a full pack plastic envelope featuring low forward voltage drop, absence of stored charge. and guaranteed reverse surge capability. The devices areintended foruse inswitched mode power supplies and high frequency circ

-5V INVERTING, NEGATIVE OUTPUT CURRENT-MODE PWM REGULATOR

DESCRIPTION The ST735 is a Bi-CMOS, inverting switch mode DC-DC regulator with internal Power MOSFETs that generates a fixed -5V output voltage from a 4V to 6.2V input voltage; is guaranteed an output current of 200mA for inputs greater than 4.5V. The quiescent current for this device is typicall

300kHz, -5V/ADJ INVERTING, NEGATIVE OUTPUT CURRENT-MODE PWM REGULATOR

DESCRIPTION The ST735S/ST735T is a Bi-CMOS, inverting switch mode DC-DC regulator with internal Power MOSFET that generates a fixed -5V (S version) or a negative adjustable (T version) output voltage from a 4V (3.5V for the 735T) to 6.2V input voltage (9V for the 735T); is guaranteed an output cu

300kHz, -5V/ADJ INVERTING, NEGATIVE OUTPUT CURRENT-MODE PWM REGULATOR

DESCRIPTION The ST735S/ST735T is a Bi-CMOS, inverting switch mode DC-DC regulator with internal Power MOSFET that generates a fixed -5V (S version) or a negative adjustable (T version) output voltage from a 4V (3.5V for the 735T) to 6.2V input voltage (9V for the 735T); is guaranteed an output cu