位置:首页 > IC中文资料第196页 > BD682T

型号 功能描述 生产厂家 企业 LOGO 操作
BD682T

Plastic Medium?뭁ower Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain − hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Cons

ONSEMI

安森美半导体

BD682T

封装/外壳:TO-225AA,TO-126-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP DARL 100V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Plastic Medium?뭁ower Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain − hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Cons

ONSEMI

安森美半导体

Plastic Medium-Power Silicon PNP Darlingtons

文件:87.44 Kbytes Page:4 Pages

ONSEMI

安森美半导体

封装/外壳:TO-225AA,TO-126-3 包装:卷带(TR) 描述:TRANS PNP DARL 100V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Plastic Medium-Power Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD

MOTOROLA

摩托罗拉

Band-switching diodes

DESCRIPTION Planar high performance band-switching diodes in a glass SOD80 SMD package. FEATURES • Continuous reverse voltage: max. 35 V • Continuous forward current: max. 100 mA • Low diode capacitance: max. 1.5 pF • Low diode forward resistance: max. 0.7 to 1.2 Ω. APPLICATION • Band-swit

PHILIPS

飞利浦

SCR

DESCRIPTION The TYN 682 ---> TYN 692 Family Silicon Controlled Rectifiers are high performance glass passivated chips technology. This general purpose Family Silicon Controlled Rectifiers is designed for power supply up to 400Hz on resistive or inductive load. FEATURES ■ HIGH SURGE CAPABILITY

STMICROELECTRONICS

意法半导体

INVERTING VOLTAGE DOUBLER

文件:80.51 Kbytes Page:6 Pages

TELCOM

INVERTING VOLTAGE DOUBLER

文件:80.51 Kbytes Page:6 Pages

TELCOM

BD682T产品属性

  • 类型

    描述

  • 型号

    BD682T

  • 功能描述

    达林顿晶体管 4A 100V 40W PNP

  • RoHS

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

更新时间:2026-7-22 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi
25+
TO-126
22412
正规渠道,免费送样。支持账期,BOM一站式配齐
ON
24+
CASE77
6000
onsemi
25+
TO-126
22360
样件支持,可原厂排单订货!
NEC
23+
SOP-8
69820
终端可以免费供样,支持BOM配单!
ON/安森美
22+
TO-126
6000
十年配单,只做原装
ON
26+
CASE77PBFR
188600
全新原厂原装正品现货 欢迎咨询

BD682T数据表相关新闻