Plastic Medium?뭁ower Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain − hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Cons

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Medium Power Darlington TR • Complement to BD675A, BD677A, BD679A and BD681 respectively

PNP DARLIGNTON POWER SILICON TRANSISTORS

PNP DARLIGNTON POWER SILICON TRANSISTORS For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUIVALENT TO MJE700, 702, 703.

Plastic Medium-Power Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD675/A-BD677/A-BD679/A-BD681/A Compli

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD675/A-BD677/A-BD679/A-BD681/A Compli

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD675A/677A/679A/681 • DARLINGTON • High DC current gain APPLICATIONS • For medium power linear and switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD675A/677A/679A/681 • DARLINGTON • High DC current gain APPLICATIONS • For medium power linear and switching applications

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The BD681, are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-126 plastic package. They are intended for use in medium power linar and switching applications The complementary PNP types are BD682, respectively.

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

PNP DARLIGNTON POWER SILICON TRANSISTORS

PNP DARLIGNTON POWER SILICON TRANSISTORS For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUIVALENT TO MJE700, 702, 703.

互补硅功率达林顿晶体管

The devices are manufactured in planar base island technology with monolithic Darlington configuration. • Good hFE linearity \n• Monolithic Darlington configuration with integrated antiparallel collector-emitter diode \n• High fT frequency;

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP DARL 100V 4A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

功率达林顿晶体管

Transistor

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

文件：252.33 Kbytes Page：6 Pages

Silicon PNP Darlington Power Transistor

文件：124.12 Kbytes Page：2 Pages

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS PNP DARL 100V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Medium Power Linear and Switching

文件：153 Kbytes Page：6 Pages

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD675/A-BD677/A-BD679/A-BD681/A Compli

PNP DARLIGNTON POWER SILICON TRANSISTORS

PNP DARLIGNTON POWER SILICON TRANSISTORS For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUIVALENT TO MJE700, 702, 703.

Plastic Medium?뭁ower Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain − hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Cons

Plastic Medium?뭁ower Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain − hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Cons

Plastic Medium?뭁ower Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain − hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Cons

Plastic Medium-Power Silicon PNP Darlingtons

文件：87.44 Kbytes Page：4 Pages

Plastic Medium-Power Silicon PNP Darlingtons

文件：87.44 Kbytes Page：4 Pages

Band-switching diodes

DESCRIPTION Planar high performance band-switching diodes in a glass SOD80 SMD package. FEATURES • Continuous reverse voltage: max. 35 V • Continuous forward current: max. 100 mA • Low diode capacitance: max. 1.5 pF • Low diode forward resistance: max. 0.7 to 1.2 Ω. APPLICATION • Band-swit

SCR

DESCRIPTION The TYN 682 ---> TYN 692 Family Silicon Controlled Rectifiers are high performance glass passivated chips technology. This general purpose Family Silicon Controlled Rectifiers is designed for power supply up to 400Hz on resistive or inductive load. FEATURES ■ HIGH SURGE CAPABILITY

INVERTING VOLTAGE DOUBLER

文件：80.51 Kbytes Page：6 Pages

INVERTING VOLTAGE DOUBLER

文件：80.51 Kbytes Page：6 Pages