BD682晶体管资料

  • BD682别名:BD682三极管、BD682晶体管、BD682晶体三极管

  • BD682生产厂家:德国AEG公司_美国摩托罗拉半导体公司_法国巴黎珊斯

  • BD682制作材料:Si-P+Darl+Di

  • BD682性质:低频或音频放大 (LF)_功率放大 (L)

  • BD682封装形式:直插封装

  • BD682极限工作电压:100V

  • BD682最大电流允许值:4A

  • BD682最大工作频率:>10MHZ

  • BD682引脚数:3

  • BD682最大耗散功率:40W

  • BD682放大倍数:β>750

  • BD682图片代号:B-21

  • BD682vtest:100

  • BD682htest:10000100

  • BD682atest:4

  • BD682wtest:40

  • BD682代换 BD682用什么型号代替:BD262B,FC50B,

BD682价格

参考价格:¥0.6488

型号:BD682 品牌:MULTICOMP 备注:这里有BD682多少钱,2026年最近7天走势,今日出价,今日竞价,BD682批发/采购报价,BD682行情走势销售排行榜,BD682报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BD682

Plastic Medium?뭁ower Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain − hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Cons

ONSEMI

安森美半导体

BD682

PNP DARLIGNTON POWER SILICON TRANSISTORS

PNP DARLIGNTON POWER SILICON TRANSISTORS For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUIVALENT TO MJE700, 702, 703.

CDIL

BD682

Plastic Medium-Power Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD

MOTOROLA

摩托罗拉

BD682

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Medium Power Darlington TR • Complement to BD675A, BD677A, BD679A and BD681 respectively

FAIRCHILD

仙童半导体

BD682

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD675/A-BD677/A-BD679/A-BD681/A Compli

COMSET

BD682

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD675/A-BD677/A-BD679/A-BD681/A Compli

COMSET

BD682

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD675A/677A/679A/681 • DARLINGTON • High DC current gain APPLICATIONS • For medium power linear and switching applications

ISC

无锡固电

BD682

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD675A/677A/679A/681 • DARLINGTON • High DC current gain APPLICATIONS • For medium power linear and switching applications

SAVANTIC

BD682

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The BD681, are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-126 plastic package. They are intended for use in medium power linar and switching applications The complementary PNP types are BD682, respectively.

TGS

BD682

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

STMICROELECTRONICS

意法半导体

BD682

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

STMICROELECTRONICS

意法半导体

BD682

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

STMICROELECTRONICS

意法半导体

BD682

PNP DARLIGNTON POWER SILICON TRANSISTORS

PNP DARLIGNTON POWER SILICON TRANSISTORS For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUIVALENT TO MJE700, 702, 703.

TEL

BD682

功率达林顿晶体管

THUNDERSOFT

中科创达

BD682

Transistor

COMSET

BD682

互补硅功率达林顿晶体管

STMICROELECTRONICS

意法半导体

BD682

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

文件:252.33 Kbytes Page:6 Pages

STMICROELECTRONICS

意法半导体

BD682

封装/外壳:TO-225AA,TO-126-3 包装:散装 描述:TRANS PNP DARL 100V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

BD682

封装/外壳:TO-225AA,TO-126-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP DARL 100V 4A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICS

意法半导体

BD682

Silicon PNP Darlington Power Transistor

文件:124.12 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BD682

Medium Power Linear and Switching

文件:153 Kbytes Page:6 Pages

ONSEMI

安森美半导体

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD675/A-BD677/A-BD679/A-BD681/A Compli

COMSET

PNP DARLIGNTON POWER SILICON TRANSISTORS

PNP DARLIGNTON POWER SILICON TRANSISTORS For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUIVALENT TO MJE700, 702, 703.

TEL

Plastic Medium?뭁ower Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain − hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Cons

ONSEMI

安森美半导体

Plastic Medium?뭁ower Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain − hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Cons

ONSEMI

安森美半导体

Plastic Medium?뭁ower Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain − hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Cons

ONSEMI

安森美半导体

Plastic Medium-Power Silicon PNP Darlingtons

文件:87.44 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Plastic Medium-Power Silicon PNP Darlingtons

文件:87.44 Kbytes Page:4 Pages

ONSEMI

安森美半导体

T-1 Subminiature Lamps

T-1 Subminiature Lamps T-1 Subminiature Short Type Lamps

GILWAY

INVERTING VOLTAGE DOUBLER

GENERAL DESCRIPTION The AMS682 is a CMOS charge pump converter that provides an inverted doubled output from a single positive supply. Requiring only three external capacitors for full circuit implementation the device has an on -board 12kHz (typical) oscillator which provides the clock. Low out

ADMOS

Zero voltage turn-on SCR output

文件:130.03 Kbytes Page:2 Pages

WILLOW

Carbon Composition Molded OD/OF Series (5 Tol.) OA Series (10)

文件:124.92 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

INVERTING VOLTAGE DOUBLER

文件:70.83 Kbytes Page:7 Pages

ADMOS

BD682产品属性

  • 类型

    描述

  • 型号

    BD682

  • 功能描述

    达林顿晶体管 PNP Power Darlington

  • RoHS

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

更新时间:2026-3-9 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
TO-126
2317
原厂订货渠道,支持BOM配单一站式服务
ST
03+
TO-126
20
一级代理,专注军工、汽车、医疗、工业、新能源、电力
HITACHI
23+
SOP
3580
全新原装假一赔十
22+
TO126
100000
代理渠道/只做原装/可含税
ST/意法
24+
SOT-32
860000
明嘉莱只做原装正品现货
ON(安森美)
23+
TO-225
10555
公司只做原装正品,假一赔十
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ONSEMI/安森美
25+
TO-126
45000
ONSEMI/安森美全新现货BD682即刻询购立享优惠#长期有排单订
MOT
23+
TO-126
50000
全新原装正品现货,支持订货
23+
1280

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