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BD678G价格

参考价格:¥1.5281

型号:BD678G 品牌:ONSemi 备注:这里有BD678G多少钱,2026年最近7天走势,今日出价,今日竞价,BD678G批发/采购报价,BD678G行情走势销售排行榜,BD678G报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BD678G

Plastic Medium?뭁ower Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain − hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Cons

ONSEMI

安森美半导体

BD678G

Plastic Medium-Power Silicon PNP Darlingtons

文件:87.44 Kbytes Page:4 Pages

ONSEMI

安森美半导体

BD678G

封装/外壳:TO-225AA,TO-126-3 包装:卷带(TR) 描述:TRANS PNP DARL 60V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Plastic Medium-Power Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD

MOTOROLA

摩托罗拉

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

STMICROELECTRONICS

意法半导体

Plastic Medium-Power Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD

MOTOROLA

摩托罗拉

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

STMICROELECTRONICS

意法半导体

FAST RECOVERY DIODE

FAST RECOVERY DIODE Repetitive voltage up to 4500 V Mean forward current 1690 A Surge current 27 kA

POSEICO

BD678G产品属性

  • 类型

    描述

  • 型号

    BD678G

  • 功能描述

    达林顿晶体管 4A 60V Bipolar Power PNP

  • RoHS

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

更新时间:2026-5-14 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
25+
TO-225-3
22360
样件支持,可原厂排单订货!
onsemi(安森美)
25+
TO-225-3
22412
正规渠道,免费送样。支持账期,BOM一站式配齐
ON/安森美
25+
SMD
20000
原装
ONSEMI
23+
SMD
880000
明嘉莱只做原装正品现货
ON/安森美
21+
SMD
30000
百域芯优势 实单必成 可开13点增值税
ON
24+
TO-225
8866
ON
22+
TO-126
20000
公司只有原装 品质保证
三年内
1983
只做原装正品
ON/安森美
23+
SMD
8000
只做原装现货
ON/安森美
23+
SMD
7000

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