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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BD5356G-TR | 丝印代码:RS;Free Delay Time Setting CMOS Voltage Detector IC Series Description ROHM’s BD52□□G/FVE and BD53□□G/FVE series are highly accurate, low current consumption reset IC series with a built-in delay circuit. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V, | ROHM 罗姆 | ||
BD5356G-TR | 丝印代码:RS;Free Delay Time Setting CMOS Voltage Detector IC Series Description ROHM’s BD52□□G/FVE and BD53□□G/FVE series are highly accurate, low current consumption reset IC series with a built-in delay circuit. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V, | ROHM 罗姆 | ||
BD5356G-TR | 丝印代码:RS;Free Delay Time Setting CMOS Voltage Detector IC Series Description ROHM’s BD52□□G/FVE and BD53□□G/FVE series are highly accurate, low current consumption reset IC series with a built-in delay circuit. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V, | ROHM 罗姆 | ||
BD5356G-TR | 丝印代码:RS;Delay Time Controlled by external Capacitor, Two output types Description ROHM’s BD52□□G/FVE and BD53□□G/FVE series are highly accurate, low current consumption reset IC series with a built-in delay circuit. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V, | ROHM 罗姆 | ||
BD5356G-TR | 丝印代码:RS;Free Delay Time Setting CMOS Voltage Detector IC Series Description ROHM’s BD52□□G/FVE and BD53□□G/FVE series are highly accurate, low current consumption reset IC series with a built-in delay circuit. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V, | ROHM 罗姆 | ||
BD5356G-TR | 丝印代码:RS;Free Delay Time Setting CMOS Voltage Detector IC Series Description ROHM’s BD52□□G/FVE and BD53□□G/FVE series are highly accurate, low current consumption reset IC series with a built-in delay circuit. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V, | ROHM 罗姆 | ||
BD5356G-TR | 丝印代码:RS;Free Delay Time Setting CMOS Voltage Detector IC Series Description ROHM’s BD52□□G/FVE and BD53□□G/FVE series are highly accurate, low current consumption reset IC series with a built-in delay circuit. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V, | ROHM 罗姆 | ||
BD5356G-TR | 丝印代码:RS;Highly accurate, low current consumption Voltage Detector ICs with a capacitor-controlled time delay. 文件:400.42 Kbytes Page:16 Pages | ROHM 罗姆 | ||
BD5356G-TR | 丝印代码:RS;Free Delay Time Setting CMOS Voltage Detector IC Series 文件:400.42 Kbytes Page:16 Pages | ROHM 罗姆 | ||
BD5356G-TR | 封装/外壳:SC-74A,SOT-753 包装:卷带(TR) 描述:IC SUPERVISOR 1 CHANNEL 5SSOP 集成电路(IC) 监控器 | ROHM 罗姆 | ||
ZENER DIODE CHIPS • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • ELECTRICALLY EQUIVALENT TO 1N5333B THRU 1N5379B • 5 WATT CAPABILITY WITH PROPER HEAT SINKING • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES, WITH THE EXCEPTION OF SOLDER REFLOW | CDI-DIODE | |||
HIGH POWER ZENER DIODE 6.8 VOLTS THRU 200 VOLTS 5.0W, 5 TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMZ5334B series silicon Zener diodes are voltage regulators, manufactured in an epoxy molded surface mount package, and designed for use in industrial, commercial, entertainment and computer applications. MARKING: SEE MARKING CODE ON ELECTRICAL CHARACTERIST | CENTRAL | |||
5 Watt Surface Mount Silicon Zener Diodes Features • Low profile package for surface mounting (flat handling surface for accurate placement) • Zener Voltage 3.3V to 200V • High Surge Current Capability • For available tolerances - see note 1 • Available on Tape and Reel (see EIA std RS-481) | MCC | |||
5 Watt Surface Mount Silicon Zener Diodes Features • Low profile package for surface mounting (flat handling surface for accurate placement) • Zener Voltage 3.3V to 200V • High Surge Current Capability • For available tolerances - see note 1 • Available on Tape and Reel (see EIA std RS-481) | MCC | |||
Silicon 5.0 Watt Zener Diodes Features ● Surface Mount Application ● 11 thru 200 Volt Voltage Range ● Built-in strain relief ● Glass passivated junction ● Low induct Mechanical Data ● Case: JEDEC DO-214AB Molded plastic over passivated junction ● Terminals solderable per MIL-STD-750, Method 2026 ● Standard Packaging: | MCC |
BD5356G-TR产品属性
- 类型
描述
- 型号
BD5356G-TR
- 功能描述
电压监测器/监控器 CMOS DETEC VOLT 5.6V
- RoHS
否
- 制造商
Texas Instruments
- 监测电压数
2
- 监测电压
Adjustable
- 输出类型
Open Drain
- 准确性
1 %
- 工作电源电压
1.5 V to 6.5 V
- 工作电源电流
1.8 uA
- 最大工作温度
+ 125 C
- 封装/箱体
SON-6
- 安装风格
SMD/SMT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM/罗姆 |
23+ |
NA |
2860 |
原装正品代理渠道价格优势 |
|||
ROHM(罗姆) |
2447 |
SSOP-5 |
105000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
ROHM |
21+ |
VSOF5 |
21000 |
一级代理进口原装!长期供应!绝对优势价格(诚信经营 |
|||
ROHM/罗姆 |
23+ |
NA |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
24+ |
N/A |
46000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
Rohm Semiconductor |
22+ |
5VSOF |
9000 |
原厂渠道,现货配单 |
|||
Rohm Semiconductor |
24+ |
5-SSOP |
65200 |
一级代理/放心采购 |
|||
ROHM |
21+ |
SSOP5 |
50 |
只做原装鄙视假货15118075546 |
|||
ROHM |
SMDDIP |
185600 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ROHM |
23+ |
NA |
256 |
专做原装正品,假一罚百! |
BD5356G-TR芯片相关品牌
BD5356G-TR规格书下载地址
BD5356G-TR参数引脚图相关
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- BD5353G
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- BD5353
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- BD5351G
- BD5351
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- BD5350
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- BD534B
- BD534A
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- BD5349
BD5356G-TR数据表相关新闻
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深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱:yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-25BD4F5FSLS33-缓冲器/驱动器
LSI逻辑公司提供以下驱动器/接收器输入/输出(的I / O),作为一般用途的I / O缓冲器细胞: •bd4f5fsls33 •bd4puf5fsls33 •bd4puodf5fsls33 •bd4puodf5fscls33 该I / O缓冲器提供芯片外,双向I/ O的applicationspecific信号集成电路(ASIC)的LSI逻辑芯片实现G12号™- P的0.13微米工艺技术。具有类似功能的I / O缓冲器提供一个不同的驱动程序选项的ASIC应用。
2013-3-5
DdatasheetPDF页码索引
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