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BD312晶体管资料
BD312别名：BD312三极管、BD312晶体管、BD312晶体三极管
BD312生产厂家：美国摩托罗拉半导体公司
BD312制作材料：Si-PNP
BD312性质：低频或音频放大 （LF）_功率放大 （L）
BD312封装形式：直插封装
BD312极限工作电压：60V
BD312最大电流允许值：10A
BD312最大工作频率：<1MHZ或未知
BD312引脚数：2
BD312最大耗散功率：150W
BD312放大倍数：
BD312图片代号：E-44
BD312vtest：60
BD312htest：999900
- BD312atest：10
BD312wtest：150
BD312代换 BD312用什么型号代替：BDW52A,3CD109C,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BD312 | 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 115 WATTS | MOTOROLA 摩托罗拉 |   | |
BD312 | Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • High DC current gain • Excellent safe operating area • Complement to type BD311 APPLICATIONS • Designed for power amplifier applications | ISC 无锡固电 | | |
BD312 | Silicon PNP Power Transistor DESCRIPTION • Excellent Safe Operating Area • DC Current Gain-hFE= 25(Min.)@lc = -5A • Collector-Emitter Saturation Voltage- :VCE(sat)=-1.0V(Max)@lc = -5A • Complement to Type BD311 APPLICATIONS • Designed for high quality amplifiers operating up to 60 watts into 4 ohm load. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BD312 | Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • High DC current gain • Excellent safe operating area • Complement to type BD311 APPLICATIONS • Designed for power amplifier applications | SAVANTIC | | |
BD312 | Silicon NPN Power Transistors 文件：111.48 Kbytes Page：3 Pages | SAVANTIC | | |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 115 WATTS | MOTOROLA 摩托罗拉 | | ||
Sequencing Hotswap Controllers General Description The HV302 and HV312 Hotswap Controllers perform current limiting, circuit breaker protection, over and under voltage detection power management functions during insertion of cards or modules into live backplanes and connectors. Theymaybe used in systems where active contro | SUTEX | | ||
N-Channel Silicon Junction Field Effect Transistor Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO–92 package. Features: • High Power Gain: 10dB Min at 400MHz • High Transconductance: 4000 µmho Min at 400MHz • Low Crss: 1pF Max • High (Yfs) / Ciss | NTE | | ||
TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo | STMICROELECTRONICS 意法半导体 | | ||
TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo | STMICROELECTRONICS 意法半导体 | | ||
Operational Amplifiers 文件：200.55 Kbytes Page：6 Pages | NSC 国半 | |
BD312产品属性
- 类型
描述
- 型号
BD312
- 制造商
SAVANTIC
- 制造商全称
Savantic, Inc.
- 功能描述
Silicon PNP Power Transistors
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
LAMBDA |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
ST |
24+ |
TO-3 |
200000 |
原装进口正口,支持样品 |
|||
EPCOS |
100 |
原装现货,价格优惠 |
|||||
XINGER |
24+ |
SMD |
2600 |
原装现货假一赔十 |
|||
ST |
26+ |
TO-3 |
60000 |
只有原装 可配单 |
|||
LAMBDA |
23+ |
模块 |
360 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
ST |
23+ |
TO-3 |
16900 |
正规渠道,只有原装! |
|||
PHI/ON |
24+ |
TO-3 |
56800 |
特价现货,下单送华为手机.香港 日本 新加坡 |
|||
solitron |
25+ |
500000 |
行业低价,代理渠道 |
||||
MOT |
23+ |
TO-3 |
8650 |
受权代理!全新原装现货特价热卖! |
BD312规格书下载地址
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DdatasheetPDF页码索引
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