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BD263B晶体管资料

  • BD263B别名:BD263B三极管、BD263B晶体管、BD263B晶体三极管

  • BD263B生产厂家:荷兰飞利浦公司_RTC_德国凡尔伏公司

  • BD263B制作材料:Si-N+Darl

  • BD263B性质:低频或音频放大 (LF)_功率放大 (L)

  • BD263B封装形式:直插封装

  • BD263B极限工作电压:120V

  • BD263B最大电流允许值:4A

  • BD263B最大工作频率:7MHZ

  • BD263B引脚数:3

  • BD263B最大耗散功率:36W

  • BD263B放大倍数:β>750

  • BD263B图片代号:B-21

  • BD263Bvtest:120

  • BD263Bhtest:7000000

  • BD263Batest:4

  • BD263Bwtest:36

  • BD263B代换 BD263B用什么型号代替:BD681,BD683,YZ1D,

型号 功能描述 生产厂家 企业 LOGO 操作

SMALL OUTLINE OPTOISOLATORS DARLINGTON OUTPUT NO BASE CONNECTION

Small Outline Optoisolators Darlington Output (No Base Connection) These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector, in a surface mountable, small outline, plastic package. No base connection for improved noise

MOTOROLA

摩托罗拉

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2500 Typ (NTE263) = 3500 T

NTE

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 25 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 175 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

POINN

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 25 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 175 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

POINN

Darlington Phototransistor

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PANASONIC

松下

更新时间:2026-5-14 14:31:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NTE
最新
TO220
7823
绝对进口原装现货库存特价销售
MIT全新
23+
DIP-16
39300
原厂授权一级代理,专业海外优势订货,价格优势、品种
26+
N/A
73000
一级代理-主营优势-实惠价格-不悔选择
NTE
25+
电联咨询
7800
公司现货,提供拆样技术支持
2022+
80
全新原装 货期两周

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