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BD246晶体管资料
BD246别名：BD246三极管、BD246晶体管、BD246晶体三极管
BD246生产厂家：美国得克萨斯仪表公司
BD246制作材料：Si-PNP
BD246性质：低频或音频放大 （LF）_功率放大 （L）
BD246封装形式：直插封装
BD246极限工作电压：45V
BD246最大电流允许值：10A
BD246最大工作频率：<1MHZ或未知
BD246引脚数：3
BD246最大耗散功率：80W
BD246放大倍数：
BD246图片代号：B-62
BD246vtest：45
BD246htest：999900
- BD246atest：10
BD246wtest：80
BD246代换 BD246用什么型号代替：BD214/45,BD250,BD258/45,TIP34,3CD10B,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BD246 | PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD245 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available | BOURNS 伯恩斯 |   | |
BD246 | PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS The BD246 series are PNP power transistors in a TO3PN envelope. They are the power transistors for power amplifier and high-speed-switching applications. The complementary is BD245, A, B, C Compliance to RoHS. | COMSET | | |
BD246 | isc Silicon PNP Power Transistor DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current | ISC 无锡固电 | | |
BD246 | Silicon PNP Power Transistor DESCRIPTION • Collector Current -IC= -10A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A -80V(Min)- BD246B; -100V(Min)- BD246C • Complement to Type BD245/A/B/C APPLICATIONS • Designed for use in general purpose power amp | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BD246 | PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD245 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available | POINN | | |
BD246 | Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current | SAVANTIC | | |
BD246 | PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD245 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available | TRSYS Transys Electronics | | |
BD246 | Transistor | COMSET | | |
BD246 | Silicon NPN Power Transistors 文件：146.68 Kbytes Page：3 Pages | SAVANTIC | | |
Silicon PNP Power Transistor DESCRIPTION • Collector Current -IC= -10A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A -80V(Min)- BD246B; -100V(Min)- BD246C • Complement to Type BD245/A/B/C APPLICATIONS • Designed for use in general purpose power amp | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD245 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available | POINN | | ||
isc Silicon PNP Power Transistor DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current | ISC 无锡固电 | | ||
PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS The BD246 series are PNP power transistors in a TO3PN envelope. They are the power transistors for power amplifier and high-speed-switching applications. The complementary is BD245, A, B, C Compliance to RoHS. | COMSET | | ||
PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD245 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available | BOURNS 伯恩斯 | | ||
PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD245 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available | TRSYS Transys Electronics | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current | SAVANTIC | | ||
PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD245 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available | TRSYS Transys Electronics | | ||
PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD245 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available | BOURNS 伯恩斯 | | ||
PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS The BD246 series are PNP power transistors in a TO3PN envelope. They are the power transistors for power amplifier and high-speed-switching applications. The complementary is BD245, A, B, C Compliance to RoHS. | COMSET | | ||
isc Silicon PNP Power Transistor DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current | ISC 无锡固电 | | ||
PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD245 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available | POINN | | ||
Silicon PNP Power Transistor DESCRIPTION • Collector Current -IC= -10A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A -80V(Min)- BD246B; -100V(Min)- BD246C • Complement to Type BD245/A/B/C APPLICATIONS • Designed for use in general purpose power amp | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current | SAVANTIC | | ||
Silicon PNP Power Transistor DESCRIPTION • Collector Current -IC= -10A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A -80V(Min)- BD246B; -100V(Min)- BD246C • Complement to Type BD245/A/B/C APPLICATIONS • Designed for use in general purpose power amp | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD245 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available | POINN | | ||
isc Silicon PNP Power Transistor DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current | ISC 无锡固电 | | ||
PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD245 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available | BOURNS 伯恩斯 | | ||
PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS The BD246 series are PNP power transistors in a TO3PN envelope. They are the power transistors for power amplifier and high-speed-switching applications. The complementary is BD245, A, B, C Compliance to RoHS. | COMSET | | ||
PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD245 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available | TRSYS Transys Electronics | | ||
Silicon NPN Power Transistors 文件：146.68 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：146.68 Kbytes Page：3 Pages | SAVANTIC | | ||
Transistor | COMSET | | ||
封装/外壳：TO-218-3 包装：管件 描述：TRANS PNP 80V 10A SOT93 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
Transistor | COMSET | | ||
Silicon NPN Power Transistors 文件：146.68 Kbytes Page：3 Pages | SAVANTIC | | ||
SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
封装/外壳：TO-218-3 包装：管件 描述：TRANS PNP 100V 10A SOT93 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
N-channel silicon junction field-effect transistors DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers | PHILIPS 飞利浦 | | ||
N-channel silicon junction field-effect transistors DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers | PHILIPS 飞利浦 | | ||
PNP video transistor DESCRIPTION PNP silicon transistor encapsulated in a 4-lead plastic SOT223 package. APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors. | PHILIPS 飞利浦 | | ||
VHF power MOS transistor DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to t | PHILIPS 飞利浦 | | ||
Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B | NTE | |
BD246产品属性
- 类型
描述
- 型号
BD246
- 功能描述
两极晶体管 - BJT 80W PNP Silicon
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Bourns Inc. |
25+ |
SOT-93 |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ST |
2026+ |
TO218 |
5686 |
原装正品 假一罚十! |
|||
ISC |
20+ |
TO-3PN |
15800 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
25+ |
TO-218 |
20000 |
原装，请咨询 |
|||
ST |
26+ |
TO-3P |
60000 |
只有原装 可配单 |
|||
ST |
24+ |
TO-218 |
15000 |
原装现货热卖 |
|||
ST |
25+23+ |
TO-126 |
76352 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
PH |
24+ |
TO-3P |
1 |
||||
Bourns Inc. |
25+ |
SOT-93 |
20948 |
样件支持,可原厂排单订货! |
|||
ST |
2015 |
TO-3P |
180 |
全新 发货1-2天 |
BD246芯片相关品牌
BD246规格书下载地址
BD246参数引脚图相关
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- BD245A
- BD245
- BD244CG
- BD244C
- BD244BG
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- BD244A
- BD244
- BD243CG
- BD243C
- BD243BG
- BD243B
- BD243A
- BD243
- BD242CG
- BD242C
- BD242BG
- BD242B
- BD242A
- BD242
- BD241C
- BD241B
- BD241A
- BD241
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DdatasheetPDF页码索引
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