丝印代码：BD238；TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD233/BD235/BD237 respectively

丝印代码：BD238；TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD233/BD235/BD237 respectively

Silicon PNP transistor in a TO-126F Plastic Package.

Descriptions Silicon PNP transistor in a TO-126F Plastic Package. Features Complementary pair with BD237. Applications Medium power linear and switching applications.

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD233/235 /237 APPLICATIONS • For medium power linear and switching applications

Silicon PNP Power Transistor

DESCRIPTION • DC Current Gain- : hFE=40(Min)@lc=-0.15A • Complement to Type BD233/235/237 APPLICATIONS • Designed for use in 5-10 watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION • DC Current Gain- : hFE=40(Min)@lc=0.15A • Complement to Type BD234/236/238 APPLICATIONS • Designedfor use in 5-10 watt audio amplifiers and drivers utilizing complementaryor quasi complementarycircuits.

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. The complementary PNP types are BD236 and BD238 respectively. ■ SGS-THOMSON PREFERRED SALESTYPES

Bipolar Transistor

The UTC BD238 is a PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc.

Medium Power Linear and Switching

Medium Power Linear and Switching Applications • Complement to BD 233/235/237 respectively

Plastic Medium Power Bipolar Transistors

Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc • Epoxy Meets UL 94 V0 @ 0.125 in • ESD Ratings: Human Body Model, 3B; >

-80V, PNP TRANSISTOR

DESCRIPTION The UTC BD238 is a PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc. FEATURES * High DC current gain * High collector-emitter breakdown voltage

EPITAXIAL SILICON POWER TRANSISTORS

EPITAXIAL SILICON POWER TRANSISTORS Intended for use in Medium Power Linear Switching Applications

SEMICONDUCTORS

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GERMANIOVE TRANZISTORY

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Medium Power Linear and Switching Applications

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晶体管

COMPLEMENTARY SILICON POWER TRANSISTORS

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TO-126双极型晶体管

Silicon NPN Power Transistors

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封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR） 描述：TRANS PNP 80V 2A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Plastic Medium Power Bipolar Transistors

Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc • Epoxy Meets UL 94 V0 @ 0.125 in • ESD Ratings: Human Body Model, 3B; >

Plastic Medium Power Bipolar Transistors

Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc • Epoxy Meets UL 94 V0 @ 0.125 in • ESD Ratings: Human Body Model, 3B; >

-80V, PNP TRANSISTOR

DESCRIPTION The UTC BD238 is a PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc. FEATURES * High DC current gain * High collector-emitter breakdown voltage

-80V, PNP TRANSISTOR

DESCRIPTION The UTC BD238 is a PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc. FEATURES * High DC current gain * High collector-emitter breakdown voltage

EPITAXIAL SILICON POWER TRANSISTORS

EPITAXIAL SILICON POWER TRANSISTORS Intended for use in Medium Power Linear Switching Applications

-80V, PNP TRANSISTOR

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-80V, PNP TRANSISTOR

文件：119.24 Kbytes Page：3 Pages

-80V, PNP TRANSISTOR

文件：119.24 Kbytes Page：3 Pages

-80V, PNP TRANSISTOR

文件：119.24 Kbytes Page：3 Pages

-80V, PNP TRANSISTOR

文件：119.24 Kbytes Page：3 Pages

Medium Power Linear and Switching Applications

文件：43.17 Kbytes Page：4 Pages

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS PNP 80V 2A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Amplifier Transistors

Amplifier Transistors NPN Silicon

Amplifier Transistors

Amplifier Transistors NPN Silicon

THREE-TERMINAL 5 A ADJUSTABLE VOLTAGE REGULATORS

DESCRIPTION The LM138/LM238/LM338 are adjustable 3-terminal positive voltage regulators capable of supplying in excess of 5A over a 1.2V to 32V output range. They are exceptionally easy to use and require only 2 resistors to set the output voltage. Careful circuit design has resulted in outstan

THREE-TERMINAL 5 A ADJUSTABLE VOLTAGE REGULATORS

DESCRIPTION The LM138/LM238/LM338 are adjustable 3-terminal positive voltage regulators capable of supplying in excess of 5A over a 1.2V to 32V output range. They are exceptionally easy to use and require only 2 resistors to set the output voltage. Careful circuit design has resulted in outstan

Silicon NPN Transistor Color TV, Horizontal Output

Description: The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use in deflection circuits. Features: • VCEX = 1500V • Safe Operating Area @ 50µs = 20A, 400V