丝印代码：BD235；TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD234/BD236/BD238 respectively

丝印代码：BD235；TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD234/BD236/BD238 respectively

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range TJ : 150℃ Tstg: -65℃ to +150℃

Silicon NPN transistor in a TO-126F Plastic Package.

Descriptions Silicon NPN transistor in a TO-126F Plastic Package. Features Complementary pair with BD236. Applications Medium power linear and switching applications.

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range TJ : 150℃ Tstg: -65℃ to +150℃

NPN power transistors

Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are BD236 and BD238 respectively. Features ■ NPN transistors Applications ■ Audio,

Low voltage NPN power transistors

Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD238. Features ■ Low saturation voltage ■ NPN transistors Applications ■ Audio,

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. The complementary PNP types are BD236 and BD238 respectively. ■ SGS-THOMSON PREFERRED SALESTYPES

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively

EPITAXIAL SILICON POWER TRANSISTORS

EPITAXIAL SILICON POWER TRANSISTORS Intended for use in Medium Power Linear Switching Applications

Single Bipolar Transistor

Features • This product is available in AEC-Q101 Compliant and PPAP Capable also. Note: For AEC-Q101 compliant products, please use suffix -AQ in the part number while ordering. Applications • Intended for use in Medium Power Linear Switching Applications

NPN Epitaxial Planar Transistors

NPN Epitaxial Planar Transistors P/b Lead(Pb)-Free

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range TJ : 150℃ Tstg: -65℃ to +150℃

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD234 /236 /238 APPLICATIONS • For medium power linear and switching applications

Silicon NPN Power Transistor

DESCRIPTION • DC Current Gain- : hFE=40(Min)@lc=0.15A • Complement to Type BD234/236/238 APPLICATIONS • Designedfor use in 5-10 watt audio amplifiers and drivers utilizing complementaryor quasi complementarycircuits.

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION • DC Current Gain- : hFE=40(Min)@lc=0.15A • Complement to Type BD234/236/238 APPLICATIONS • Designedfor use in 5-10 watt audio amplifiers and drivers utilizing complementaryor quasi complementarycircuits.

NPN Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Power Dissipation: PCM =1.25W, Ta=25°C • Collector Current : IC=2A • Complement to BD234/236/238 respectively • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD234 /236 /238 APPLICATIONS • For medium power linear and switching applications

Silicon NPN Power Transistors

文件：102.42 Kbytes Page：3 Pages

GERMANIOVE TRANZISTORY

文件：1.9422 Mbytes Page：14 Pages

Medium Power Transistor

TO-126双极型晶体管

中等功率双极型晶体管

COMPLEMENTARY SILICON POWER TRANSISTORS

文件：265.99 Kbytes Page：5 Pages

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR） 描述：TRANS NPN 60V 2A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN power transistors

Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are BD236 and BD238 respectively. Features ■ NPN transistors Applications ■ Audio,

Low voltage NPN power transistors

Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD238. Features ■ Low saturation voltage ■ NPN transistors Applications ■ Audio,

EPITAXIAL SILICON POWER TRANSISTORS

EPITAXIAL SILICON POWER TRANSISTORS Intended for use in Medium Power Linear Switching Applications

COMPLEMENTARY SILICON POWER TRANSISTORS

文件：265.99 Kbytes Page：5 Pages

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 60V 2A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN video transistor

DESCRIPTION NPN video transistor in a SOT128B (TO-202) plastic package. PNP complement: BFQ255A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • CRT amplifier buf

NPN video transistor

DESCRIPTION NPN video transistor in a SOT128B (TO-202) plastic package. PNP complement: BFQ255A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • CRT amplifier buf

Silicon NPN Transistor Final RF Power Output

Description: The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.

Precision Temperature Sensors

文件：291.37 Kbytes Page：14 Pages

Precision Temperature Sensors

文件：291.37 Kbytes Page：14 Pages