NPN Epitaxial Planar Transistors

NPN Epitaxial Planar Transistors P/b Lead(Pb)-Free

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range TJ : 150℃ Tstg: -65℃ to +150℃

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD234 /236 /238 APPLICATIONS • For medium power linear and switching applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD234 /236 /238 APPLICATIONS • For medium power linear and switching applications

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range TJ : 150℃ Tstg: -65℃ to +150℃

EPITAXIAL SILICON POWER TRANSISTORS

EPITAXIAL SILICON POWER TRANSISTORS Intended for use in Medium Power Linear Switching Applications

Silicon NPN transistor in a TO-126F Plastic Package.

Descriptions Silicon NPN transistor in a TO-126F Plastic Package. Features Complementary pair with BD234. Applications Medium power linear and switching applications.

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively

NPN Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Power Dissipation: PCM =1.25W, Ta=25°C • Collector Current : IC=2A • Complement to BD234/236/238 respectively • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range TJ : 150℃ Tstg: -65℃ to +150℃

Silicon NPN Power Transistor

DESCRIPTION • DC Current Gain- : hFE=40(Min)@lc=0.15A • Complement to Type BD234/236/238 APPLICATIONS • Designedfor use in 5-10 watt audio amplifiers and drivers utilizing complementaryor quasi complementarycircuits.

TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD234/BD236/BD238 respectively

Single Bipolar Transistor

Features • This product is available in AEC-Q101 Compliant and PPAP Capable also. Note: For AEC-Q101 compliant products, please use suffix -AQ in the part number while ordering. Applications • Intended for use in Medium Power Linear Switching Applications

TO-126双极型晶体管

中等功率双极型晶体管

晶体管

GERMANIOVE TRANZISTORY

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Silicon NPN Power Transistors

文件：102.42 Kbytes Page：3 Pages

TO-126 Plastic-Encapsulate Transistors

文件：285.3 Kbytes Page：3 Pages

EPITAXIAL SILICON POWER TRANSISTORS

EPITAXIAL SILICON POWER TRANSISTORS Intended for use in Medium Power Linear Switching Applications

TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD234/BD236/BD238 respectively

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR） 描述：TRANS NPN 45V 2A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR） 描述：TRANS NPN 45V 2A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

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