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BD231晶体管资料

  • BD231别名:BD231三极管、BD231晶体管、BD231晶体三极管

  • BD231生产厂家:荷兰飞利浦公司_RTC_德国凡尔伏公司

  • BD231制作材料:Si-PNP

  • BD231性质:低频或音频放大 (LF)_功率放大 (L)

  • BD231封装形式:直插封装

  • BD231极限工作电压:100V

  • BD231最大电流允许值:1.5A

  • BD231最大工作频率:<1MHZ或未知

  • BD231引脚数:3

  • BD231最大耗散功率:12.5W

  • BD231放大倍数

  • BD231图片代号:B-21

  • BD231vtest:100

  • BD231htest:999900

  • BD231atest:1.5

  • BD231wtest:12.5

  • BD231代换 BD231用什么型号代替:BD140,BD170,BD180,BD238,BD442,3CA5D,

型号 功能描述 生产厂家 企业 LOGO 操作
BD231

PNP power transistor

DESCRIPTION PNP power transistor in a TO-126; SOT32 plastic package. NPN complements: BD226, BD228 and BD230. FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). ​​​​​​​ APPLICATIONS • Driver stages in television circuits.

PHILIPS

飞利浦

BD231

PNP power transistors

DESCRIPTION PNP power transistor in a TO-126; SOT32 plastic package. NPN complements: BD226, BD228 and BD230. FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). ​​​​​​​ APPLICATIONS • Driver stages in television circuits.

PHILIPS

飞利浦

BD231

isc Silicon PNP Power Transistor

DESCRIPTION • DC Current Gain- : hFE= 40(Min)@ IC= -0.15A • Complement to Type BD226/228/230 APPLICATIONS • Designed for use in driver stages in television circuits.

ISC

无锡固电

BD231

Silicon PNP Power Transistor

DESCRIPTION • DC Current Gain- : hFE= 40(Min)@ IC= -0.15A • Complement to Type BD226/228/230 APPLICATIONS • Designed for use in driver stages in television circuits.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BD231

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD230 • High current (Max:-1.5A) • Low voltage (Max: -80V) APPLICATIONS • Drive stage in TV circuits

SAVANTIC

BD231

Silicon NPN Power Transistors

文件:109.97 Kbytes Page:3 Pages

SAVANTIC

BD231

PNP power transistor

ETC

知名厂家

BD231

Trans GP BJT PNP 80V 1.5A 3-Pin TO-126

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

1ch 4 A High Speed Low-side Gate Driver

General Description BD2310G is 1ch Low-side Gate Driver, which can drive external Nch-FET and IGBT at high speed. BD2310G can supply output current 4 A at small package SSOP5. This driver has the VREF pin for external input logic supply voltage and this range is 2.0 V to 5.5 V. As a protect

ROHM

罗姆

1ch 4 A High Speed Low-side Gate Driver

General Description BD2310G is 1ch Low-side Gate Driver, which can drive external Nch-FET and IGBT at high speed. BD2310G can supply output current 4 A at small package SSOP5. This driver has the VREF pin for external input logic supply voltage and this range is 2.0 V to 5.5 V. As a protect

ROHM

罗姆

Single-Channel Ultra-Fast Gate Driver

Features ◼ Gate Driver Voltage Range 4.5 V to 5.5 V ◼ Minimum Input Pulse Width 1.25 ns (220 pF load) ◼ Typical Rise Time 0.65 ns (220 pF load) ◼ Typical Fall Time 0.70 ns (220 pF load) ◼ Built-in Undervoltage Lockout (UVLO) between VCC and GND ◼ Inverting and Non-inverting Inputs ◼ Small

ROHM

罗姆

Single-Channel Ultra-Fast Gate Driver

This product is a rank product for the industrial equipment market. This is the best product for use in these applications. BD2311ANVX-LB is a single gate driver capable of driving GaN HEMTs at Ultra-Fast with narrow pulses, which can contribute to the long-range and high accuracy of LiDAR. It can s • Gate Driver Voltage Range 4.5 V to 5.5 V\n• Typical Rise Time 0.65 ns (220 pF load)\n• Built-in Undervoltage Lockout (UVLO) between VCC and GND\n• Small Package SSON06RX2020;

ROHM

罗姆

丝印代码:D2311D;Single-Channel Ultra-Fast Gate Driver

Features ◼ Gate Driver Voltage Range 4.5 V to 5.5 V ◼ Minimum Input Pulse Width 1.25 ns (220 pF load) ◼ Typical Rise Time 0.65 ns (220 pF load) ◼ Typical Fall Time 0.70 ns (220 pF load) ◼ Built-in Undervoltage Lockout (UVLO) between VCC and GND ◼ Inverting and Non-inverting Inputs ◼ Small

ROHM

罗姆

Single-Channel Ultra-Fast Gate Driver For Automotive

Features ◼ AEC-Q100 Qualified(Note 1) ◼ Gate Driver Voltage Range 4.5 V to 5.5 V ◼ Minimum Input Pulse Width 1.25 ns (220 pF load) ◼ Typical Rise Time 0.65 ns (220 pF load) ◼ Typical Fall Time 0.70 ns (220 pF load) ◼ Built-in Undervoltage Lockout (UVLO) between VCC and GND ◼ Inverting and

ROHM

罗姆

丝印代码:D2311C;Single-Channel Ultra-Fast Gate Driver For Automotive

Features ◼ AEC-Q100 Qualified(Note 1) ◼ Gate Driver Voltage Range 4.5 V to 5.5 V ◼ Minimum Input Pulse Width 1.25 ns (220 pF load) ◼ Typical Rise Time 0.65 ns (220 pF load) ◼ Typical Fall Time 0.70 ns (220 pF load) ◼ Built-in Undervoltage Lockout (UVLO) between VCC and GND ◼ Inverting and

ROHM

罗姆

Single-Channel Ultra-Fast Gate Driver

Features ◼ Gate Driver Voltage Range 4.5 V to 5.5 V ◼ Minimum Input Pulse Width 1.25 ns (220 pF load) ◼ Typical Rise Time 0.65 ns (220 pF load) ◼ Typical Fall Time 0.70 ns (220 pF load) ◼ Built-in Undervoltage Lockout (UVLO) between VCC and GND ◼ Inverting and Non-inverting Inputs ◼ CSP Pa

ROHM

罗姆

丝印代码:AE0;Single-Channel Ultra-Fast Gate Driver

Features ◼ Gate Driver Voltage Range 4.5 V to 5.5 V ◼ Minimum Input Pulse Width 1.25 ns (220 pF load) ◼ Typical Rise Time 0.65 ns (220 pF load) ◼ Typical Fall Time 0.70 ns (220 pF load) ◼ Built-in Undervoltage Lockout (UVLO) between VCC and GND ◼ Inverting and Non-inverting Inputs ◼ CSP Pa

ROHM

罗姆

封装/外壳:SC-74A,SOT-753 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:1CH 4A HIGH SPEED LOW-SIDE GATE 集成电路(IC) 栅极驱动器

ROHM

罗姆

Fast Settling, Wideband Buff-Amp??(Av = 짹1 to 짹5)

文件:396.7 Kbytes Page:6 Pages

NSC

国半

Fast Settling, Wideband Buff-Amp??(Av = 짹1 to 짹5)

文件:396.7 Kbytes Page:6 Pages

NSC

国半

Fast Settling, Wideband Buff-Amp??(Av = 짹1 to 짹5)

文件:396.7 Kbytes Page:6 Pages

NSC

国半

Precision Voltage-to-Frequency Converters

文件:368.44 Kbytes Page:15 Pages

NSC

国半

Precision Voltage-to-Frequency Converters

文件:280 Kbytes Page:16 Pages

NSC

国半

BD231产品属性

  • 类型

    描述

  • Configuration:

    Single

  • Maximum Collector Base Voltage:

    100V

  • Maximum Collector Emitter Saturation Voltage:

    0.8@0.1A@1AV

  • Maximum Collector Emitter Voltage:

    80V

  • Maximum DC Collector Current:

    1.5A

  • Maximum Emitter Base Voltage:

    5V

  • Maximum Operating Temperature:

    150°C

  • Maximum Power Dissipation:

    12500mW

  • Maximum Transition Frequency:

    50(Typ)MHz

  • Type:

    PNP

更新时间:2026-5-14 19:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISC
20+
TO-126
15800
原装优势主营型号-可开原型号增税票
ANAREN/安伦
2450+
9850
只做原装正品现货!或订货假一赔十!
ROHM/罗姆
25+
HTSOP-J8
24500
罗姆全系列在售
ROHM
25+
2000
只做原装鄙视假货15118075546
ANAREN
24+
SMD
12800
ANAREN专营绝对进口原装假一赔十
ROHM/罗姆
23+
HTSOP-J8
15800
专业配单,原装正品假一罚十,代理渠道价格优
PHI
25+
50PCS
2800
原装现货!可长期供货!
恩XP
24+
55
恩XP
22+
TO-126
20000
只做原装
ANAREN
21+
N/A
3537
全新 发货1-2天

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