1ch 4 A High Speed Low-side Gate Driver

General Description BD2310G is 1ch Low-side Gate Driver, which can drive external Nch-FET and IGBT at high speed. BD2310G can supply output current 4 A at small package SSOP5. This driver has the VREF pin for external input logic supply voltage and this range is 2.0 V to 5.5 V. As a protect

1ch 4A 高速 低边栅极驱动器

BD2310G是能高速驱动外接Nch-FET和IGBT的1ch低边栅极驱动器。采用SSOP5的小型封装，可提供4A的输出电流。设有从外部施加输入逻辑电源电压的VREF引脚，可用范围为2.0V~5.5V。作为保护功能，在VCC-GND之间搭载低输入误动作防止电路（UVLO）。 • Gate Drive Voltage Range 4.5V to 18V\n• Built-in Undervoltage Lockout (UVLO) between VCC and GND\n• Input Logic Voltage Range 2.0V to 5.5V\n• In-phase Output with Input signal\n• Small Package SSOP5;

1ch 4 A High Speed Low-side Gate Driver

General Description BD2310G is 1ch Low-side Gate Driver, which can drive external Nch-FET and IGBT at high speed. BD2310G can supply output current 4 A at small package SSOP5. This driver has the VREF pin for external input logic supply voltage and this range is 2.0 V to 5.5 V. As a protect

封装/外壳：SC-74A，SOT-753 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：1CH 4A HIGH SPEED LOW-SIDE GATE 集成电路（IC） 栅极驱动器

Silicon NPN Transistor High Voltage, High Speed Switch

Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ■ NEW SERIES, ENHANCED PERFORMANCE ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING ■ HIGH VOLTAGE CA

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件：662.5 Kbytes Page：29 Pages

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件：662.5 Kbytes Page：29 Pages

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件：662.5 Kbytes Page：29 Pages