isc Silicon NPN Power Transistor

DESCRIPTION • DC Current Gain- : hFE= 40(Min)@ IC= 0.15A • Complement to Type BD227/229/231 APPLICATIONS • Designed for use in driver stages in television circuits.

Silicon NPN Power Transistor

DESCRIPTION • DC Current Gain- : hFE= 40(Min)@ IC= 0.15A • Complement to Type BD227/229/231 APPLICATIONS • Designed for use in driver stages in television circuits.

Trans GP BJT NPN 45V 1.5A 3-Pin TO-126

丝印代码：XT；0.3A Current Limit High Side Switch ICs

General Description BD22621G-M is a low on-resistance N-channel MOSFET high-side power switch, optimized for Universal Serial Bus (USB) applications. BD22621G-M is equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start. Features  AEC-

0.3A Current Limit High Side Switch ICs

General Description BD22621G-M is a low on-resistance N-channel MOSFET high-side power switch, optimized for Universal Serial Bus (USB) applications. BD22621G-M is equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start. Features  AEC-

Current Limit High Side Switch ICs

General Description BD226xG-M series are low on-resistance N-channel MOSFET high-side power switches, optimized for Universal Serial Bus (USB) applications. BD226xG-M series are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start. F

过电流检测高边开关IC

BD2262G-M中一个通道内置了用于通用串行总线(USB)电源线的高边开关。电源开关部1个电路内置了低导通电阻的N通道MOSFET。还内置了过电流限制、过热保护、低电压锁定、软启动等功能。 · AEC-Q100 Qualified \n· Over Current Protection \n· Built-in Low ON-Resistance (Typ 120mΩ) N-Channel MOSFET \n· Reverse Current Protection when Power Switch Off \n· Thermal Shutdown \n· Under-Voltage Lockout \n· Open-Drain Error Flag Output \n· Output Discharge Function \n· Soft Start Circuit \n· C;

Current Limit High Side Switch ICs

General Description BD226xG-M series are low on-resistance N-channel MOSFET high-side power switches, optimized for Universal Serial Bus (USB) applications. BD226xG-M series are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start. F

丝印代码：XU；0.76A Current Limit High Side Switch ICs

General Description BD22641G-M is a low on-resistance N-channel MOSFET high-side power switch, optimized for Universal Serial Bus (USB) applications. BD22641G-M is equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start. Features  AEC-

0.76A 过电流检测高边开关IC

BD22641G-M中一个通道内置了用于通用串行总线(USB)电源线的高边开关。电源开关部1个电路内置了低导通电阻的N通道MOSFET。还内置了过电流检测、过热保护、低电压锁定、软启动等功能。 • AEC-Q100 Qualified\n• Over Current Threshold: 0.76A\n• Built-in Low ON-Resistance (Typ 120mΩ) N-Channel MOSFET\n• Reverse Current Protection when Power Switch Off\n• Thermal Shutdown\n• Under-Voltage Lockout\n• Open-Drain Error Flag Output\n• Output Discharge Function\n• Soft Start Circuit\n• Cont;

0.76A Current Limit High Side Switch ICs

General Description BD22641G-M is a low on-resistance N-channel MOSFET high-side power switch, optimized for Universal Serial Bus (USB) applications. BD22641G-M is equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start. Features  AEC-

Current Limit High Side Switch ICs

General Description BD226xG-M series are low on-resistance N-channel MOSFET high-side power switches, optimized for Universal Serial Bus (USB) applications. BD226xG-M series are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start. F

Current Limit High Side Switch ICs

General Description BD226xG-M series are low on-resistance N-channel MOSFET high-side power switches, optimized for Universal Serial Bus (USB) applications. BD226xG-M series are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start. F

Current Limit High Side Switch ICs

General Description BD226xG-M series are low on-resistance N-channel MOSFET high-side power switches, optimized for Universal Serial Bus (USB) applications. BD226xG-M series are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start. F

Current Limit High Side Switch ICs

General Description BD226xG-M series are low on-resistance N-channel MOSFET high-side power switches, optimized for Universal Serial Bus (USB) applications. BD226xG-M series are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start. F

Current Limit High Side Switch ICs

General Description BD226xG-M series are low on-resistance N-channel MOSFET high-side power switches, optimized for Universal Serial Bus (USB) applications. BD226xG-M series are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start. F

Current Limit High Side Switch ICs

General Description BD226xG-M series are low on-resistance N-channel MOSFET high-side power switches, optimized for Universal Serial Bus (USB) applications. BD226xG-M series are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start. F

Current Limit High Side Switch ICs

General Description BD226xG-M series are low on-resistance N-channel MOSFET high-side power switches, optimized for Universal Serial Bus (USB) applications. BD226xG-M series are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start. F

Current Limit High Side Switch ICs

General Description BD226xG-M series are low on-resistance N-channel MOSFET high-side power switches, optimized for Universal Serial Bus (USB) applications. BD226xG-M series are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start. F

Current Limit High Side Switch ICs

General Description BD226xG-M series are low on-resistance N-channel MOSFET high-side power switches, optimized for Universal Serial Bus (USB) applications. BD226xG-M series are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start. F

丝印代码：Z0；Current Limit High Side Switch ICs

文件：616.01 Kbytes Page：37 Pages

封装/外壳：SC-74A，SOT-753 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR SWITCH N-CHAN 1:1 5SSOP 集成电路（IC） 配电开关，负载驱动器

封装/外壳：SC-74A，SOT-753 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR SWITCH N-CHAN 1:1 5SSOP 集成电路（IC） 配电开关，负载驱动器

丝印代码：Z1；Current Limit High Side Switch ICs

文件：616.01 Kbytes Page：37 Pages

丝印代码：Z2；Current Limit High Side Switch ICs

文件：616.01 Kbytes Page：37 Pages

丝印代码：Z3；Current Limit High Side Switch ICs

文件：616.01 Kbytes Page：37 Pages

丝印代码：Z4；Current Limit High Side Switch ICs

文件：616.01 Kbytes Page：37 Pages

AEC-Q100 Qualified

文件：486.08 Kbytes Page：26 Pages

AEC-Q100 Qualified

文件：486.08 Kbytes Page：26 Pages

NPN video transistor

DESCRIPTION NPN silicon transistor encapsulated in a 4-lead plastic SOT223 package. APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors.

Germanium PNP Transistor Audio Power Amp

Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high–power output applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . 35V Collector–Emitter Voltage (RB

SILICON TRIACS

Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)

SILICON TRIACS

Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)

SILICON TRIACS

Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)