EPITAXIAL SILICON POWER TRANSISTORS

BD175, 177, 179 NPN PLASTIC POWER TRANSISTORS BD176, 178, 180 PNP PLASTIC POWER TRANSISTORS Medium Power Liner and Switching Applications

Silicon PNP Power Transistors

DESCRIPTION With TO-126 package ·Complement to type BD175 /177 /179 APPLICATIONS ·For medium power linear and switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD175 /177 /179 APPLICATIONS • For medium power linear and switching applications

Medium Power Linear and Switching Applications

Applications • Complement to BD 175/177/179 respectively

BD176: PNP Epitaxial Silicon Transistor

BD176 中等功率线性和开关应用。\n 分别作为 BD 175/177/179 的补充器件;

Single Bipolar Transistor

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Silicon NPN Power Transistors

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EPITAXIAL SILICON POWER TRANSISTORS

BD175, 177, 179 NPN PLASTIC POWER TRANSISTORS BD176, 178, 180 PNP PLASTIC POWER TRANSISTORS Medium Power Liner and Switching Applications

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS PNP 45V 3A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS PNP 45V 3A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.