丝印代码：BD139-10；NPN Epitaxial Silicon Transistor

Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching

丝印代码：BD139-10；NPN Epitaxial Silicon Transistor

Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching

NPN power transistors

DESCRIPTION NPN power transistor in a TO-126; SOT32 plastic package. PNP complements: BD136, BD138 and BD140 FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages in hi-fi amplifiers and television circuits.

Power Transistors NPN Silicon 45,60,80 Volts

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • DC Current Gain - hFE = 40 (Min) @IC =

NPN Plastic Encapsulated Transistor

FEATURES • High current • Complement to BD136, BD138 and BD140

NPN SILICON TRANSISTORS

NPN Silicon Transistors For AF driver and output stages of medium performance

NPN Plastic Encapsulated Transistor

FEATURES High current Complement to BD136, BD138 and BD140

Complementary low voltage transistor

Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140. Fe

Complementary low voltage transistor

Features ■ Products are pre-selected in DC current gain Application ■ General purpose Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits.

NPN Plastic Encapsulated Transistor

FEATURES High current Complement to BD136, BD138 and BD140

BD139-10 - 单晶体管 双极, NPN, 80 V, 12.5 W, 1.5 A, 63 hFE

The BD139-10 is a NPN Transistor with 80V collector-emitter voltage and 12.5W power dissipation. ·Collector-base voltage(Vcbo = 100V)\n·Emitter-base voltage(Vebo = 5V);

Trans GP BJT NPN 80V 1.5A 3-Pin TO-126

80V,1.5A,1.25W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

NPN Transistor

文件：313.58 Kbytes Page：2 Pages

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 1.5A SOT32 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN SILICON TRANSISTORS

文件：76.42 Kbytes Page：4 Pages

Complementary low voltage transistor

文件：157.51 Kbytes Page：9 Pages

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR） 描述：TRANS NPN 80V 1.5A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Krimptite??Ring Tongue Terminal for 14-16 AWG Wire

文件：151.06 Kbytes Page：2 Pages