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BD138G价格

参考价格:¥1.1570

型号:BD138G 品牌:ONSemi 备注:这里有BD138G多少钱,2026年最近7天走势,今日出价,今日竞价,BD138G批发/采购报价,BD138G行情走势销售排行榜,BD138G报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BD138G

Plastic Medium Power Silicon PNP Transistor

Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • Pb−Free Packages are Available* • DC Current Gain − hFE = 40 (Min) @

ONSEMI

安森美半导体

BD138G

Plastic Medium-Power Silicon PNP Transistors

文件:86.87 Kbytes Page:4 Pages

ONSEMI

安森美半导体

BD138G

封装/外壳:TO-225AA,TO-126-3 包装:管件 描述:TRANS PNP 60V 1.5A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

PNP SILICON TRANSISTOR

文件:136.98 Kbytes Page:3 Pages

UTC

友顺

PNP SILICON TRANSISTOR

文件:136.98 Kbytes Page:3 Pages

UTC

友顺

PNP SILICON TRANSISTOR

文件:136.98 Kbytes Page:3 Pages

UTC

友顺

PNP SILICON TRANSISTOR

文件:136.98 Kbytes Page:3 Pages

UTC

友顺

PNP SILICON TRANSISTOR

文件:136.98 Kbytes Page:3 Pages

UTC

友顺

PNP SILICON TRANSISTOR

文件:136.98 Kbytes Page:3 Pages

UTC

友顺

Plastic Medium Power Silicon PNP Transistor

1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

MOTOROLA

摩托罗拉

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

NEC

瑞萨

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava

NEC

瑞萨

BD138G产品属性

  • 类型

    描述

  • 型号

    BD138G

  • 功能描述

    两极晶体管 - BJT 1.5A 60V 12.5W PNP

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2026-8-4 16:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ONSEMI
23+
TO-126
1206
全新 发货1-2天
ON
26+
CASE77PBFR
188600
全新原厂原装正品现货 欢迎咨询
ON
26+
TO126
86720
全新原装正品价格最实惠 假一赔百
ON/安森美
2026+
TO126
5000
原装正品 假一罚十!
ON(安森美)
26+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON(安森美)
26+
NA
60000
只有原装 可配单
ONSEMI/安森美
2540+
TO-225-3
9875
只做原装正品现货或订货假一赔十!
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
ONSEMI/安森美
25+
TO-220F
32000
ONSEMI/安森美全新特价BD138G即刻询购立享优惠#长期有货
三年内
1983
只做原装正品

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