丝印代码：BD137-16；NPN Epitaxial Silicon Transistor

Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching

丝印代码：BD137-16；NPN Epitaxial Silicon Transistor

Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching

NPN Plastic Encapsulated Transistor

FEATURES High current Complement to BD136, BD138 and BD140

NPN power transistors

DESCRIPTION NPN power transistor in a TO-126; SOT32 plastic package. PNP complements: BD136, BD138 and BD140 FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages in hi-fi amplifiers and television circuits.

Power Transistors NPN Silicon 45,60,80 Volts

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • DC Current Gain - hFE = 40 (Min) @IC =

NPN Plastic Encapsulated Transistor

FEATURES • High current • Complement to BD136, BD138 and BD140

NPN Plastic Encapsulated Transistor

FEATURES High current Complement to BD136, BD138 and BD140

Single Bipolar Transistor

Features • This product is available in AEC-Q101 Qualified and PPAP Capable also. Applications • Driver stages in hi-fi amplifier and television circuit. Discription Designed for use as Audio Amplifier and Drivers Utilizing

中等功率双极型晶体管

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR） 描述：TRANS NPN 60V 1.5A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个