丝印代码：BD136；TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD135, BD137 And BD139

丝印代码：BD136；TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD135, BD137 And BD139

Complementary low voltage transistor

Features ■ Products are pre-selected in DC current gain Application ■ General purpose Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits.

Complementary low voltage transistor

Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140. Fe

PNP SILICON TRANSISTORS

POWER TRANSISTORS PNP SILICON

PNP General Purpose Transistor

FEATURES High Current

PNP SILICON TRANSISTORS

Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140. Fe

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • High current • Complement to type BD135/137/139 APPLICATIONS • Driver stages in high-fidelity amplifiers and television circuits

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High Current ● Complement To BD135, BD137 And BD139

Silicon PNP Power Transistor

DESCRIPTION • DC Current Gain- : hFE=40(Min)@lc=-0.15A • Collector-Emitter Sustaining Voltage - : VCEO(sus)= -45V(Min) • Complement to type BD135 APPLICATIONS • Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·High current ·Complement to type BD135/137/139 APPLICATIONS ·Driver stages in high-fidelity amplifiers and television circuits

PNP General Purpose Transistor

FEATURES • High Current

Medium Power Linear and Switching Applications

Features • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching

PNP Epitaxial Silicon Transistor

Features • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching

Medium Power Linear and Switching Applications

Features • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching

Plastic Medium Power Silicon PNP Transistor

Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • Pb−Free Packages are Available* • DC Current Gain − hFE = 40 (Min) @

Medium Power Linear and Switching Applications

Features • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching

Medium Power Linear and Switching Applications

Features • Complement to BD135, BD137 and BD139 respectively Applications Medium Power Linear and Switching Applications

PNP Epitaxial Silicon Transistor

Applications • Complement to BD135, BD137 and BD139 Respectively • These are Pb−Free Devices

PNP power transistors

DESCRIPTION PNP power transistor in a TO-126; SOT32 plastic package. NPN complements: BD135, BD137 and BD139. FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • General purpose power applications, e.g. driver stages in hi-fi amplifiers and televisi

PNP SILICON TRANSISTOR

DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor, designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. The complementary NPN types are the BD135/BD137/ BD139.

EPITAXIAL PLANAR PNP TRANSISTOR

GENERAL PURPOSE APPLICATION. FEATURES • High Current. (Max. : -1.5A) • Low Voltage (Max. : -45V) • DC Current Gain : hFE=40Min. @IC=-0.15A • Complementary to BD135.

EPITAXIAL SILICON POWER TRANSISTORS

PNP EPITAXIAL SILICON POWER TRANSISTORS Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD135, BD137, BD139

Plastic Medium Power Silicon PNP Transistor

1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

PNP Transistor TO-126

Feature: • PNP Plastic Power Transistors • Medium Power Linear and Switching Applications Description Transistor, PNP, TO-126

PNP General Purpose Transistor

FEATURES High Current

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: -1.5 A Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon PNP transistor in a TO-126F Plastic Package.

Descriptions Silicon PNP transistor in a TO-126F Plastic Package. Features Complement to BD135. Applications Medium power linear and switching applications.

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: -1.5 A Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

PNP PLASTIC POWER TRANSISTORS

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: -1.5 A Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

PNP硅晶体管

These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits.\n\n The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140. • Products are pre-selected in DC current gain;

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS PNP 45V 1.5A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 45V 1.5A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Bipolar Transistor

晶体管

Medium Power Linear and Switching Applications

文件：53.08 Kbytes Page：4 Pages

TRANSISTOR (PNP)

文件：216.56 Kbytes Page：2 Pages

SILICON PLANAR EPITAXIAL POWER TRANSISTORS.

文件：74.34 Kbytes Page：3 Pages

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

GERMANIOVE TRANZISTORY

文件：1.9422 Mbytes Page：14 Pages

Silicon NPN Power Transistors

文件：112.89 Kbytes Page：3 Pages

PNP SILICON TRANSISTORS

文件：76.38 Kbytes Page：4 Pages

Complementary low voltage transistor

文件：157.51 Kbytes Page：9 Pages

PNP Epitaxial Silicon Transistor

Applications • Complement to BD135, BD137 and BD139 Respectively • These are Pb−Free Devices

Medium Power Linear and Switching Applications

Features • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching

PNP power transistors

DESCRIPTION PNP power transistor in a TO-126; SOT32 plastic package. NPN complements: BD135, BD137 and BD139. FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • General purpose power applications, e.g. driver stages in hi-fi amplifiers and televisi

PNP General Purpose Transistor

FEATURES High Current

PNP General Purpose Transistor

FEATURES • High Current

PNP General Purpose Transistor

FEATURES • High Current

PNP SILICON TRANSISTORS

POWER TRANSISTORS PNP SILICON

PNP General Purpose Transistor

FEATURES High Current

PNP Epitaxial Silicon Transistor

Applications • Complement to BD135, BD137 and BD139 Respectively • These are Pb−Free Devices

PNP Epitaxial Silicon Transistor

Applications • Complement to BD135, BD137 and BD139 Respectively • These are Pb−Free Devices

Medium Power Linear and Switching Applications

Features • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching

Medium Power Linear and Switching Applications

Features • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching

PNP power transistors

DESCRIPTION PNP power transistor in a TO-126; SOT32 plastic package. NPN complements: BD135, BD137 and BD139. FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • General purpose power applications, e.g. driver stages in hi-fi amplifiers and televisi

PNP General Purpose Transistor

FEATURES • High Current

PNP General Purpose Transistor

FEATURES • High Current

PNP SILICON TRANSISTORS

POWER TRANSISTORS PNP SILICON

PNP General Purpose Transistor

FEATURES High Current