Medium Power Linear and Switching Applications

Features • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching

1.5 A, 45 V PNP Power Bipolar Junction Transistor

This series of plastic, 1.5 A, 45 V PNP Power Bipolar Junction Transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • Minimun DC Current Gain - hFE = 100 @ IC = 0.15 A\n• Lower base drive current required\n• BD136, BD138, BD140 are complementary with BD135, BD137, BD139 respectively;

PNP Epitaxial Silicon Transistor

Applications • Complement to BD135, BD137 and BD139 Respectively • These are Pb−Free Devices

PNP Epitaxial Silicon Transistor

Applications • Complement to BD135, BD137 and BD139 Respectively • These are Pb−Free Devices

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 45V 1.5A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 45V 1.5A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAKTM Power Modules)

FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package • High surge capability • Glass passivated chips • Modules uses high voltage power thyristor/diodes in three    basic configurations • Simple mounting • UL a

STATSHIELD BAG, SHIELDING, METAL-IN CONSTRUCTION, ZIPPER, .0030 (.0762mm)

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T1 / CEPT / ISDN-PRI Reinforced Insulation

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