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BD135晶体管资料
BD135(-6...-16)别名:BD135(-6...-16)三极管、BD135(-6...-16)晶体管、BD135(-6...-16)晶体三极管
BD135(-6...-16)生产厂家:德国AEG公司_德国椤茨标准电器公司_荷兰飞利浦公司
BD135(-6...-16)制作材料:Si-NPN
BD135(-6...-16)性质:低频或音频放大 (LF)_功率放大 (L)
BD135(-6...-16)封装形式:直插封装
BD135(-6...-16)极限工作电压:45V
BD135(-6...-16)最大电流允许值:1.5A
BD135(-6...-16)最大工作频率:<1MHZ或未知
BD135(-6...-16)引脚数:3
BD135(-6...-16)最大耗散功率:12.5W
BD135(-6...-16)放大倍数:
BD135(-6...-16)图片代号:B-21
BD135(-6...-16)vtest:45
BD135(-6...-16)htest:999900
- BD135(-6...-16)atest:1.5
BD135(-6...-16)wtest:12.5
BD135(-6...-16)代换 BD135(-6...-16)用什么型号代替:BD165,BD175,BD226,BD233,BD437,3DA1B,
BD135价格
参考价格:¥0.3695
型号:BD135 品牌:STMICROELECTRONICS 备注:这里有BD135多少钱,2024年最近7天走势,今日出价,今日竞价,BD135批发/采购报价,BD135行情走势销售排行榜,BD135报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
BD135 | NPNpowertransistors DESCRIPTION NPNpowertransistorinaTO-126;SOT32plasticpackage.PNPcomplements:BD136,BD138andBD140 FEATURES •Highcurrent(max.1.5A) •Lowvoltage(max.80V). APPLICATIONS •Driverstagesinhi-fiamplifiersandtelevisioncircuits. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | ||
BD135 | NPNSILICONTRANSISTORS Description TheseepitaxialplanartransistorsaremountedintheSOT-32plasticpackage.Theyaredesignedforaudioamplifiersanddriversutilizingcomplementaryorquasi-complementarycircuits.TheNPNtypesaretheBD135andBD139,andthecomplementaryPNPtypesaretheBD136andBD140. Fe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
BD135 | PlasticMediumPowerSiliconNPNTransistor PlasticMediumPowerSiliconNPNTransistor ...designedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. •DCCurrentGain—hFE=40(Min)@IC=0.15Adc •BD135,137,139arecomplementarywithBD136,138,140 | MotorolaMotorola, Inc 摩托罗拉 | ||
BD135 | NPNSILICONTRANSISTORS NPNSiliconTransistors ForAFdriverandoutputstagesofmediumperformance | SIEMENS Siemens Ltd | ||
BD135 | MediumPowerLinearandSwitchingApplications Features •ComplementtoBD136,BD138andBD140respectively Applications •MediumPowerLinearandSwitching | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
BD135 | Plastic-EncapsulatedTransistors TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1.25W(Tamb=25℃) Collectorcurrent ICM:1.5A Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | ||
BD135 | SiliconNPNPowerTransistors DESCRIPTION •WithTO-126package •Highcurrent •ComplementtotypeBD136/138/140 APPLICATIONS •Driverstagesinhigh-fidelityamplifiers andtelevisioncircuits | SAVANTIC Savantic, Inc. | ||
BD135 | PlasticMediumPowerSiliconNPNTransistor PlasticMediumPowerSiliconNPNTransistor Thisseriesofplastic,medium−powersiliconNPNtransistorsaredesignedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •Pb−FreePackagesareAvailable •DCCurrentGain−hFE=40(Min)@ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
BD135 | EPITAXIALPLANARNPNTRANSISTOR GENERALPURPOSEAPPLICATION. FEATURES •HighCurrent.(Max.:1.5A) •LowVoltage(Max.:45V) •DCCurrentGain:hFE=40Min.@IC=0.15A •ComplementarytoBD136. | KECKEC CORPORATION KEC株式会社 | ||
BD135 | PowerTransistorsNPNSilicon45,60,80Volts Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •DCCurrentGain-hFE=40(Min)@IC=150mAdc •ComplementarywithBD136,BD138,BD140 | MCCMicro Commercial Components 美微科美微科半导体公司 | ||
BD135 | NPNSILICONTRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORBD135,BD137,andBD139areNPNSiliconEpitaxialPlanarTransistorsdesignedforaudioamplifierandswitchingapplications. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | ||
BD135 | SiliconNPNPowerTransistors DESCRIPTION •WithTO-126package •Highcurrent •ComplementtotypeBD136/138/140 APPLICATIONS •Driverstagesinhigh-fidelityamplifiers andtelevisioncircuits | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
BD135 | TO-126Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●HighCurrent ●ComplementToBD136,BD138AndBD140 | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | ||
BD135 | TRANSISTOR(NPN) TRANSISTOR(NPN) FEATURES ◾HighCurrent(1.5A) ◾LowVoltage(80V) | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | ||
BD135 | TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1.25W(Tamb=25℃) Collectorcurrent ICM:1.5A Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | ||
BD135 | NPNPlasticEncapsulatedTransistor FEATURES •Highcurrent •ComplementtoBD136,BD138andBD140 | SECOS SeCoS Halbleitertechnologie GmbH | ||
BD135 | NPNEPITAXIALSILICONPOWERTRANSISTORS NPNEPITAXIALSILICONPOWERTRANSISTORS DesignedforuseasAudioAmplifierandDriversUtilizing ComplementaryBD136,BD138,BD140 | CDIL CDIL | ||
BD135 | SiliconNPNtransistorinaTO-126FPlasticPackage. Descriptions SiliconNPNtransistorinaTO-126FPlasticPackage. Features ComplementtoBD136. Applications Mediumpowerlinearandswitchingapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | ||
BD135 | HighCurrent TRANSISTOR(NPN) FEATURES •HighCurrent(1.5A) •LowVoltage(80V) | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
BD135 | TO-126Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●HighCurrent ●ComplementToBD136,BD138AndBD140 | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | ||
BD135 | TRANSISTOR(NPN) TRANSISTOR(NPN) FEATURES ●HighCurrent | FS First Silicon Co., Ltd | ||
BD135 | Complementarylowvoltagetransistor Description TheseepitaxialplanartransistorsaremountedintheSOT-32plasticpackage.Theyaredesignedforaudioamplifiersanddriversutilizingcomplementaryorquasi-complementarycircuits.TheNPNtypesaretheBD135andBD139,andthecomplementaryPNPtypesaretheBD136andBD140. Fe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
BD135 | SILICONPLANAREPITAXIALPOWERTRANSISTORS SILICONPLANAREPITAXIALPOWERTRANSISTORS. TheBD136-BD138-BD140arePNPTransistors Theyarerecommendedfordriverstagesinhi-fiamplifiersandtelevisioncircuits. TheyaremountedinJedecTO-126plasticpackage. NPNcomplementsareBD135-BD137-BD139. CompliancetoRoHS. | COMSET Comset Semiconductor | ||
BD135 | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | ||
BD135 | SiliconNPNPowerTransistors 文件:111.81 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | ||
BD135 | SiliconNPNPowerTransistor 文件:186.38 Kbytes Page:3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
BD135 | Complementarylowvoltagetransistor 文件:157.51 Kbytes Page:9 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
BD135 | NPNSILICONTRANSISTORS 文件:76.42 Kbytes Page:4 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
BD135 | 封装/外壳:TO-225AA,TO-126-3 包装:散装 描述:TRANS NPN 45V 1.5A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
BD135 | 封装/外壳:TO-225AA,TO-126-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 45V 1.5A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
Complementarylowvoltagetransistor Features ■Productsarepre-selectedinDCcurrentgain Application ■Generalpurpose Description Theseepitaxialplanartransistorsaremountedin theSOT-32plasticpackage.Theyaredesigned foraudioamplifiersanddriversutilizing complementaryorquasi-complementarycircuits. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
TO-126Plastic-EncapsulateTransistors FEATURES HighCurrent ComplementToBD136,BD138AndBD140 | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
NPNpowertransistors DESCRIPTION NPNpowertransistorinaTO-126;SOT32plasticpackage.PNPcomplements:BD136,BD138andBD140 FEATURES •Highcurrent(max.1.5A) •Lowvoltage(max.80V). APPLICATIONS •Driverstagesinhi-fiamplifiersandtelevisioncircuits. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPNSILICONTRANSISTORS NPNSiliconTransistors ForAFdriverandoutputstagesofmediumperformance | SIEMENS Siemens Ltd | |||
PowerTransistorsNPNSilicon45,60,80Volts Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •DCCurrentGain-hFE=40(Min)@IC= | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
NPNPlasticEncapsulatedTransistor FEATURES •Highcurrent •ComplementtoBD136,BD138andBD140 | SECOS SeCoS Halbleitertechnologie GmbH | |||
NPNEpitaxialSiliconTransistor Features •ComplementtoBD136,BD138andBD140respectively Applications •MediumPowerLinearandSwitching | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
MediumPowerLinearandSwitchingApplications Features •ComplementtoBD136,BD138andBD140respectively Applications •MediumPowerLinearandSwitching | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
NPNSILICONTRANSISTORS NPNSiliconTransistors ForAFdriverandoutputstagesofmediumperformance | SIEMENS Siemens Ltd | |||
NPNpowertransistors DESCRIPTION NPNpowertransistorinaTO-126;SOT32plasticpackage.PNPcomplements:BD136,BD138andBD140 FEATURES •Highcurrent(max.1.5A) •Lowvoltage(max.80V). APPLICATIONS •Driverstagesinhi-fiamplifiersandtelevisioncircuits. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
Complementarylowvoltagetransistor Features ■Productsarepre-selectedinDCcurrentgain Application ■Generalpurpose Description Theseepitaxialplanartransistorsaremountedin theSOT-32plasticpackage.Theyaredesigned foraudioamplifiersanddriversutilizing complementaryorquasi-complementarycircuits. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
NPNPlasticEncapsulatedTransistor FEATURES •Highcurrent •ComplementtoBD136,BD138andBD140 | SECOS SeCoS Halbleitertechnologie GmbH | |||
Complementarylowvoltagetransistor Description TheseepitaxialplanartransistorsaremountedintheSOT-32plasticpackage.Theyaredesignedforaudioamplifiersanddriversutilizingcomplementaryorquasi-complementarycircuits.TheNPNtypesaretheBD135andBD139,andthecomplementaryPNPtypesaretheBD136andBD140. Fe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
PowerTransistorsNPNSilicon45,60,80Volts Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •DCCurrentGain-hFE=40(Min)@IC= | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
NPNEpitaxialSiliconTransistor Features •ComplementtoBD136,BD138andBD140respectively Applications •MediumPowerLinearandSwitching | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
NPNEpitaxialSiliconTransistor Features •ComplementtoBD136,BD138andBD140respectively Applications •MediumPowerLinearandSwitching | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
NPNPlasticEncapsulatedTransistor FEATURES •Highcurrent •ComplementtoBD136,BD138andBD140 | SECOS SeCoS Halbleitertechnologie GmbH | |||
PowerTransistorsNPNSilicon45,60,80Volts Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •DCCurrentGain-hFE=40(Min)@IC= | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
NPNSILICONTRANSISTORS NPNSiliconTransistors ForAFdriverandoutputstagesofmediumperformance | SIEMENS Siemens Ltd | |||
NPNEpitaxialSiliconTransistor Features •ComplementtoBD136,BD138andBD140respectively Applications •MediumPowerLinearandSwitching | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
PlasticMediumPowerSiliconNPNTransistor PlasticMediumPowerSiliconNPNTransistor Thisseriesofplastic,medium−powersiliconNPNtransistorsaredesignedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •Pb−FreePackagesareAvailable •DCCurrentGain−hFE=40(Min)@ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
NPNSiliconEpitaxialPowerTransistor NPNSILICONEPITAXIALPOWERTRANSISTOR ThesedevicesaredesignedasAudioAmplifier andDriversUtilizing. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
TO-126Plastic-EncapsulateTransistors FEATURES HighCurrent ComplementToBD136,BD138AndBD140 | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
NPNSILICONTRANSISTORS 文件:76.42 Kbytes Page:4 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Complementarylowvoltagetransistor 文件:157.51 Kbytes Page:9 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
NPNEpitaxialSiliconTransistor 文件:142.43 Kbytes Page:5 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
NPNPlasticEncapsulatedTransistor 文件:85.87 Kbytes Page:2 Pages | SECOS SeCoS Halbleitertechnologie GmbH | |||
iscSiliconNPNPowerTransistor 文件:255.34 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPNSILICONTRANSISTORS 文件:76.42 Kbytes Page:4 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
NPNEpitaxialSiliconTransistor 文件:142.43 Kbytes Page:5 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |
BD135产品属性
- 类型
描述
- 型号
BD135
- 功能描述
两极晶体管 - BJT NPN Audio Amplifier
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法半导体 |
21+ |
SOT-32-3 |
8800 |
公司只做原装正品 |
|||
ST/意法 |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
ST(意法半导体) |
23+ |
TO-126 |
942 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
onsemi |
23+ |
TO-225AA,TO-126-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
ON/安森美 |
24+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
|||
UTC/友顺 |
23+ |
NA/ |
18570 |
原装现货,当天可交货,原型号开票 |
|||
ST/意法 |
22+ |
SOT-32 |
100000 |
代理渠道/只做原装/可含税 |
|||
ON |
15+ |
TO126 |
79 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
2021/2022+ |
NA |
8000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
BD135规格书下载地址
BD135参数引脚图相关
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
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- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BDM
- BD1540
- BD154
- BD153
- BD152
- BD151
- BD150C
- BD150B
- BD150A
- BD149(-6...-16)
- BD148(-6...-16)
- BD145
- BD144
- BD142(-4...-7)
- BD141
- BD140(-6...-10)
- BD139(-6...-10)
- BD138G
- BD138-6
- BD1386
- BD13816
- BD13810
- BD138(-6...-10)
- BD138
- BD137T
- BD137G
- BD137-6
- BD137(-6...-16)
- BD137
- BD136G
- BD136-6
- BD1366
- BD13616
- BD13610
- BD136(-6...-16)
- BD136
- BD135TG
- BD135T
- BD135G
- BD135-6
- BD135(-6...-16)
- BD134
- BD133
- BD1321G
- BD132
- BD131
- BD130Y
- BD130
- BD12AV2
- BD12AV
- BD12A08
- BD129
- BD128
- BD127
- BD124
- BD122-1
- BD122
- BD121
- BD120
- BD119
- BD118
- BD117
- BD116
- BD115
- BD113
- BD112
- BD111A
- BD110
- BD10KA5
BD135数据表相关新闻
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原装现货
2019-9-11
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