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BD131晶体管资料
BD131别名：BD131三极管、BD131晶体管、BD131晶体三极管
BD131生产厂家：英国Mullard有限公司_荷兰飞利浦公司_德国凡尔伏公
BD131制作材料：Si-NPN
BD131性质：低频或音频放大 （LF）_功率放大 （L）
BD131封装形式：直插封装
BD131极限工作电压：70V
BD131最大电流允许值：3A
BD131最大工作频率：<1MHZ或未知
BD131引脚数：3
BD131最大耗散功率：15W
BD131放大倍数：
BD131图片代号：B-21
BD131vtest：70
BD131htest：999900
- BD131atest：3
BD131wtest：15
BD131代换 BD131用什么型号代替：BD237,BD189,BD441,3DA96C,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BD131 | NPN power transistor DESCRIPTION NPN power transistor in a TO-126; SOT32 plastic package. PNP complement: BD132. FEATURES • High current (max. 3 A) • Low voltage (max. 45 V). APPLICATIONS • General purpose power applications. | PHILIPS 飞利浦 |   | |
BD131 | SILICON EPITAXIAL POWER TRANSISTORS SILICON EPITAXIAL POWER TRANSISTORS General Purpose Medium Power Applications | CDIL | | |
BD131 | SILICON PLANAR EPITAXIAL POWER TRANSISTORS SILICON PLANAR EPITAXIAL POWER TRANSISTORS The BD132are PNN transistors mounted in Jedec TO-126 plastic package. Medium power applications. NPN complements are BD131 . | COMSET | | |
BD131 | SILICON PLANAR EPITAXIAL POWER TRANSISTORS SILICON PLANAR EPITAXIAL POWER TRANSISTORS The BD132are PNN transistors mounted in Jedec TO-126 plastic package. Medium power applications. NPN complements are BD131 . | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BD131 | Silicon NPN Power Transistors DESCRIPTION · Complement to type BD132 · With TO-126 package · High current (Max: 3A) · Low voltage (Max: 45V) APPLICATIONS · For general purpose power applications | SAVANTIC | | |
BD131 | Silicon NPN Power Transistors DESCRIPTION · • Complement to type BD132 • With TO-126 package • High current (Max: 3A) • Low voltage (Max: 45V) APPLICATIONS • For general purpose power applications | ISC 无锡固电 | | |
BD131 | Silicon NPN Power Transistors 文件：110.46 Kbytes Page：3 Pages | SAVANTIC | | |
BD131 | Transistor | COMSET | | |
BD131 | SILICON PLANAR EPITAXIAL POWER TRANSISTORS 文件：62.58 Kbytes Page：2 Pages | COMSET | | |
BD131 | SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
BD131 | Single Bipolar Transistor 文件：191.54 Kbytes Page：2 Pages | MULTICOMP 易络盟 | | |
SILICON EPITAXIAL POWER TRANSISTORS SILICON EPITAXIAL POWER TRANSISTORS General Purpose Medium Power Applications | CDIL | | ||
SILICON PLANAR EPITAXIAL POWER TRANSISTORS 文件：62.58 Kbytes Page：2 Pages | COMSET | | ||
isc Silicon NPN Power Transistor 文件：256.05 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
PNP SILICON TRANSISTOR 文件：136.98 Kbytes Page：3 Pages | UTC 友顺 | | ||
PNP SILICON TRANSISTOR 文件：136.98 Kbytes Page：3 Pages | UTC 友顺 | | ||
PNP SILICON TRANSISTOR 文件：136.98 Kbytes Page：3 Pages | UTC 友顺 | | ||
PNP SILICON TRANSISTOR 文件：136.98 Kbytes Page：3 Pages | UTC 友顺 | | ||
PNP SILICON TRANSISTOR 文件：136.98 Kbytes Page：3 Pages | UTC 友顺 | | ||
PNP SILICON TRANSISTOR 文件：136.98 Kbytes Page：3 Pages | UTC 友顺 | | ||
PNP SILICON TRANSISTOR 文件：136.98 Kbytes Page：3 Pages | UTC 友顺 | | ||
PNP SILICON TRANSISTOR 文件：136.98 Kbytes Page：3 Pages | UTC 友顺 | | ||
POWER TRANSISTORS(8.0A,60-100V,70W) PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS | MOSPEC 统懋 | | ||
L-BAND SPDT SWITCH DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us | NEC 瑞萨 | | ||
L-BAND DPDT MMIC SWITCH DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava | NEC 瑞萨 | | ||
L-BAND SPDT SWITCH DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us | NEC 瑞萨 | | ||
L-BAND SPDT SWITCH DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us | NEC 瑞萨 | |
BD131产品属性
- 类型
描述
- 型号
BD131
- 制造商
STMicroelectronics
- 功能描述
NPN power transistor pair,BD131/BD132 3A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
22+ |
TO-126 |
20000 |
公司只有原装 品质保证 |
|||
ISC |
20+ |
TO-126 |
15800 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
24+ |
TO-126 |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
PHI |
05+ |
原厂原装 |
134 |
只做全新原装真实现货供应 |
|||
ST |
25+ |
TO126 |
20000 |
原装，请咨询 |
|||
飞利蒲 |
24+ |
TO-126 |
2000 |
||||
ST |
23+ |
TO126 |
16900 |
正规渠道,只有原装! |
|||
ST |
26+ |
TO126 |
60000 |
只有原装 可配单 |
|||
ST |
26+ |
QFN |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
恩XP |
23+ |
TO-126 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
BD131规格书下载地址
BD131参数引脚图相关
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- BD113
- BD112
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DdatasheetPDF页码索引
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