NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * High gain and low saturation voltages COMPLEMENTARY TYPE – BCX69 PARTMARKING DETAIL – BCX68 – CE BCX68-16 – CC BCX68-25 – CD

NPN Silicon AF Transistors

NPN Silicon AF Transistors • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BCX69 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

NPN Silicon AF Transistors (For general AF applications High collector current)

NPN Silicon AF Transistors ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCX 69 (PNP)

For general AF applications

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20 V, 2 A NPN medium power transistors

Features and benefits  High current  Two current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

20 V, 2 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Two current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal and electrical conductivity • Leadless very small SMD plastic package with medium power capability • Qualified accor

20 V, 2 A NPN medium power transistors

Features and benefits * High collector current capability IC and ICM * Two current gain selections * Reduced Printed-Circuit Board (PCB) area requirements * Leadless very small SMD plastic package with medium power capability * Exposed heat sink for excellent thermal and electrical conduc

20 V, 2 A NPN medium power transistors

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20 V, 2 A NPN medium power transistors

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