NPN medium power transistor

DESCRIPTION NPN medium power transistor in a SOT223 plastic package. PNP complement: BCP69. FEATURES • High current (max. 1 A) • Low voltage (max. 20 V). APPLICATIONS • General purpose switching and amplification under high current conditions.

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * Suitable for AF drivers and output stages * High collector current and Low VCE(sat) COMPLEMENTARY TYPE - BCP69 PARTMARKING DETAIL - BCP68 BCP68 - 25

NPN Silicon AF Transistor

NPN Silicon AF Transistor ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP69 (PNP)

NPN medium power transistor; 20 V, 1 A

NPN Silicon AF Transistor

NPN Silicon AF Transistor ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP69 (PNP)

NPN Silicon AF Transistor (For general AF application High collector current High current gain)

NPN Silicon AF Transistor ● For general AF application ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP 69 (PNP)

20 V, 2 A NPN medium power transistors

Features and benefits  High current  Two current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

NPN medium power transistor 20 V, 1 A

20 V, 2 A NPN medium power transistors

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NPN Transistors

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20V,1A,General Purpose NPN Bipolar Transistor

Small Signal Bipolar Transistors

20 V, 2 A NPN medium power transistor

20 V, 2 A NPN medium power transistors

1. General description NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Two current gain selections • High power dissipation capability • Qualified accordin

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 20V 2A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS NPN 20V 2A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

20 V, 2 A NPN medium power transistors

Features and benefits  High current  Two current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

20 V, 2 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Two current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal and electrical conductivity • Leadless very small SMD plastic package with medium power capability • Qualified accor

20 V, 2 A NPN medium power transistors

Features and benefits * High collector current capability IC and ICM * Two current gain selections * Reduced Printed-Circuit Board (PCB) area requirements * Leadless very small SMD plastic package with medium power capability * Exposed heat sink for excellent thermal and electrical conduc

20 V, 2 A NPN medium power transistors

文件：1.18878 Mbytes Page：23 Pages

20 V, 2 A NPN medium power transistors

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