NPN medium power transistors

DESCRIPTION NPN medium power transistor in a SOT89 plastic package. PNP complements: BCX51, BCX52 and BCX53. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages of audio and video amplifiers.

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX 51 … BCX 53 (PNP)

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

NPN Medium Power Transistors

Features ● High current (max. 1 A). ● Low voltage (max. 80 V).

NPN Plastic-Encapsulate Transistor

FEATURES • High current • Low voltage • Medium power general purposes • Driver stages of audio amplifiers.

NPN Plastic-Encapsulate Transistor

FEATURES • High current • Low voltage • Medium power general purposes • Driver stages of audio amplifiers.

80 V, 1 A NPN medium power transistors

SURFACE MOUNT NPN SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications.

NPN Silicon AF Transistors

NPN Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX51...BCX53 (PNP)

NPN Silicon AF Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX51…BCX53(PNP)

Low Voltage

TRANSISTOR (NPN) FEATURES ● PNP Complements to BCX51,BCX52,BCX53 ● Low Voltage ● High Current APPLICATIONS ● Driver Stages of Audio Amplifiers

80 V, 1 A NPN medium power transistors

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● PNP Complements to BCX51,BCX52,BCX53 ● Low Voltage ● High Current APPLICATIONS ● Driver Stages of Audio Amplifiers

NPN Silicon AF Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types:BCX51…BCX53(PNP)

NPN Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power Dissipation: PCM=0.5W (Tamb=25°C) • Collector Current: ICM=1.0A • Collector-Base Voltage: V(BR)CBO=100V • Marking : BCX56=BH, BCX56-10=BK, BCX56-16=BL • Epoxy meets U

Plastic-Encapsulate Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types:BCX51…BCX53(PNP)

NPN TRANSISTOR

VOLTAGE 45~80.0 Volts CURRENT 1.0 Ampers FEATURES ● High current (max. 1 A). ● Low voltage (max. 80 V).

TRANSISTOR (NPN)

FEATURES ● PNP Complements to BCX51,BCX52,BCX53 ● Low Voltage ● High Current APPLICATIONS ● Driver Stages of Audio Amplifiers

80 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

80 V, 1 A NPN medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

80 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability 3. Applications • Li

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES ® PNP Complements to BCX51,BCX52,BCX53 ® Low Voltage ® High Current APPLICATIONS ® Driver Stages of Audio Amplifiers

Plastic-Encapsulate Transistors

FEATURES PNP Complements to BCX51,BCX52,BCX53 Low Voltage High Current APPLICATIONS Driver Stages of Audio Amplifiers

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89

Features • BVCEO > 45V, 60V & 80V • Ic = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • Low Saturation Voltage VCE(sat)

NPN Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power Dissipation: PCM=0.5W (Tamb=25°C) • Collector Current: ICM=1.0A • Collector-Base Voltage: V(BR)CBO=100V • Marking : BCX56=BH, BCX56-10=BK, BCX56-16=BL • Epoxy meets U

SURFACE MOUNT NPN SILICON TRANSISTOR

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NPN Transistors

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NPN medium power transistor

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NPN Transistors

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NPN Plastic-Encapsulate Transistors

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Silicon NPN transistor in a SOT-89 Plastic Package

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80 V, 1 A NPN medium power transistors

NPN Plastic-Encapsulate Transistors

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TRANSISTOR (NPN)

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For AF driver and output stages

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NPN Transistors

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SURFACE MOUNT NPN SILICON TRANSISTOR

文件：290 Kbytes Page：2 Pages

TRANSISTOR (NPN)

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Plastic-Encapsulate Transistors

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80 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability 3. Applications • Li

NPN medium power transistors

DESCRIPTION NPN medium power transistor in a SOT89 plastic package. PNP complements: BCX51, BCX52 and BCX53. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages of audio and video amplifiers.

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX 51 … BCX 53 (PNP)

NPN Silicon AF Transistors

NPN Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX51...BCX53 (PNP)

NPN Medium Power Transistors

Features ● High current (max. 1 A). ● Low voltage (max. 80 V).

NPN Plastic-Encapsulate Transistor

FEATURES • High current • Low voltage • Medium power general purposes • Driver stages of audio amplifiers.

NPN Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power Dissipation: PCM=0.5W (Tamb=25°C) • Collector Current: ICM=1.0A • Collector-Base Voltage: V(BR)CBO=100V • Marking : BCX56=BH, BCX56-10=BK, BCX56-16=BL • Epoxy meets U

Plastic-Encapsulate Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types:BCX51…BCX53(PNP)

NPN Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power Dissipation: PCM=0.5W (Tamb=25°C) • Collector Current: ICM=1.0A • Collector-Base Voltage: V(BR)CBO=100V • Marking : BCX56=BH, BCX56-10=BK, BCX56-16=BL • Epoxy meets U

NPN Silicon AF Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types:BCX51…BCX53(PNP)

80 V, 1 A NPN medium power transistors

NPN Silicon AF Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX51…BCX53(PNP)

NPN TRANSISTOR

VOLTAGE 45~80.0 Volts CURRENT 1.0 Ampers FEATURES ● High current (max. 1 A). ● Low voltage (max. 80 V).

80 V, 1 A NPN medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

80 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability 3. Applications • Li

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES ® PNP Complements to BCX51,BCX52,BCX53 ® Low Voltage ® High Current APPLICATIONS ® Driver Stages of Audio Amplifiers

Plastic-Encapsulate Transistors

FEATURES PNP Complements to BCX51,BCX52,BCX53 Low Voltage High Current APPLICATIONS Driver Stages of Audio Amplifiers

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

80 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according t

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-89 package, which is designed for medium power surface mount applications. • High Current: 1.0 Amp • Available in 7 inch/1000 unit Tape

80 V, 1 A PNP power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified