SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

NPN medium power transistors

DESCRIPTION NPN medium power transistor in a SOT89 plastic package. PNP complements: BCX51, BCX52 and BCX53. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages of audio and video amplifiers.

NPN Silicon AF Transistors

NPN Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX51 BCX53 (PNP)

SURFACE MOUNT NPN SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications.

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89

Features • BVCEO > 45V, 60V & 80V • Ic = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • Low Saturation Voltage VCE(sat)

NPN Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power Dissipation: PCM=0.5W (Tamb=25°C) • Collector Current: ICM=1.0A • Collector-Base Voltage: V(BR)CBO=100V • Marking : BCX56=BH, BCX56-10=BK, BCX56-16=BL • Epoxy meets U

NPN Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power Dissipation: PCM=0.5W (Tamb=25°C) • Collector Current: ICM=1.0A • Collector-Base Voltage: V(BR)CBO=100V • Marking : BCX56=BH, BCX56-10=BK, BCX56-16=BL • Epoxy meets U

NPN Silicon AF Transistor

Features: • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types:BCX51/BCX52/BCX53

PNP Medium Power Transistor

Features: • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCX54/BCX55/BCX56 Applications: • Medium power general purposes • Driver stages of audio amplifiers

NPN Plastic-Encapsulate Transistor

FEATURES • High current • Low voltage • Medium power general purposes • Driver stages of audio amplifiers.

NPN Plastic-Encapsulate Transistor

FEATURES • High current • Low voltage • Medium power general purposes • Driver stages of audio amplifiers.

80 V, 1 A NPN medium power transistors

80 V, 1 A NPN medium power transistors

丝印代码：BH；NPN Silicon AF Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX51…BCX53(PNP)

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● PNP Complements to BCX51,BCX52,BCX53 ● Low Voltage ● High Current APPLICATIONS ● Driver Stages of Audio Amplifiers

NPN Medium Power Transistors

Features ● High current (max. 1 A). ● Low voltage (max. 80 V).

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX 51 … BCX 53 (PNP)

Low Voltage

TRANSISTOR (NPN) FEATURES ● PNP Complements to BCX51,BCX52,BCX53 ● Low Voltage ● High Current APPLICATIONS ● Driver Stages of Audio Amplifiers

丝印代码：BH；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES ® PNP Complements to BCX51,BCX52,BCX53 ® Low Voltage ® High Current APPLICATIONS ® Driver Stages of Audio Amplifiers

80 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

丝印代码：BH；80 V, 1 A NPN medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

丝印代码：BH；80 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability 3. Applications • Li

丝印代码：BH；Plastic-Encapsulate Transistors

FEATURES PNP Complements to BCX51,BCX52,BCX53 Low Voltage High Current APPLICATIONS Driver Stages of Audio Amplifiers

Plastic-Encapsulate Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types:BCX51…BCX53(PNP)

丝印代码：BH；NPN TRANSISTOR

VOLTAGE 45~80.0 Volts CURRENT 1.0 Ampers FEATURES ● High current (max. 1 A). ● Low voltage (max. 80 V).

NPN Silicon AF Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types:BCX51…BCX53(PNP)

TRANSISTOR (NPN)

FEATURES ● PNP Complements to BCX51,BCX52,BCX53 ● Low Voltage ● High Current APPLICATIONS ● Driver Stages of Audio Amplifiers

80 V, 1 A NPN medium power transistor

NPN medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement: BCX53. • High current\n• Three current gain selections\n• High power dissipation capability\n• Exposed heatsink for excellent thermal and electrical conductivity\n• AEC-Q101 qualified;

General Purpose Transistor

丝印代码：BH；NPN Plastic-Encapsulate Transistors

文件：1.88778 Mbytes Page：5 Pages

TRANSISTOR (NPN)

文件：127.64 Kbytes Page：1 Pages

Silicon NPN transistor in a SOT-89 Plastic Package

文件：1.44797 Mbytes Page：6 Pages

丝印代码：BH；NPN medium power transistor

文件：591.06 Kbytes Page：2 Pages

TRANSISTOR (NPN)

文件：495.92 Kbytes Page：2 Pages

Plastic-Encapsulate Transistors

文件：221.62 Kbytes Page：2 Pages

80 V, 1 A NPN medium power transistors

NPN Transistors

文件：721.42 Kbytes Page：2 Pages

NPN Plastic-Encapsulate Transistors

文件：260.63 Kbytes Page：2 Pages

NPN Transistors

文件：721.42 Kbytes Page：2 Pages

NPN Transistors

文件：721.42 Kbytes Page：2 Pages

SURFACE MOUNT NPN SILICON TRANSISTOR

文件：290 Kbytes Page：2 Pages

SURFACE MOUNT NPN SILICON TRANSISTOR

文件：290 Kbytes Page：2 Pages

For AF driver and output stages

文件：526.17 Kbytes Page：8 Pages

80 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability 3. Applications • Li

丝印代码：BK；Plastic-Encapsulate Transistors

FEATURES PNP Complements to BCX51,BCX52,BCX53 Low Voltage High Current APPLICATIONS Driver Stages of Audio Amplifiers

丝印代码：BK；80 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability 3. Applications • Li

丝印代码：BK；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES ® PNP Complements to BCX51,BCX52,BCX53 ® Low Voltage ® High Current APPLICATIONS ® Driver Stages of Audio Amplifiers

丝印代码：BK；80 V, 1 A NPN medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

Plastic-Encapsulate Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types:BCX51…BCX53(PNP)

80 V, 1 A NPN medium power transistor

NPN medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement: BCX53. • High current\n• Three current gain selections\n• High power dissipation capability\n• Exposed heatsink for excellent thermal and electrical conductivity\n• AEC-Q101 qualified;

NPN Silicon AF Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types:BCX51…BCX53(PNP)

丝印代码：BK；NPN TRANSISTOR

VOLTAGE 45~80.0 Volts CURRENT 1.0 Ampers FEATURES ● High current (max. 1 A). ● Low voltage (max. 80 V).

NPN medium power transistors

DESCRIPTION NPN medium power transistor in a SOT89 plastic package. PNP complements: BCX51, BCX52 and BCX53. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages of audio and video amplifiers.

NPN Silicon AF Transistors

NPN Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX51 BCX53 (PNP)

NPN Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power Dissipation: PCM=0.5W (Tamb=25°C) • Collector Current: ICM=1.0A • Collector-Base Voltage: V(BR)CBO=100V • Marking : BCX56=BH, BCX56-10=BK, BCX56-16=BL • Epoxy meets U

NPN Plastic-Encapsulate Transistor

FEATURES • High current • Low voltage • Medium power general purposes • Driver stages of audio amplifiers.

NPN Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power Dissipation: PCM=0.5W (Tamb=25°C) • Collector Current: ICM=1.0A • Collector-Base Voltage: V(BR)CBO=100V • Marking : BCX56=BH, BCX56-10=BK, BCX56-16=BL • Epoxy meets U

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX 51 … BCX 53 (PNP)

NPN Medium Power Transistors

Features ● High current (max. 1 A). ● Low voltage (max. 80 V).

丝印代码：BK；NPN Silicon AF Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX51…BCX53(PNP)